29,749 research outputs found

    Orthosymplectic Jordan superalgebras and the Wedderburn principal theorem (WPT)

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    An analogue of the Wedderbur principal theorem (WPT) is considered for finite dimensional Jordan superalgebras A with solvable radical N, such that N^2=0 and A/N is isomorphic to Josp_n|2m(F), where F is an algebraicallly closed field of characteristic zero. Let's we prove that the WPT is valid under some restrictions over the irreducible Josp_n|2m(F)-bimodules contained in N, and it is shown with counter-examples that these restrictions can not be weakened.Comment: 13 page

    Room temperature ferromagnetic-like behavior in Mn-implanted and post-annealed InAs layers deposited by Molecular Beam Epitaxy

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    We report on the magnetic and structural properties of Ar and Mn implanted InAs epitaxial films grown on GaAs (100) by Molecular Beam Epitaxy (MBE) and the effect of Rapid Thermal Annealing (RTA) for 30 seconds at 750C. Channeling Particle Induced X- ray Emission (PIXE) experiments reveal that after Mn implantation almost all Mn atoms are subsbtitutional in the In-site of the InAs lattice, like in a diluted magnetic semiconductor (DMS). All of these samples show diamagnetic behavior. But, after RTA treatment the Mn-InAs films exhibit room-temperature magnetism. According to PIXE measurements the Mn atoms are no longer substitutional. When the same set of experiments were performed with As as implantation ion all of the layers present diamagnetism without exception. This indicates that the appearance of room-temperature ferromagnetic-like behavior in the Mn-InAs-RTA layer is not related to lattice disorder produce during implantation, but to a Mn reaction produced after a short thermal treatment. X-ray diffraction patterns (XRD) and Rutherford Back Scattering (RBS) measurements evidence the segregation of an oxygen deficient-MnO2 phase (nominally MnO1.94) in the Mn-InAs-RTA epitaxial layers which might be on the origin of room temperature ferromagnetic-like response observed.Comment: 16 pages, 5 figures. Acepted in J. Appl. Phy

    Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors

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    In this work, we compare the photodetector performance of single defect-free undoped and n-in GaN nanowires (NWs). In vacuum, undoped NWs present a responsivity increment, nonlinearities and persistent photoconductivity effects (~ 100 s). Their unpinned Fermi level at the m-plane NW sidewalls enhances the surface states role in the photodetection dynamics. Air adsorbed oxygen accelerates the carrier dynamics at the price of reducing the photoresponse. In contrast, in n-i-n NWs, the Fermi level pinning at the contact regions limits the photoinduced sweep of the surface band bending, and hence reduces the environment sensitivity and prevents persistent effects even in vacuum
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