A MAJORITY-MINORITY NATION: RACING THE POPULATION IN THE TWENTY-FIRST CENTURY

This article explores the factors that affect the creation of racial classifications and how they are reflected in the Census categories, particularly in regard to the classification of Hispanics. The article argues that an increase in racial minorities will not solely stop white racial domination of political power structures because of entrenched racial policies and practices. To end this domination, racial minorities must organize and collaborate to take down these racially oppressive structures

A MAJORITY-MINORITY NATION: RACING THE POPULATION IN THE TWENTY-FIRST CENTURY

This article explores the factors that affect the creation of racial classifications and how they are reflected in the Census categories, particularly in regard to the classification of Hispanics. The article argues that an increase in racial minorities will not solely stop white racial domination of political power structures because of entrenched racial policies and practices. To end this domination, racial minorities must organize and collaborate to take down these racially oppressive structures

Annoyance due to multiple airplane noise exposure

A laboratory study was conducted to investigate the annoyance effects of multiple aircraft noise exposure in which 250 subjects judged the annoyance of half-hour periods of airplane noise simulative of typical indoor home exposures. The variables of the aircraft noise exposure were the peak noise level of flyovers, which was constant within each period, and the number of flyovers. Each subject judged 5 of the possible 25 factorial combinations of level and number. Other variables investigated included the experience of the test subjects in making annoyance judgments and their home exposure to airplane noise. The annoyance judgments increased with both noise level and number of flyovers. The increased annoyance produced by doubling the number of flyovers was found to be the equivalent of a 4 to 6 db increase in noise level. The sensitivity of the subjects to changes in both noise level and number of flyovers increased with laboratory experience. Although the means of the annoyance judgments made in the laboratory were found to decrease with the subjects' home exposure to aircraft noise, the subjects' sensitivities to changes in both level and number were unaffected by their home exposure

Simulation of water vapor condensation on LOX droplet surface using liquid nitrogen

The formation of ice or water layers on liquid oxygen (LOX) droplets in the Space Shuttle Main Engine (SSME) environment was investigated. Formulation of such ice/water layers is indicated by phase-equilibrium considerations under conditions of high partial pressure of water vapor (steam) and low LOX droplet temperature prevailing in the SSME preburner or main chamber. An experimental investigation was begun using liquid nitrogen as a LOX simulant. A monodisperse liquid nitrogen droplet generator was developed which uses an acoustic driver to force the stream of liquid emerging from a capillary tube to break up into a stream of regularly space uniformly sized spherical droplets. The atmospheric pressure liquid nitrogen in the droplet generator reservoir was cooled below its boiling point to prevent two phase flow from occurring in the capillary tube. An existing steam chamber was modified for injection of liquid nitrogen droplets into atmospheric pressure superheated steam. The droplets were imaged using a stroboscopic video system and a laser shadowgraphy system. Several tests were conducted in which liquid nitrogen droplets were injected into the steam chamber. Under conditions of periodic droplet formation, images of 600 micron diameter liquid nitrogen droplets were obtained with the stroboscopic video systems

Silicon carbide, a high temperature semiconductor

Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Potential materials for these devices are compared and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described