Remote multispectral imaging with PRISMS and XRF analysis of Tang Tomb paintings

PRISMS (Portable Remote Imaging System for Multispectral Scanning) is a multispectral/hyperspectral imaging system designed for flexible in situ imaging of wall paintings at high resolution (tens of microns) over a large range of distances (less than a meter to over ten meters). This paper demonstrates a trial run of the VIS/NIR (400-880nm) component of the instrument for non-invasive imaging of wall paintings in situ. Wall painting panels from excavated Tang dynasty (618-907AD) tombs near Xi’an were examined by PRISMS. Pigment identifications were carried out using the spectral reflectance obtained from multispectral imaging coupled with non-invasive elemental analysis using a portable XRF

Electronic state and superconductivity of YBa2Cu3-xO7-y (M=Al,Zn and Sn) systems

A series of YBa2Cu(3-x)MxO(7-y) (M=Al,Zn and Sn) single phase samples were prepared, and the measurements of the crystal structure, oxygen content, electric resistivity, thermoelectric power, Mossbauer spectrum, XPS and superconductivity were performed. The experimental results of X ray powder diffraction, Mossbauer spectrum and oxygen content show that the Zn(2+) and the Al(3+) occupy the Cu(2) site in Cu-O planes and the Cu(1) site in Cu-O chains respectively, but the Sn(4+) occupies both the Cu(1) sites. As regards the properties in superconducting state, both the Zn(2+) and the Al(3+) depress T(sub c) strongly, but the Sn(4+) does not. As for the electronic transport properties in normal state, the system doped by Al(3+) displays a rapid increase of resistivity and some electron localization-like effects, and the thermoelectric power enhances obviously; the series contained Zn(2+) almost shows no changes of electric resistivity but the sign of the thermoelectric power is reversed. Other results are given and briefly discussed

Knowledge discovery for friction stir welding via data driven approaches: Part 2 – multiobjective modelling using fuzzy rule based systems

In this final part of this extensive study, a new systematic data-driven fuzzy modelling approach has been developed, taking into account both the modelling accuracy and its interpretability (transparency) as attributes. For the first time, a data-driven modelling framework has been proposed designed and implemented in order to model the intricate FSW behaviours relating to AA5083 aluminium alloy, consisting of the grain size, mechanical properties, as well as internal process properties. As a result, ‘Pareto-optimal’ predictive models have been successfully elicited which, through validations on real data for the aluminium alloy AA5083, have been shown to be accurate, transparent and generic despite the conservative number of data points used for model training and testing. Compared with analytically based methods, the proposed data-driven modelling approach provides a more effective way to construct prediction models for FSW when there is an apparent lack of fundamental process knowledge

On Gorenstein Surfaces Dominated by P^2

In this paper we prove that a normal Gorenstein surface dominated by the projective plane P^2 is isomorphic to a quotient P^2/G, where G is a finite group of automorphisms of P^2 (except possibly for one surface V_8'). We can completely classify all such quotients. Some natural conjectures when the surface is not Gorenstein are also stated.Comment: Nagoya Mathematical Journal, to appea

The structural, mechanical, electronic, optical and thermodynamic properties of t-X3_{3}As4_{4} (X == Si, Ge and Sn) by first-principles calculations

The structural, mechanical, electronic, optical and thermodynamic properties of the t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ (X $=$ Si, Ge and Sn) with tetragonal structure have been investigated by first principles calculations. Our calculated results show that these compounds are mechanically and dynamically stable. By the study of elastic anisotropy, it is found that the anisotropic of the t-Sn$_{\mathrm{3}}$As$_{\mathrm{4}}$ is stronger than that of t-Si$_{\mathrm{3}}$As$_{\mathrm{4}}$ and t-Ge$_{\mathrm{3}}$As$_{\mathrm{4}}$. The band structures and density of states show that the t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ (Si, Ge and Sn) are semiconductors with narrow band gaps. Based on the analyses of electron density difference, in t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ As atoms get electrons, X atoms lose electrons. The calculated static dielectric constants, $\varepsilon_{1} (0)$, are 15.5, 20.0 and 15.1 eV for t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ (X $=$ Si, Ge and Sn), respectively. The Dulong-Petit limit of t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ is about 10 J mol$^{\mathrm{-1}}$K$^{\mathrm{-1}}$. The thermodynamic stability successively decreases from t-Si$_{\mathrm{3}}$As$_{\mathrm{4}}$ to t-Ge$_{\mathrm{3}}$As$_{\mathrm{4}}$ to t-Sn$_{\mathrm{3}}$As$_{\mathrm{4}}$.Comment: 14 pages, 10 figures, 6 table