Superconducting transport through a vibrating molecule

Nonequilibrium electronic transport through a molecular level weakly coupled to a single coherent phonon/vibration mode has been studied for superconducting leads. The Keldysh Green function formalism is used to compute the current for the entire bias voltage range. In the subgap regime, Multiple Andreev Reflection (MAR) processes accompanied by phonon emission cause rich structure near the onset of MAR channels, including an even-odd parity effect that can be interpreted in terms of an inelastic MAR ladder picture. Thereby we establish a connection between the Keldysh formalism and the Landauer scattering approach for inelastic MAR.Comment: 5 pages, 5 figures, version contains now more details, accepted by PR

Field-Effect Transistors on Tetracene Single Crystals

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The non-monotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality.Comment: Accepted by Appl. Phys. Lett, tentatively scheduled for publication in the November 24, 2003 issu

Transport and Noise Characteristics of Submicron High-Temperature Superconductor Grain-Boundary Junctions

We have investigated the transport and noise properties of submicron YBCO bicrystal grain-boundary junctions prepared using electron beam lithography. The junctions show an increased conductance for low voltages reminiscent of Josephson junctions having a barrier with high transmissivity. The voltage noise spectra are dominated by a few Lorentzian components. At low temperatures clear two-level random telegraph switching (RTS) signals are observable in the voltage vs time traces. We have investigated the temperature and voltage dependence of individual fluctuators both from statistical analysis of voltage vs time traces and from fits to noise spectra. A transition from tunneling to thermally activated behavior of individual fluctuators was clearly observed. The experimental results support the model of charge carrier traps in the barrier region.Comment: 4 pages, 4 figures, to be published in Appl. Phys. Let

Critical voltage of a mesoscopic superconductor

We study the role of the quasiparticle distribution function f on the properties of a superconducting nanowire. We employ a numerical calculation based upon the Usadel equation. Going beyond linear response, we find a non-thermal distribution for f caused by an applied bias voltage. We demonstrate that the even part of f (the energy mode f_L) drives a first order transition from the superconducting state to the normal state irrespective of the current

Coherent back-scattering near the two-dimensional metal-insulator transition

We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching to the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field.Comment: to appear in PR

Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable operation requires the leakage current to be smaller than $10^{-9} \ \mathrm{A/cm}^2$. Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications.Comment: submitted to Appl. Phys. Let

Enhancement of quasiparticle recombination in Ta and Al superconductors by implantation of magnetic and nonmagnetic atoms

The quasiparticle recombination time in superconducting films, consisting of the standard electron-phonon interaction and a yet to be identified low temperature process, is studied for different densities of magnetic and nonmagnetic atoms. For both Ta and Al, implanted with Mn, Ta and Al, we observe an increase of the recombination rate. We conclude that the enhancement of recombination is not due to the magnetic moment, but arises from an enhancement of disorder.Comment: 4 pages, 4 figure

Quasiparticle relaxation in optically excited high-Q superconducting resonators

The quasiparticle relaxation time in superconducting films has been measured as a function of temperature using the response of the complex conductivity to photon flux. For tantalum and aluminium, chosen for their difference in electron-phonon coupling strength, we find that at high temperatures the relaxation time increases with decreasing temperature, as expected for electron-phonon interaction. At low temperatures we find in both superconducting materials a saturation of the relaxation time, suggesting the presence of a second relaxation channel not due to electron-phonon interaction.Comment: 4 pages, 3 figure