814 research outputs found

    Mapping Itinerant Electrons around Kondo Impurities

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    We investigate single Fe and Co atoms buried below a Cu(100) surface using low temperature scanning tunneling spectroscopy. By mapping the local density of states of the itinerant electrons at the surface, the Kondo resonance near the Fermi energy is analyzed. Probing bulk impurities in this well-defined scattering geometry allows separating the physics of the Kondo system and the measuring process. The line shape of the Kondo signature shows an oscillatory behavior as a function of depth of the impurity as well as a function of lateral distance. The oscillation period along the different directions reveals that the spectral function of the itinerant electrons is anisotropic.Comment: 5 pages, 4 figures, accepted by Physical Review Letter

    Theory of Optical Orientation in n-Type Semiconductors

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    Time resolved measurements of magnetization in n-GaAs have revealed a rich array of spin decoherence processes, and have shown that fairly long lifetimes (\sim 100 ns) can be achieved under certain circumstances. In time-resolved Faraday rotation and time-resolved Kerr rotation the evolution of the magnetization can be followed as a function of temperature, applied field, doping level and excitation level. We present a theory for the spin relaxation in n-GaAs based on a set of rate equations for two interacting thermalized subsystems of spins: localized states on donor sites and itinerant states in the conduction band. The conduction band spins relax by scattering from defects or phonons through the D'yakonov-Perel' mechanism, while the localized spins relax by interacting with phonons (when in an applied field) or through the Dzyaloshinskii-Moriya interaction. In this model, numerous features of the data, including puzzling temperature and doping dependences of the relaxation time, find an explanation.Comment: 4 pages, 2 figures; revised version has a more complete discussion of the Elliott-Yafet and spin-phonon decay mechanism

    On the Connection of Anisotropic Conductivity to Tip Induced Space Charge Layers in Scanning Tunneling Spectroscopy of p-doped GaAs

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    The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias voltages. Spatially resolved I(V)-spectroscopy is performed to identify their energetic origin and behavior. A crucial parameter - the STM tip's work function - is determined experimentally. The voltage dependent potential configuration and band bending situation is derived. Ways to validate the calculations with the experiment are discussed. Differential conductivity maps reveal that the triangular contrasts are only observed with a depletion layer present under the STM tip. The tunnel process leading to the anisotropic contrasts calls for electrons to tunnel through vacuum gap and a finite region in the semiconductor.Comment: 11 pages, 8 figure

    Intracerebral Implantation of Hydrogel-Coupled Adhesion Peptides: Tissue Reaction

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    Arg-Gly-Asp peptides (RGD) were synthesized and chemically coupled to the bulk of N-(2-hydroxypropyl) methacrylamide-based polymer hydrogels. Fourier Transform Infrared Spectroscopy (FFIR) and amino acid analysis confirmed the peptide coupling to the polymer. Activated and control (unmodified) polymer matrices were stereotaxically implanted in the striata of rat brains, and two months later the brains were processed for immunohistochemistry using antibodies for glial acidic fibrillary protein (GFAP), laminin and neurofilaments. RGD-containing polymer matrices promoted stronger adhesion to the host tissue than the unmodified polymer matrices. In addition, the RGD-grafted polymer implants promoted and supported the growth and spread of GFAP-positive glial tissue onto and into the hydrogels. Neurofilament-positive fibers were also seen running along the surface of the polymer and, in some instances, penetrating the matrix. These findings are discussed in the context of using bioactive polymers as a new approach for promoting tissue repair and axonal regeneration of damaged structures of the central nervous system

    Local Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study

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    We investigate low temperature grown, abrupt, epitaxial, nonintermixed, defect-free n-type and p-type Fe/GaAs(110) interfaces by cross-sectional scanning tunneling microscopy and spectroscopy with atomic resolution. The probed local density of states shows that a model of the ideal metal-semiconductor interface requires a combination of metal-induced gap states and bond polarization at the interface which is nicely corroborated by density functional calculations. A three-dimensional finite element model of the space charge region yields a precise value for the Schottky barrier height

    Electronic disorder of P- and B-doped Si at the metal-insulator transition investigated by scanning tunnelling microscopy and electronic transport

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    The (111)-2 × 1 surface of in situ cleaved heavily P- or B-doped Si is investigated by scanning tunnelling microscopy and spectroscopy at room temperature and at low temperature. P atoms have been identified on different sites of the Si(111)-2 × 1 surface by their characteristic voltage-dependent contrast for positive as well as negative buckling of the π-bonded chains. The distributions of dopants per surface area and of nearest-neighbour distances are found to be in agreement with a random arrangement of dopants in Si up to doping levels well above the metal–insulator transition. In addition, P atoms have been identified by their depth-dependent contrast down to the third layer beneath the surface with a volume density in agreement with the bulk doping density. The random electronic disorder supports the view of an Anderson transition driven by disorder close to the critical concentration or critical uniaxial stress
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