Temperature dependence and quenching processes of the intra-4f luminescence of Er in crystalline Si

8 págs.; 7 figs.The luminescence quenching of Er in crystalline Si at temperatures between 77 and 300 K is investigated. Samples were prepared by solid-phase epitaxy of Er-implanted amorphous Si layers with or without O codoping. After epitaxial regrowth at 620°C, thermal annealing at 900°C for 30 sec was performed in order to eliminate residual defects in the regrown layer and electrically and optically activate the Er ions. Measurements of photoluminescence intensity and time decay were performed as a function of temperature and pump power. By increasing the temperature from 77 K to room temperature the luminescence intensity decreases by ~ three orders of magnitude in the Er-doped sample without O codoping, but only by a factor of 30 in the O-doped sample. In this sample room-temperature photo-luminescence and electroluminescence have been observed. Time-decay curves show a fast initial decay (~100 ¿sec) followed by a slow decay (~1 msec), with the relative intensity of these two components depending on temperature, pump power, and O codoping. The decay curves can be fitted by a sum of two exponential functions revealing the existence, in both samples, of two different classes of optically active Er sites. The concentration of excitable sites belonging to the slow-decaying class is similar for the samples with or without O codoping and rapidly decreases when temperature is increased. At temperatures above 150 K the Er luminescence is dominated by the fast-decaying centers the concentration of which is greatly increased by the presence of O. It is found that in the absence of oxygen room-temperature luminescence is hampered by the limited amount of excitable Er ions. In contrast, in O-doped samples the nonradiative decay of excited Er is the main quenching mechanism. The main factors determining the temperature quenching of Er luminescence and the crucial role of oxygen are discussed. © 1994 The American Physical Society.This work has been partially supported by GNSM-CNR. Work at the FOM Institute is part of the research program of the foundation for Fundamental Research on Matter (FOM), and was made possible by financial support from the Dutch organization for the Advancement of Research (NWO}, the Foundation for Technical Research (STW}, and the IC Technology Program (IOP Electro-optics) of the Ministry of Economic Affairs.Peer Reviewe

Hydrogen induced optically-active defects in silicon photonic nanocavities

This work was supported by Era-NET NanoSci LECSIN project coordinated by F. Priolo, by the Italian Ministry of University and Research, FIRB contract No. RBAP06L4S5 and by the EPSRC UKSp project. Partial financial support by the Norwegian Research Council is also acknowledged.We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- related defects incorporated into crystalline silicon. Hydrogen was incorporated into the device layer of a silicon on insulator (SOI) wafer by two methods: hydrogen plasma treatment and ion implantation. The room temperature PL spectra show two broad PL bands centered at 1300 and 1500 nm wavelengths: the first one relates to implanted defects while the other band mainly relates to the plasma treatment. Structural characterization reveals the presence of nanometric platelets and bubbles and we attribute different features of the emission spectrum to the presence of these different kind of defects. The emission is further enhanced by introducing defects into photonic crystal (PhC) nanocavities. Transmission electron microscopy analyses revealed that the isotropicity of plasma treatment causes the formation of a higher defects density around the whole cavity compared to the ion implantation technique, while ion implantation creates a lower density of defects embedded in the Si layer, resulting in a higher PL enhancement. These results further increase the understanding of the nature of optically active hydrogen defects and their relation with the observed photoluminescence, which will ultimately lead to the development of intense and tunable crystalline silicon light sources at room temperature.Publisher PDFPeer reviewe

Vitamin E is the major contributor to the antioxidant capacity in lambs fed whole dried citrus pulp.

