Extremal transmission at the Dirac point of a photonic band structure

We calculate the effect of a Dirac point (a conical singularity in the band structure) on the transmission of monochromatic radiation through a photonic crystal. The transmission as a function of frequency has an extremum at the Dirac point, depending on the transparencies of the interfaces with free space. The extremal transmission $T_{0}=\Gamma_{0} W/L$ is inversely proportional to the longitudinal dimension $L$ of the crystal (for $L$ larger than the lattice constant and smaller than the transverse dimension $W$). The interface transparencies affect the proportionality constant $\Gamma_{0}$, and they determine whether the extremum is a minimum or a maximum, but they do not affect the ``pseudo-diffusive'' 1/L dependence of $T_{0}$.Comment: 6 pages, 4 figures. Fig. 1 revised, Fig. 4 adde

Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the six valleys and anisotropy in the resistance. We hypothesize the misorientation of Si surface breaks the valley states into three unequally spaced pairs, but the observation of odd filling factors, is difficult to reconcile with non-interacting electron theory.Comment: 4 pages, 4 figures, to appear in Physical Review Letter

Investigation of the calibration of microphones for sonic boom measurement

Precision calibration techniques for microphones used in sonic boom measurement

Charge transport through weakly open one dimensional quantum wires

We consider resonant transmission through a finite-length quantum wire connected to leads via finite transparency junctions. The coherent electron transport is strongly modified by the Coulomb interaction. The low-temperature current-voltage ($IV$) curves show step-like dependence on the bias voltage determined by the distance between the quantum levels inside the conductor, the pattern being dependent on the ratio between the charging energy and level spacing. If the system is tuned close to the resonance condition by the gate voltage, the low-voltage $IV$ curve is Ohmic. At large Coulomb energy and low temperatures, the conductance is temperature-independent for any relationship between temperature, level spacing, and coupling between the wire and the leads

Thermoelectric effects in Kondo correlated quantum dots

In this Letter we study thermoelectric effects in ultra small quantum dots. We study the behaviour of the thermopower, Peltier coefficient and thermal conductance both in the sequencial tunneling regime and in the regime where Kondo correlations develope. Both cases of linear response and non-equilibrium induced by strong temperature gradients are considered. The thermopower is a very sensitive tool to detect Kondo correlations. It changes sign both as a function of temperature and temperature gradient. We also discuss violations of the Wiedemann-Franz law.Comment: 7 pages; 5 figure

Overexpression of mitochondrial sirtuins alters glycolysis and mitochondrial function in HEK293 cells

SIRT3, SIRT4, and SIRT5 are mitochondrial deacylases that impact multiple facets of energy metabolism and mitochondrial function. SIRT3 activates several mitochondrial enzymes, SIRT4 represses its targets, and SIRT5 has been shown to both activate and repress mitochondrial enzymes. To gain insight into the relative effects of the mitochondrial sirtuins in governing mitochondrial energy metabolism, SIRT3, SIRT4, and SIRT5 overexpressing HEK293 cells were directly compared. When grown under standard cell culture conditions (25 mM glucose) all three sirtuins induced increases in mitochondrial respiration, glycolysis, and glucose oxidation, but with no change in growth rate or in steady-state ATP concentration. Increased proton leak, as evidenced by oxygen consumption in the presence of oligomycin, appeared to explain much of the increase in basal oxygen utilization. Growth in 5 mM glucose normalized the elevations in basal oxygen consumption, proton leak, and glycolysis in all sirtuin over-expressing cells. While the above effects were common to all three mitochondrial sirtuins, some differences between the SIRT3, SIRT4, and SIRT5 expressing cells were noted. Only SIRT3 overexpression affected fatty acid metabolism, and only SIRT4 overexpression altered superoxide levels and mitochondrial membrane potential. We conclude that all three mitochondrial sirtuins can promote increased mitochondrial respiration and cellular metabolism. SIRT3, SIRT4, and SIRT5 appear to respond to excess glucose by inducing a coordinated increase of glycolysis and respiration, with the excess energy dissipated via proton leak. © 2014 Barbi de Moura et al

Quantum point contact due to Fermi-level pinning and doping profiles in semiconductor nanocolumns

We show that nanoscale doping profiles inside a nanocolumn in combination with Fermi-level pinning at the surface give rise to the formation of a saddle-point in the potential profile. Consequently, the lateral confinement inside the channel varies along the transport direction, yielding an embedded quantum point contact. An analytical estimation of the quantization energies will be given

Cotunneling-mediated transport through excited states in the Coulomb blockade regime

We present finite bias transport measurements on a few-electron quantum dot. In the Coulomb blockade regime, strong signatures of inelastic cotunneling occur which can directly be assigned to excited states observed in the non-blockaded regime. In addition, we observe structures related to sequential tunneling through the dot, occuring after it has been excited by an inelastic cotunneling process. We explain our findings using transport calculations within the real-time Green's function approach, including diagrams up to fourth order in the tunneling matrix elements.Comment: 4 pages, 3 figure

Ballistic Composite Fermions in Semiconductor Nanostructures

We report the results of two fundamental transport measurements at a Landau level filling factor $\nu$ of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B~=~0 and $\nu~=~ 1/2$. The experimental results demonstrate semi-classical charge transport by composite fermions, which consist of electrons bound to an even number of flux quanta.Comment: 9 pages TeX 3.1415 C version 6.1, 3 PostScript figure