Механізм управління інвестиційною діяльністю на підприємствах харчової промисловості

Статья посвящена исследованию экономического механизма управления инвестиционной деятельностью на предприятиях пищевой промышленности. Проанализировано современное состояние инвестиционного обеспечения отрасли, выделены основные составляющие экономического механизма управления инвестиционной деятельностью, в частности, рычаги государственного регулирования, методологическая, законодательная и информационная базы управления инвестиционной деятельностью. Выделены основные проблемы функционирования эффективного механизма управления и предложены пути их решения.Стаття присвячена дослідженню економічного механізму управління інвестиційною діяльністю на підприємствах харчової промисловості. Проаналізовано сучасний стан інвестиційного забезпечення галузі, виділено основні складові економічного механізму управління інвестиційною діяльністю, зокрема, важелі державного регулювання, методологічна, законодавча і інформаційна бази. Виділено проблеми функціонування ефективного механізму управління і запропоновано шляхи їх подолання.This article is dedicate to researching of economic mechanism of investment activities management on food industry enterprises. Analyzed nowadays conditions of providing of the brunch with investments, marked out the main components of economic mechanism of investment activities management, particularly, leverage of state regulation, methodological, legislative and information bases of investment activities management. Marked out the main problems of functioning effective management mechanism and proposed the ways of their salvations

Charge transport and trapping in Cs-doped poly(dialkoxy-p-phenylene vinylene) light-emitting diodes

Al/Cs/MDMO-PPV/ITO (where MDMO-PPV stands for poly[2-methoxy-5-(3'-7'-dimethyloctyloxy)-1,4phenylene vinylene] and ITO is indium tin oxide) light-emitting diode (LED) structures, made by physical vapor deposition of Cs on the emissive polymer layer, have been characterized by electroluminescence, current-voltage, and admittance spectroscopy. Deposition of Cs is found to improve the balance between electron and hole currents, enhancing the external electroluminescence efficiency from 0.01 cd A-1 for the bare Al cathode to a maximum of 1.3 cd A-1 for a Cs coverage of only 1.5×1014 atoms/cm2. By combining I-V and admittance spectra with model calculations, in which Cs diffusion profiles are explicitly taken into account, this effect could be attributed to a potential drop at the cathode interface due to a Cs-induced electron donor level 0.61 eV below the lowest unoccupied molecular orbital. In addition, the admittance spectra in the hole-dominated regime are shown to result from space-charge-limited conduction combined with charge relaxation in trap levels. This description allows us to directly determine the carrier mobility, even in the presence of traps. In contrast to recent literature, we demonstrate that there is no need to include dispersive transport in the description of the carrier mobility to explain the excess capacitance that is typically observed in admittance spectra of p-conjugated materials

Interface formation in K doped poly(dialkoxy-p-phenylene vinylene) light-emitting diodes

Manufacturing of Al/K/OC1C10 poly(p-phenylene vinylene)/indium–tin–oxide light emitting diode structures by physical vapor deposition of K onto the emissive polymer layer has been characterized by electroluminescence and ion spectroscopy. Varying the deposited K areal density from 3.9×1012 to 1.2×1014 atoms cm−2 the external efficiency rises from 0.01 to 1.2 Cd A−1. Spectra obtained by ion scattering analysis demonstrate the overall absence of K at the polymer outermost surface layer, and diffusion up to a depth of 200 Å. Depth profiles have been derived, and were modeled using an irreversible first order “trapping” reaction. Trapping may stem from confinement of the electron at a conjugated segment, that was donated through charge transfer typical for alkali/π-conjugated systems. This study demonstrates that evaporation of low work function metals onto organic systems should not be depicted as simple layered stacking structures. The enhanced electroluminescence with submonolayer K deposition is attributed to the shift of the recombination zone away from the Al cathode, which is demonstrated to prevail over the known exciton quenching mechanism due to the formation of gap states

Coherent Phonons in Carbon Nanotubes and Graphene

We review recent studies of coherent phonons (CPs) corresponding to the radial breathing mode (RBM) and G-mode in single-wall carbon nanotubes (SWCNTs) and graphene. Because of the bandgap-diameter relationship, RBM-CPs cause bandgap oscillations in SWCNTs, modulating interband transitions at terahertz frequencies. Interband resonances enhance CP signals, allowing for chirality determination. Using pulse shaping, one can selectively excite speci!c-chirality SWCNTs within an ensemble. G-mode CPs exhibit temperature-dependent dephasing via interaction with RBM phonons. Our microscopic theory derives a driven oscillator equation with a density-dependent driving term, which correctly predicts CP trends within and between (2n+m) families. We also find that the diameter can initially increase or decrease. Finally, we theoretically study the radial breathing like mode in graphene nanoribbons. For excitation near the absorption edge, the driving term is much larger for zigzag nanoribbons. We also explain how the armchair nanoribbon width changes in response to laser excitation.Comment: 48 pages, 41 figure

Optimization of a high work function solution processed vanadium oxide hole-extracting layer for small molecule and polymer organic photovoltaic cells

We report a method of fabricating a high work function, solution processable vanadium oxide (V2Ox(sol)) hole-extracting layer. The atmospheric processing conditions of film preparation have a critical influence on the electronic structure and stoichiometry of the V2Ox(sol), with a direct impact on organic photovoltaic (OPV) cell performance. Combined Kelvin probe (KP) and ultraviolet photoemission spectroscopy (UPS) measurements reveal a high work function, n-type character for the thin films, analogous to previously reported thermally evaporated transition metal oxides. Additional states within the band gap of V2Ox(sol) are observed in the UPS spectra and are demonstrated using X-ray photoelectron spectroscopy (XPS) to be due to the substoichiometric nature of V2Ox(sol). The optimized V2Ox(sol) layer performance is compared directly to bare indium–tin oxide (ITO), poly(ethyleneoxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and thermally evaporated molybdenum oxide (MoOx) interfaces in both small molecule/fullerene and polymer/fullerene structures. OPV cells incorporating V2Ox(sol) are reported to achieve favorable initial cell performance and cell stability attributes

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