The aim of this study was to investigate the effect of dietary whole dried citrus pulp (DCP) on the antioxidant status of lamb tissues. In total, 17 lambs were divided into two groups and fed for 56 days: a barley-based concentrate diet (CON - eight animals), or a concentrate-based diet including 35% DCP to partially replace barley (CIT - nine animals). The CIT diet contained a double concentration of phenolic compounds than the CON diet (7.9 v. 4.0 g/kg dry matter (DM), respectively), but had no effect (P>0.05) on the overall antioxidant capacity of the hydrophilic fraction of blood plasma, liver and muscle. The CIT diet contained clearly more α-tocopherol than the CON diet (45.7 v. 10.3 mg/kg DM), which could explain the higher concentration of α-tocopherol in liver, plasma and muscle (P<0.05). The dietary treatment had no effect on the extent of lipid peroxidation, measured as thiobarbituric acid and reactive substances assay (TBARS values) in the faeces, small intestine, liver, plasma and muscle. Nevertheless, when muscle homogenates were incubated in the presence of Fe3+/ascorbate to induce lipid peroxidation, the muscle from lambs fed DCP displayed lower TBARS values (P<0.01), which negatively correlated with the concentration of α-tocopherol in muscle. These results showed that feeding whole DCP to ruminants increases the antioxidant status of muscle through an increase in the deposition of α-tocopherol

Photonic Torque Microscopy of the Nonconservative Force Field for Optically Trapped Silicon Nanowires

We measure, by photonic torque microscopy, the nonconservative rotational motion arising from the transverse components of the radiation pressure on optically trapped, ultrathin silicon nanowires. Unlike spherical particles, we find that nonconservative effects have a significant influence on the nanowire dynamics in the trap. We show that the extreme shape of the trapped nanowires yields a transverse component of the radiation pressure that results in an orbital rotation of the nanowire about the trap axis. We study the resulting motion as a function of optical power and nanowire length, discussing its size-scaling behavior. These shape-dependent nonconservative effects have implications for optical force calibration and optomechanics with levitated nonspherical particles

Fluorine effect on As diffusion in Ge

The enhanced diffusion of donor atoms, via a vacancy (V)-mechanism, severely affects the realization of ultrahigh doped regions in miniaturized germanium (Ge) based devices. In this work, we report a study about the effect of fluorine (F) on the diffusion of arsenic (As) in Ge and give insights on the physical mechanisms involved. With these aims we employed experiments in Ge co-implanted with F and As and density functional theory calculations. We demonstrate that the implantation of F enriches the Ge matrix in V, causing an enhanced diffusion of As within the layer amorphized by F and As implantation and subsequently regrown by solid phase epitaxy. Next to the end-of-range damaged region F forms complexes with Ge interstitials, that act as sinks for V and induce an abrupt suppression of As diffusion. The interaction of Ge interstitials with fluorine interstitials is confirmed by theoretical calculations. Finally, we prove that a possible F-As chemical interaction does not play any significant role on dopant diffusion. These results can be applied to realize abrupt ultra-shallow n-type doped regions in future generation of Ge-based devices

Experimental quantification of useful and parasitic absorption of light in plasmon-enhanced thin silicon films for solar cells application

A combination of photocurrent and photothermal spectroscopic techniques is applied to experimentally quantify the useful and parasitic absorption of light in thin hydrogenated microcrystalline silicon (μc-Si:H) films incorporating optimized metal nanoparticle arrays, located at the rear surface, for improved light trapping via resonant plasmonic scattering. The photothermal technique accounts for the total absorptance and the photocurrent signal accounts only for the photons absorbed in the μc-Si:H layer (useful absorptance); therefore, the method allows for independent quantification of the useful and parasitic absorptance of the plasmonic (or any other) light trapping structure. We demonstrate that with a 0.9 μm thick absorber layer the optical losses related to the plasmonic light trapping in the whole structure are insignificant below 730 nm, above which they increase rapidly with increasing illumination wavelength. An average useful absorption of 43% and an average parasitic absorption of 19% over 400-1100 nm wavelength range is measured for μc-Si:H films deposited on optimized self-assembled Ag nanoparticles coupled with a flat mirror (plasmonic back reflector). For this sample, we demonstrate a significant broadband enhancement of the useful absorption resulting in the achievement of 91% of the maximum theoretical Lambertian limit of absorption

