comparing the VRIO-framework to the recognition heuristic

Decision-making heuristics are widely used in different economic and non- economic contexts to yield a good solution with an acceptable problem-solving effort. This paper presents the main features of an experimental research project to analyze the effectiveness and efficiency of selected heuristic techniques, which can be used to facilitate and improve the strategic decision-making process. The resource-based view and modern, psychologically inspired decision-making theory provides the theoretical basis for the study

examining the predictive power of the VRIO-framework

Strategy tools are widely used in the practice of strategic management to yield a good solution with an acceptable problem-solving effort. This paper presents results of an experimental research project that assesses the practical effectiveness of a theory-based decision-making tool, the VRIO- Framework, in predicting the stock-market performance of different companies. The VRIO’s predictive power is compared to the predictions derived from Analyst Ratings that are a widespread and commonly used tool in the decision- making context of this study. Our results suggest that the VRIO-Framework is a particularly effective forecasting tool whereas the power of Analyst Ratings is disputable. The results also provide support for the practical usefulness of resource-based theory

The hedging effectiveness of DAX futures

The focus of this study is DAX, the German stock index, which started trading in August, 1990. Concludes that static hedging remains the preferred strategy for the DAX

Spectroscopy of electronic defect states in Cu(In, Ga)(S, Se)2_2-based heterojunctions and Schottky diodes under damp-heat exposure

The changes of defect characteristics induced by accelerated lifetime tests on the heterostructure n-ZnO/i-ZnO/CdS/Cu(In, Ga)(S, Se)$_2$/Mo relevant for photovoltaic energy conversion are investigated. We subject heterojunction and Schottky devices to extended damp heat exposure at 85$^{\circ}$C ambient temperature and 85% relative humidity for various time periods. In order to understand the origin of the pronounced changes of the devices, we apply current--voltage and capacitance--voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. The fill factor and open-circuit voltage of test devices are reduced after prolonged damp heat treatment, leading to a reduced energy conversion efficiency. We observe the presence of defect states in the vicinity of the CdS/chalcopyrite interface. Their activation energy increases due to damp heat exposure, indicating a reduced band bending at the Cu(In, Ga)(S, Se)$_2$ surface. The Fermi-level pinning at the buffer/chalcopyrite interface, maintaining a high band bending in as-grown cells, is lifted due to the damp-heat exposure. We also observe changes in the bulk defect spectra due to the damp-heat treatment.Comment: 4 pages, 5 figure

Rubidium Fluoride Post-Deposition Treatment: Impact on the Chemical Structure of the Cu(In,Ga)Se2 Surface and CdS/Cu(In,Ga)Se2 Interface in Thin-Film Solar Cells.

We present a detailed characterization of the chemical structure of the Cu(In,Ga)Se2 thin-film surface and the CdS/Cu(In,Ga)Se2 interface, both with and without a RbF post-deposition treatment (RbF-PDT). For this purpose, X-ray photoelectron and Auger electron spectroscopy, as well as synchrotron-based soft X-ray emission spectroscopy have been employed. Although some similarities with the reported impacts of light-element alkali PDT (i.e., NaF- and KF-PDT) are found, we observe some distinct differences, which might be the reason for the further improved conversion efficiency with heavy-element alkali PDT. In particular, we find that the RbF-PDT reduces, but not fully removes, the copper content at the absorber surface and does not induce a significant change in the Ga/(Ga + In) ratio. Additionally, we observe an increased amount of indium and gallium oxides at the surface of the treated absorber. These oxides are partly (in the case of indium) and completely (in the case of gallium) removed from the CdS/Cu(In,Ga)Se2 interface by the chemical bath deposition of the CdS buffer

DLTS investigations on CIGS solar cells from an inline co-evaporation system with RbF post-deposition treatment

In this study, Deep Level Transient Spectroscopy (DLTS) measurements have been performed on Cu(In,Ga)Se$_{2}$ (CIGS) solar cells from an inline co-evaporation system. The focus of this investigation is directed on the effect of rubidium-fluoride (RbF)-post-deposition treatment (PDT) on the defects in the CIGS absorber layer. Different traps can be identified and their properties are calculated. Herein, different methods of evaluations have been used to verify the results. Specifically, one minority trap around 400 meV was found to show a significant reduction of the trap density due to the alkali treatment. In contrast, a majority trap at approximately 600 meV is unaffected