58 research outputs found

    Enhancement of the anomalous Hall effect and spin glass behavior in the bilayered manganite La(2-2x)Sr(1+2x)Mn2O7

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    The Hall resistivity and magnetization have been investigated in the ferromagnetic state of the bilayered manganite La(2-2x)Sr(1+2x)Mn2O7 (x=0.36). The Hall resistivity shows an increase in both the ordinary and anomalous Hall coefficients at low temperatures below 50K, a region in which experimental evidence for the spin glass state has been found in a low magnetic field of 1mT. The origin of the anomalous behavior of the Hall resistivity relevant to magnetic states may lie in the intrinsic microscopic inhomogeneity in a quasi-two-dimensional electron system.Comment: 7 pages, 4 figures, Solid State Communications (in press

    Role of Orbital Degeneracy in Double Exchange Systems

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    We investigate the role of orbital degeneracy in the double exchange (DE) model. In the JHJ_{H}\to\infty limit, an effective generalized ``Hubbard'' model incorporating orbital pseudospin degrees of freedom is derived. The model possesses an exact solution in one- and in infinite dimensions. In 1D, the metallic phase off ``half-filling'' is a Luttinger liquid with pseudospin-charge separation. Using the d=d=\infty solution for our effective model, we show how many experimental observations for the well-doped (x0.3x\simeq 0.3) three-dimensional manganites La1xSrxMnO3La_{1-x}Sr_{x}MnO_{3} can be qualitatively explained by invoking the role of orbital degeneracy in the DE model.Comment: 8 pages, 2 figures, submitted to Phys. Rev.

    Quantum Spin Pump in S=1/2 antiferromagnetic chains -Holonomy of phase operators in sine-Gordon theory-

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    In this paper, we propose the quantum spin pumping in quantum spin systems where an applied electric field (EE) and magnetic field (HH) cause a finite spin gap to its critical ground state. When these systems are subject to alternating electromangetic fields; (E,H)=(sin2πtT,cos2πtT)(E,H)=(\sin\frac{2\pi t}{T},\cos\frac{2\pi t}{T}) and travel along the {\it{loop}} Γloop\Gamma_{\rm{loop}} which encloses their critical ground state in this EE-HH phase diagram, the locking potential in the sine-Gordon model slides and changes its minimum. As a result, the phase operator acquires 2π2\pi holonomy during one cycle along Γloop\Gamma_{\rm{loop}}, which means that the quantized spin current has been transported through the bulk systems during this adiabatic process. The relevance to real systems such as Cu-benzoate and Yb4As3{\rm{Yb}}_4{\rm{As}}_3 is also discussed.Comment: 10 pages, 5 figures, to be published in J. Phys. Soc. Jpn. 74 (2005) no. 4. Typos corrected in the revised versio

    Collapse of the vortex-lattice inductance and shear modulus at the melting transition in untwinned YBa2Cu3O7\rm YBa_2Cu_3O_7

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    The complex resistivity ρ^(ω)\hat{\rho}(\omega) of the vortex lattice in an untwinned crystal of 93-K YBa2Cu3O7\rm YBa_2Cu_3O_7 has been measured at frequencies ω/2π\omega/2\pi from 100 kHz to 20 MHz in a 2-Tesla field Hc\bf H\parallel c, using a 4-probe RF transmission technique that enables continuous measurements versus ω\omega and temperature TT. As TT is increased, the inductance Ls(ω)=Imρ^(ω)/ω{\cal L}_s(\omega) ={\rm Im} \hat{\rho}(\omega)/ \omega increases steeply to a cusp at the melting temperature TmT_m, and then undergoes a steep collapse consistent with vanishing of the shear modulus c66c_{66}. We discuss in detail the separation of the vortex-lattice inductance from the `volume' inductance, and other skin-depth effects. To analyze the spectra, we consider a weakly disordered lattice with a low pin density. Close fits are obtained to ρ1(ω)\rho_1(\omega) over 2 decades in ω\omega. Values of the pinning parameter κ\kappa and shear modulus c66c_{66} obtained show that c66c_{66} collapses by over 4 decades at TmT_m, whereas κ\kappa remains finite.Comment: 11 pages, 8 figures, Phys. Rev. B, in pres

    Orbital ferromagnetism and anomalous Hall effect in antiferromagnets on distorted fcc lattice

