Nanostructure phase and interface engineering via controlled Au self-assembly on GaAs(001) surface

We have investigated the temperature-dependent morphology and composition changes occurring during a controlled self-assembling of thin Au film on the Gallium arsenide (001) surface utilizing electron microscopy at nano and atomic levels. It has been found that the deposition of 2 ML of Au at a substrate temperature lower than 798 K leads to the formation of pure Au nanoislands. For the deposition at a substrate temperature of about 798 K the nanostructures of the stoichiometric AuGa phase were/had been grown. Gold deposition at higher substrate temperatures results in the formation of octagonal nanostructures composed of an AuGa2 alloy. We have proved that the temperature-controlled efficiency of Au-induced etching-like of the GaAs substrate follows in a layer-by-layer manner leading to the enrichment of the substrate surface in gallium. The excess Ga together with Au forms liquid droplets which, while cooling the sample to room temperature, crystallize therein developing crystalline nanostructures of atomically-sharp interfaces with the substrate. The minimal stable cluster of 3 atoms and the activation energy for the surface diffusion Ed=0.816+-0.038eV was determined. We show that by changing the temperature of the self-assembling process one can control the phase, interface and the size of the nanostructures formed

High-precision measurement of the half-life of 62^{62}Ga

The beta-decay half-life of 62Ga has been studied with high precision using on-line mass separated samples. The decay of 62Ga which is dominated by a 0+ to 0+ transition to the ground state of 62Zn yields a half-life of T_{1/2} = 116.19(4) ms. This result is more precise than any previous measurement by about a factor of four or more. The present value is in agreement with older literature values, but slightly disagrees with a recent measurement. We determine an error weighted average value of all experimental half-lives of 116.18(4) ms.Comment: 9 pages, 5 figures, accepted for publication in PR

Decay of proton-rich nuclei between 39Ti and 49Ni

Decay studies of very neutron-deficient nuclei ranging from 39Ti to 49Ni have been performed during a projectile fragmentation experiment at the GANIL/LISE3 separator. For all nuclei studied in this work, 39,40Ti, 42,43Cr, 46Mn, 45,46,47Fe and 49Ni, half-lives and decay spectra have been measured. In a few cases, gamma coincidence measurements helped to successfully identify the initial and final states of transitions. In these cases, partial decay scheme are proposed. For the most exotic isotopes, 39Ti, 42Cr, 45Fe and 49Ni, which are candidates for two-proton radioactivity from the ground state, no clear evidence of this process is seen in our spectra and we conclude rather on a delayed particle decay.Comment: 12 pages, 15 figures, submitted for publication in Eur. Phys. J.

First observation of 55,56Zn

In an experiment at the SISSI/LISE3 facility of GANIL, the most proton-rich zinc isotopes 55,56Zn have been observed for the first time. The experiment was performed using a high-intensity 58Ni beam at 74.5 MeV/nucleon impinging on a nickel target. The identification of 55,56Zn opens the way to 54Zn, a good candidate for two-proton radioactivity according to theoretical predictions.Comment: 2 pages, 1 figure, accepted for publication in Eur. Phys. J.

Into the Origin of Electrical Conductivity for the Metal-Semiconductor Junction at the Atomic Level

The metal-semiconductor (M-S) junction based devices are commonly used in all sorts of electronic devices. Their electrical properties are defined by the metallic phase properties with a respect to the semiconductor used. Here we make an in-depth survey on the origin of the M-S junction at the atomic scale by studying the properties of the AuIn2 nanoelectrodes formed on the InP(001) surface by the in situ electrical measurements in combination with a detailed investigation of atomically resolved structure supported by the first-principle calculations of its local electrical properties. We have found that a different crystallographic orientation of the same metallic phase with a respect to the semiconductor structure influences strongly the M-S junction rectifying properties by subtle change of the metal Fermi level and influencing the band edge moving at the interface. This ultimately changes conductivity regime between Ohmic and Schottky type. The effect of crystallographic orientation has to be taken into account in the engineering of the M-S junction-based electronic devices

The rp-process and new measurements of beta-delayed proton decay of light Ag and Cd isotopes

Recent network calculations suggest that a high temperature rp-process could explain the abundances of light Mo and Ru isotopes, which have long challenged models of p-process nuclide production. Important ingredients to network calculations involving unstable nuclei near and at the proton drip line are $\beta$-halflives and decay modes, i.e., whether or not $\beta$-delayed proton decay takes place. Of particular importance to these network calculation are the proton-rich isotopes $^{96}$Ag, $^{98}$Ag, $^{96}$Cd and $^{98}$Cd. We report on recent measurements of $\beta$-delayed proton branching ratios for $^{96}$Ag, $^{98}$Ag, and $^{98}$Cd at the on-line mass separator at GSI.Comment: 4 pages, uses espcrc1.sty. Proceedings of the 4th International Symposium Nuclei in the Cosmos, June 1996, Notre Dame/IN, USA, Ed. M. Wiescher, to be published in Nucl.Phys.A. Also available at ftp://ftp.physics.ohio-state.edu/pub/nucex/nic96-gs

Chitin and carbon nanotube composites as biocompatible scaffolds for neuron growth

Preparation of biocompatible and electrically-conducting chitin nanotube composite scaffold for potential use in implantable electrode for stimulation and repair of neurons.</p

Proton Drip-Line Calculations and the Rp-process

One-proton and two-proton separation energies are calculated for proton-rich nuclei in the region $A=41-75$. The method is based on Skyrme Hartree-Fock calculations of Coulomb displacement energies of mirror nuclei in combination with the experimental masses of the neutron-rich nuclei. The implications for the proton drip line and the astrophysical rp-process are discussed. This is done within the framework of a detailed analysis of the sensitivity of rp process calculations in type I X-ray burst models on nuclear masses. We find that the remaining mass uncertainties, in particular for some nuclei with $N=Z$, still lead to large uncertainties in calculations of X-ray burst light curves. Further experimental or theoretical improvements of nuclear mass data are necessary before observed X-ray burst light curves can be used to obtain quantitative constraints on ignition conditions and neutron star properties. We identify a list of nuclei for which improved mass data would be most important.Comment: 20 pages, 9 figures, 2 table