Visualization of Directional Beaming of Weakly Localized Raman from a Random Network of Silicon Nanowires

Disordered optical media are an emerging class of materials that can strongly scatter light. These materials are useful to investigate light transport phenomena and for applications in imaging, sensing and energy storage. While coherent light can be generated using such materials, its directional emission is typically hampered by their strong scattering nature. Here, the authors directly image Rayleigh scattering, photoluminescence and weakly localized Raman light from a random network of silicon nanowires via real-space microscopy and Fourier imaging. Direct imaging enables us to gain insight on the light transport mechanisms in the random material, to visualize its weak localization length and to demonstrate out-of-plane beaming of the scattered coherent Raman light. The direct visualization of coherent light beaming in such random networks of silicon nanowires offers novel opportunities for fundamental studies of light propagation in disordered media. It also opens venues for the development of next generation optical devices based on disordered structures, such as sensors, light sources, and optical switches

Monitoring the Microseismicity through a Dense Seismic Array and a Similarity Search Detection Technique: Application to the Seismic Monitoring of Collalto Gas-Storage, North Italy

Seismic monitoring in areas where induced earthquakes could occur is a challenging topic for seismologists due to the generally very low signal to noise ratio. Therefore, the seismological community is devoting several efforts to the development of high-quality networks around the areas where fluid injection and storage and geothermal activities take place, also following the national induced seismicity monitoring guidelines. The use of advanced data mining strategies, such as template matching filters, auto-similarity search, and deep-learning approaches, has recently further fostered such monitoring, enhancing the seismic catalogs and lowering the magnitude of completeness of these areas. In this framework, we carried out an experiment where a small-aperture seismic array was installed within the dense seismic network used for monitoring the gas reservoir of Collalto, in North Italy. The continuous velocimetric data, acquired for 25 days, were analysed through the application of the optimized auto-similarity search technique FAST. The array was conceived as a cost-effective network, aimed at integrating, right above the gas storage site, the permanent high-resolution Collalto Seismic Network. The analysis allowed to detect micro-events down to magnitude Ml = −0.4 within a distance of ~15 km from the array. Our results confirmed that the system based on the array installation and the FAST data analysis might contribute to lowering the magnitude of completeness around the site of about 0.7 units

AKT1 and MYC induce distinctive metabolic fingerprints in human prostate cancer

Cancer cells may overcome growth factor dependence by deregulating oncogenic and/or tumor-suppressor pathways that affect their metabolism, or by activating metabolic pathways de novo with targeted mutations in critical metabolic enzymes. It is unknown whether human prostate tumors develop a similar metabolic response to different oncogenic drivers or a particular oncogenic event results in its own metabolic reprogramming. Akt and Myc are arguably the most prevalent driving oncogenes in prostate cancer. Mass spectrometry-based metabolite profiling was performed on immortalized human prostate epithelial cells transformed by AKT1 or MYC, transgenic mice driven by the same oncogenes under the control of a prostate-specific promoter, and human prostate specimens characterized for the expression and activation of these oncoproteins. Integrative analysis of these metabolomic datasets revealed that AKT1 activation was associated with accumulation of aerobic glycolysis metabolites, whereas MYC overexpression was associated with dysregulated lipid metabolism. Selected metabolites that differentially accumulated in the MYC-high versus AKT1-high tumors, or in normal versus tumor prostate tissue by untargeted metabolomics, were validated using absolute quantitation assays. Importantly, the AKT1/MYC status was independent of Gleason grade and pathologic staging. Our fi ndings show how prostate tumors undergo a metabolic reprogramming that refl ects their molecular phenotypes, with implications for the development of metabolic diagnostics and targeted therapeutics.Instituto de Investigaciones Bioquímicas de La PlataFacultad de Ciencias Médica