Inducing ferromagnetism and Kondo effect in platinum by paramagnetic ionic gating

Electrically controllable magnetism, which requires the field-effect manipulation of both charge and spin degrees of freedom, has attracted growing interests since the emergence of spintronics. In this work, we report the reversible electrical switching of ferromagnetic (FM) states in platinum (Pt) thin films by introducing paramagnetic ionic liquid (PIL) as the gating media. The paramagnetic ionic gating controls the movement of ions with magnetic moments, which induces itinerant ferromagnetism on the surface of Pt films with large coercivity and perpendicular anisotropy mimicking the ideal two-dimensional Ising-type FM state. The electrical transport of the induced FM state shows Kondo effect at low temperature suggesting spatially separated coexistence of Kondo scattering beneath the FM interface. The tunable FM state indicates that paramagnetic ionic gating could serve as a versatile method to induce rich transport phenomena combining field effect and magnetism at PIL-gated interfaces.Comment: 17 pages, 4 figure

Effect of band filling in the Kondo lattice: A mean-field approach

The usual Kondo-lattice, including an antiferromagnetic exchange interaction between nearest-neighboring localized spins, is treated here in a mean-field scheme that introduces two mean-field parameters: one associated with the local Kondo effect, and the other related to the magnetic correlations between localized spins. Phases with short-range magnetic correlations or coexistence between those and the Kondo effect are obtained. By varying the number of electrons in the conduction band, we notice that the Kondo effect tends to be suppressed away from half filling, while magnetic correlations can survive if the Heisenberg coupling is strong enough. An enhanced linear coefficient of the specific heat is obtained at low temperatures in the metallic state.Comment: 7 pages, ReVTeX two-column, 7 figure

Mechanism of thermally activated c-axis dissipation in layered High-Tc_c superconductors at high fields

We propose a simple model which explains experimental behavior of $c$-axis resistivity in layered High-T$_c$ superconductors at high fields in a limited temperature range. It is generally accepted that the in-plane dissipation at low temperatures is caused by small concentration of mobile pancake vortices whose diffusive motion is thermally activated. We demonstrate that in such situation a finite conductivity appears also in $c$-direction due to the phase slips between the planes caused by the mobile pancakes. The model gives universal relation between the components of conductivity which is in good agreement with experimental data.Comment: RevTeX, 4 pages, 2 Postscript figure

Magnetic field dependence of vortex activation energy: a comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors

The dissipative mechanism at low current density is compared in three different classes of superconductors. This is achieved by measurement of resistance as a function of temperature and magnetic field in clean polycrystalline samples of NbSe2, MgB2 and Bi2Sr2Ca2Cu3O10 superconductors. Thermally activated flux flow behavior is clearly identified in bulk MgB2. While the activation energy at low fields for MgB2 is comparable to Bi2Sr2Ca2Cu3O10, its field dependence follows a parabolic behavior unlike a power law dependence seen in Bi2Sr2Ca2Cu3O10. We analyze our results based on the Kramer's scaling for grain boundary pinning in MgB2and NbSe2

Experimental evidence for an intermediate phase in the multiferroic YMnO3

We have studied YMnO$_{3}$ by high-temperature synchrotron X-ray powder diffraction, and have carried out differential thermal analysis and dilatometry on a single crystal sample. These experiments show two phase transitions at about 1100K and 1350K, respectively. This demonstrates the existence of an intermediate phase between the room temperature ferroelectric and the high temperature centrosymmetric phase. This study identifies for the first time the different high-temperature phase transitions in YMnO$_{3}$.Comment: 10 pages 5 figures. New version, Additional data, Journal of Physics: Condensed Matter, in Pres

