4,944 research outputs found
Millennials and the Increasing Use of Social Media: Impact on the Employee Life Cycle
The millennial generation is a generation of society that values technology, media, and connections, all three being equally important. This paper studies and theorizes the implications that social media has had on the workplace throughout the employee life cycle and how the traditional processes of this cycle have been altered. In the workforce, this aspect of the employee life cycle incorporates all different stages an employee goes through. From networking to being hired, to forming connections with co-workers, to working hard and performing well, to being fired, social media has impacted each stage of this cycle. Social media is a phenomenon that has continuously grown and has become important in all aspects of society, but this paper argues that it has specifically influenced the work world. Popular social media platforms like LinkedIn and Facebook have encouraged employees to utilize social media to help aid in networking and personal connections but have also been used by employers to determine the organizations hiring and firing process. Social media use has only increased in recent years and it is evident that the implications discussed in this paper have made extremely beneficial changes to the employee life cycle
Institutions Compromising Academics for Athletic and Economic Reward
Student athletes are an integral part of NCAA divisions, specifically student athletes of color. Through research regarding athletic and economic statistics, it has been proven that the necessity of talent in athletics is far more important than success in academics. Student athletes are often represented through their role as an athlete first, then followed by the role of the student. Graduation rates, athletic success, and economic profit is all explored in a racial context in this paper in order to further prove the exploitation that institutions involve themselves in
Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots
We have calculated band-edge energies for most combinations of zincblende
AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is
strained to the other. Calculations were done for three different geometries,
quantum wells, wires, and dots, and mean effective masses were computed in
order to estimate confinement energies. For quantum wells, we have also
calculated band-edges for ternary alloys. Energy gaps, including confinement,
may be easily and accurately estimated using band energies and a simple
effective mass approximation, yielding excellent agreement with experimental
results. By calculating all material combinations we have identified novel and
interesting material combinations, such as artificial donors, that have not
been experimentally realized. The calculations were perfomed using
strain-dependent k-dot-p theory and provide a comprehensive overview of band
structures for strained heterostructures.Comment: 9 pages, 17 figure
A simplified, compact static shift register
Shift register was developed which uses only one D type flip-flop and improves packaging density by approximately 25% over the usual arrangement. Circuit is compromise between full master-slave arrangement and dynamic shift register, with limitation only of length of time that clock can be held high during new data entry
Quantum wires from coupled InAs/GaAs strained quantum dots
The electronic structure of an infinite 1D array of vertically coupled
InAs/GaAs strained quantum dots is calculated using an eight-band
strain-dependent k-dot-p Hamiltonian. The coupled dots form a unique quantum
wire structure in which the miniband widths and effective masses are controlled
by the distance between the islands, d. The miniband structure is calculated as
a function of d, and it is shown that for d>4 nm the miniband is narrower than
the optical phonon energy, while the gap between the first and second minibands
is greater than the optical phonon energy. This leads to decreased optical
phonon scattering, providing improved quantum wire behavior at high
temperatures. These miniband properties are also ideal for Bloch oscillation.Comment: 5 pages revtex, epsf, 8 postscript figure
Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase
Optical properties of semiconductors can exhibit strong polarization
dependence due to crystalline anisotropy. A number of recent experiments have
shown that the photoluminescence intensity in free standing nanowires is
polarization dependent. One contribution to this effect is the anisotropy of
the dielectric function due to the fact that most nanowires crystalize in the
wurtzite form. While little is known experimentally about the band structures
wurtzite phase III-V semiconductors, we have previously predicted the bulk band
structure of nine III-V semiconductors in wurtzite phase.Here, we predict the
frequency dependent dielectric functions for nine non-Nitride wurtzite phase
III-V semiconductors (AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb).
Their complex dielectric functions are calculated in the dipole approximation
by evaluating the momentum matrix elements on a dense grid of special k-points
using empirical pseudopotential wave functions. Corrections to the momentum
matrix elements accounting for the missing core states are made using a scaling
factor which is determined by using the optical sum rules on the calculated
dielectric functions for the zincblende polytypes. The dielectric function is
calculated for polarizations perpendicular and parallel to the c-axis of the
crystal
Accuracy of circular polarization as a measure of spin polarization in quantum dot qubits
A quantum dot spin LED provides a test of carrier spin injection into a
qubit, as well as a means of analyzing carrier spin injection in general and
local spin polarization. The polarization of the observed light is, however,
significantly influenced by the dot geometry so the spin may be more polarized
than the emitted light would naively suggest. We have calculated carrier
polarization-dependent optical matrix elements using 8-band strain-dependent
k.p theory for InAs/GaAs self-assembled quantum dots (SAQDs) for electron and
hole spin injection into a range of quantum dot sizes and shapes, and for
arbitrary emission directions. The observed circular polarization does not
depend on whether the injected spin-polarized carriers are electrons or holes,
but is strongly influenced by the SAQD geometry and emission direction.
Calculations for typical SAQD geometries with emission along [110] show light
that is only ~5% circularly polarized for spin states that are 100% polarized
along [110]. Therefore observed polarizations [Chye et al. PRB 66, 201301(R)]
of ~1% imply a spin polarization within the dot of ~20%. We also find that
measuring along the growth direction gives near unity conversion of spin to
photon polarization, and is the least sensitive to uncertainties in SAQD
geometry.Comment: 4 pages, 6 figure
Phase 1 of the automated array assembly task of the low cost silicon solar array project
The results of a study of process variables and solar cell variables are presented. Interactions between variables and their effects upon control ranges of the variables are identified. The results of a cost analysis for manufacturing solar cells are discussed. The cost analysis includes a sensitivity analysis of a number of cost factors
Arkansas Soybean Performance Tests 2008
Soybean cultivar performance tests are conducted each year in Arkansas by the University of Arkansas Division of Agriculture. The tests provide information to companies developing cultivars and/or marketing seed within the state, and aid the Arkansas Cooperative Extension Service in formulating cultivar recommendations for soybean producer
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