36,759 research outputs found

    Multi-physics simulation of friction stir welding process

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    Purpose: The Friction Stir Welding (FSW) process comprises of several highly coupled (and non-linear) physical phenomena: large plastic deformation, material flow transportation, mechanical stirring of the tool, tool-workpiece surface interaction, dynamic structural evolution, heat generation from friction and plastic deformation, etc. In this paper, an advanced Finite Element (FE) model encapsulating this complex behavior is presented and various aspects associated with the FE model such as contact modeling, material model and meshing techniques are discussed in detail. Methodology: The numerical model is continuum solid mechanics-based, fully thermomechanically coupled and has successfully simulated the friction stir welding process including plunging, dwelling and welding stages. Findings: The development of several field variables are quantified by the model: temperature, stress, strain, etc. Material movement is visualized by defining tracer particles at the locations of interest. The numerically computed material flow patterns are in very good agreement with the general findings from experiments. Value: The model is, to the best of the authors’ knowledge, the most advanced simulation of FSW published in the literature

    Parametric finite-element studies on the effect of tool shape in friction stir welding

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    The success of the Friction Stir Welding (FSW) process, and the weld quality produced, depends significantly on the design of the welding tool. In this paper the effect of variation in various tool geometry parameters on FSW process outcomes, during the plunge stage, were investigated. Specifically the tool shoulder surface angle and the ratio of the shoulder radius to pin radius on tool reaction force, tool torque, heat generation, temperature distribution and size of the weld zone were investigated. The studies were carried out numerically using the finite element method. The welding process used AA2024 aluminium alloy plates with a thickness of 3 mm. It was found that, in plunge stage, the larger the pin radius the higher force and torque the tool experiences and the greater heat generated. It is also found that the shoulder angle has very little effect on energy dissipation as well as little effect on temperature distribution

    Charge shelving and bias spectroscopy for the readout of a charge-qubit on the basis of superposition states

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    Charge-based qubits have been proposed as fundamental elements for quantum computers. One commonly proposed readout device is the single-electron transistor (SET). SETs can distinguish between localized charge states, but lack the sensitivity to directly distinguish superposition states, which have greatly enhanced coherence times compared with position states. We propose introducing a third dot, and exploiting energy dependent tunnelling from the qubit into this dot (bias spectroscopy) for pseudo-spin to charge conversion and superposition basis readout. We introduce an adiabatic fast passage-style charge pumping technique which enables efficient and robust readout via charge shelving, avoiding problems due to finite SET measurement time.Comment: 4 pages, 3 figures, note slightly changed title, replaced with journal versio

    Elastic stress concentration at radial crossholes in pressurised thick cylinders

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    Results of a parametric finite element analysis investigation of stress concentration at radial crossholes in pressurized cylinders are presented in numerical and graphical form. The analysis shows that the location of maximum stress does not generally occur at the junction between the bores, as is commonly supposed, but at some small distance up the crosshole from the junction. Maximum stress concentration factors (SCFs) are defined on the basis of the maximum principal stress, von Mises equivalent stress, and stress intensity. Three-dimensional plots of the SCF against the cylinder radius ratio b/a and the crosshole-to-main-bore-radius ratio c/a are presented. The SCFs were found to vary across the range of geometries considered with local minima identified within the parameter range in most cases. The results therefore allow designers to select optimum b/a and c/a ratios to minimize stress concentration in real problems

    Development of high speed power thyristor: The gate assisted turn-off thyristor

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    A high speed power switch with unique turn-off capability was developed. This gate-assisted turn-off thyristor was rated at 609 V and 50 A with turn-off times of 2 microsec. Twenty-two units were delivered for evaluation in a series inverter circuit. In addition, test circuits designed to relate to the series inverter application were built and demonstrated

    A critical appraisal of WinEcon and its use in a first‐year undergraduate Economics programme

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    This is an extended review of WinEcon, a CAL package for introductory economics. Our comments are based on a survey of staff and students involved in the first large‐scale (n = 300+) attempt to integrate WinEcon into a teaching and assessment programme

    The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

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    Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid thermal annealing at 1000oC for 5 seconds, each implanted P ion contributes an additional 0.08 plus/minus 0.03 electrically active traps, whilst no increase in the number of traps is seen for comparable silicon implants. This result shows that the additional traps are ionized P donors, and not damage due to the implantation process. We also find, using the room temperature threshold voltage shift, that the electrical activation of donors at an implant density of 2x10^12 cm^-2 is ~100%.Comment: 11 pages, 10 figure
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