Single domain transport measurements of C60 films

Thin films of potassium doped C60, an organic semiconductor, have been grown on silicon. The films were grown in ultra-high vacuum by thermal evaporation of C60 onto oxide-terminated silicon as well as reconstructed Si(111). The substrate termination had a drastic influence on the C60 growth mode which is directly reflected in the electrical properties of the films. Measured on the single domain length scale, these films revealed resistivities comparable to bulk single crystals. In situ electrical transport properties were correlated to the morphology of the film determined by scanning tunneling microscopy. The observed excess conductivity above the superconducting transition can be attributed to two-dimensional fluctuations.Comment: 4 pages, 4 figure

Magnetic Exciton Mediated Superconductivity in the Hidden-Order Phase of URu2Si2

We propose the magnetic exciton mediated superconductivity occurring in the enigmatic hidden-order phase of URu2Si2. The characteristic of the massive collective excitation observed only in the hidden-order phase is well reproduced by the antiferro hexadecapole ordering model as the trace of the dispersive crystalline-electric-field excitation. The disappearance of the superconductivity in the high-pressure antiferro magnetic phase can naturally be understood by the sudden suppression of the magnetic-exciton intensity. The analysis of the momentum dependence of the magnetic-exciton mode leads to the exotic chiral d-wave singlet pairing in the Eg symmetry. The Ising-like magnetic-field response of the mode yields the strong anisotropy observed in the upper critical field even for the rather isotropic 3-dimensional Fermi surfaces of this compound.Comment: 5 pages, 4 figure

Induced-Moment Weak Antiferromagnetism and Orbital Order on the Itinerant-Localized Duality Model with Nested Fermi Surface: A Possible Origin of Exotic Magnetism in URu2{}_{2}Si2_{2}

The weak antiferromagnetism of URu${}_{2}$Si${}_{2}$ is discussed on the basis of a duality model which takes into account salient features of both itinerant fermions and "localized" component of spin degrees of freedom. The problem is analyzed in the framework of induced-moment mechanism by taking a singlet-singlet crystal field scheme together with the nesting property of partial Fermi surface of itinerant fermions . It is shown that the extremely small ordered moment $m$ of ${\cal O}$($10^{-2}$$\times$$\mu_{B}$) can be compatible with the large specific-heat jump at the transition temperature $T_{N}$. Analysis performed in the presence of external magnetic field shows that the field dependence of $m$ in the limit T\to 0 and T_{N}$ do not scale except very near the critical field B which is consistent with a recent observation by Mentink. It is also shown that the antiferromagnetic magnetic order gives rise to a tiny amount of antiferromagnetic orbital order of f-electrons.Comment: 14 pages, 2 figure PS file, accepted J. Phys. Soc. Jp

What Does The Korringa Ratio Measure?

We present an analysis of the Korringa ratio in a dirty metal, emphasizing the case where a Stoner enhancement of the uniform susceptibilty is present. We find that the relaxation rates are significantly enhanced by disorder, and that the inverse problem of determining the bare density of states from a study of the change of the Knight shift and relaxation rates with some parameter, such as pressure, has rather constrained solutions, with the disorder playing an important role. Some preliminary applications to the case of chemical substitution in the Rb$_{3-x}$K$_x$C$_{60}$ family of superconductors is presented and some other relevant systems are mentioned.Comment: 849, Piscataway, New Jersey 08855 24 June 199

Magnetoelectric coupling in the cubic ferrimagnet Cu2OSeO3

We have investigated the magnetoelectric coupling in the lone pair containing piezoelectric ferrimagnet Cu2OSeO3. Significant magnetocapacitance develops in the magnetically ordered state (TC = 60 K). We find critical behavior near TC and a divergence near the metamagnetic transition at 500 Oe. High-resolution X-ray and neutron powder diffraction measurements show that Cu2OSeO3 is metrically cubic down to 10 K but that the ferrimagnetic ordering reduces the symmetry to rhombohedral R3. The metric cubic lattice dimensions exclude a magnetoelectric coupling mechanism involving spontaneous lattice strain, and this is unique among magnetoelectric and multiferroic materials.Comment: accepted for publication in PR