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    The Berry phase due to the spin wavefunction gives rise to the orbital ferromagnetism and anomalous Hall effect in the non-coplanar antiferromagnetic ordered state on face centered cubic (fcc) lattice once the crystal is distorted perpendicular to (1,1,1) or (1,1,0)- plane. The relevance to the real systems γ\gamma-FeMn and NiS2_2 is also discussed.Comment: 4 pages, 3 figure

    Evidence for charge localization in the ferromagnetic phase of La_(1-x)Ca_(x)MnO_3 from High real-space-resolution x-ray diffraction

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    High real-space-resolution atomic pair distribution functions of La_(1-x)Ca_(x)MnO_3 (x=0.12, 0.25 and 0.33) have been measured using high-energy x-ray powder diffraction to study the size and shape of the MnO_6 octahedron as a function of temperature and doping. In the paramagnetic insulating phase we find evidence for three distinct bond-lengths (~ 1.88, 1.95 and 2.15A) which we ascribe to Mn^{4+}-O, Mn^{3+}-O short and Mn^{3+}-O long bonds respectively. In the ferromagnetic metallic (FM) phase, for x=0.33 and T=20K, we find a single Mn-O bond-length; however, as the metal-insulator transition is approached either by increasing T or decreasing x, intensity progressively appears around r=2.15 and in the region 1.8 - 1.9A suggesting the appearance of Mn^{3+}-O long bonds and short Mn^{4+}-O bonds. This is strong evidence that charge localized and delocalized phases coexist close to the metal-insulator transition in the FM phase.Comment: 8 pages, 8 postscript figures, submitted to Phys. Rev.

    Topological Nature of Anomalous Hall Effect in Ferromagnet

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    The anomalous Hall effect in two-dimensional ferromagnets is discussed to be the physical realization of the parity anomaly in (2+1)D, and the band crossing points behave as the topological singularity in the Brillouin zone. This appears as the sharp peaks and the sign changes of the transverse conductance σxy\sigma_{xy} as a function of the Fermi energy and/or the magnetization. The relevance to the experiments including the three dimensional systems is also discussed.Comment: LaTeX 13 pages, 3 figure

    Charge Transport in Manganites: Hopping Conduction, the Anomalous Hall Effect and Universal Scaling

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    The low-temperature Hall resistivity \rho_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects, respectively. However, no such decomposition is possible near the Curie temperature which, in these systems, is close to metal-to-insulator transition. Rather, for all of these compounds and to a good approximation, the \rho_{xy} data at various temperatures and magnetic fields collapse (up to an overall scale), on to a single function of the reduced magnetization m=M/M_{sat}, the extremum of this function lying at m~0.4. A new mechanism for the Anomalous Hall Effect in the inelastic hopping regime, which reproduces these scaling curves, is identified. This mechanism, which is an extension of Holstein's model for the Ordinary Hall effect in the hopping regime, arises from the combined effects of the double-exchange-induced quantal phase in triads of Mn ions and spin-orbit interactions. We identify processes that lead to the Anomalous Hall Effect for localized carriers and, along the way, analyze issues of quantum interference in the presence of phonon-assisted hopping. Our results suggest that, near the ferromagnet-to-paramagnet transition, it is appropriate to describe transport in manganites in terms of carrier hopping between states that are localized due to combined effect of magnetic and non-magnetic disorder. We attribute the qualitative variations in resistivity characteristics across manganite compounds to the differing strengths of their carrier self-trapping, and conclude that both disorder-induced localization and self-trapping effects are important for transport.Comment: 29 pages, 20 figure

    Large Anomalous Hall effect in a silicon-based magnetic semiconductor

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    Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology. While Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, and which we have proven to display a variety of large magnetic field effects on easily measured electrical properties.Comment: 19 pages with 5 figure

    Anomalous Hall effect in paramagnetic two dimensional systems

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    We investigate the possibility of observing the anomalous Hall effect (AHE) in two dimensional paramagnetic systems. We apply the semiclassical equations of motion to carriers in the conduction and valence bands of wurtzite and zincblende quantum wells in the exchange field generated by magnetic impurities and we calculate the anomalous Hall conductivity based on the Berry phase corrections to the carrier velocity. We show that under certain circumstances this conductivity approaches one half of the conductance quantum. We consider the effect of an external magnetic field and show that for a small enough field the theory is unaltered.Comment: 9 pages, 10 figures, 2 table
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