The CiCs, Si-I. defect in silicon: An infrared spectroscopy study

Infrared (IR) spectroscopy was employed for a thorough study of the CiCs(Si-I) defect formed in neutron-irradiated carbon-carbon Czochralski silicon material. Its IR signals at 987 and 993 cm(-1), as well as the thermal evolution of the defect were examined and discussed. Based on a previously suggested structure model of this defect its local vibrational mode frequencies were calculated. The estimated values lie very close to the experimentally detected frequencies at 987 and 993 cm(-1), supporting their previous assignment to the CiCs(Si-I) defect. The decay of the center in the spectra was found to be governed by a second order kinetics, with an activation energy around 1.27 eV. (c) 2006 American Institute of Physics

Carbon-related complexes in neutron-irradiated silicon

Abstract In this work, we have studied point defects in carbon-doped Si material, irradiated by fast neutrons, via the observation of the Infrared absorption spectra. We mainly focus on carbon-related defects and their complexing with primary defects. We discuss the localized vibrational mode bands related to these defects, their annealing behavior and their interactions. Infrared spectra recorded at room temperature reveal the presence of a band at 544 cm À1 , appearing only in C-rich Si, and showing similar thermal stability to that of the di-carbon (C i C s ) defect. In addition, its amplitude scales with the carbon content of the material. We attributed this band to the (C i C s ) center. Two bands, at 987 and 993 cm À1 were attributed to the C i C s (Si I ) center. Furthermore, the origin of a C-related band at 943 cm À1 is discussed

The origin of infrared bands in nitrogen-doped Si

This work reports Fourier-transform infrared spectroscopy (FTIR) investigations on electron irradiated, nitrogen-doped Czochralski-grown silicon (Cz-Si). The study focuses mainly on the detection and thermal evolution of bands related to various nitrogen (N) and vacancy-nitrogen substitutional (VN)-related defects formed prior and after the irradiation of the material. Thus, in the first place, we refer to the presence of bands related to N impurity in the range 640-720 cm(-1) of IR spectra, where most VN defects are expected to give signals. tau hen, by following the thermal evolution of the detected IR bands and by considering the formation energies of the various N and VN defects, we discuss their possible correlation with different N or VN defects. We suggest that (i) the 650 cm(-1) band relates to the N-s and with the VN1 at different temperature ranges, (ii) the 655 cm(-1) relates to the N-s defect, (iii) the 660 cm(-1) relates to the VN1 defect, (iv) the 678 cm(-1) band relates to the N-i-N-s defect and the V2N2 defect at different temperature ranges, (v) the 684 cm(-1) band relates to the VN2 defect, and (vi) the 689 cm(-1) band relates to the N-i, VN1 and V2N2 defect at different temperature ranges

The Ci(SiI)n defect in neutron-irradiated silicon

We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (Ci) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of Ci(SiI) defects and upon annealing to the sequential formation of Ci(SiI)n complexes. Infrared spectroscopy measurements report the detection of two localized vibrational bands at 953 and 960 cm−1 related to the Ci(SiI) defect. The thermal stability and annealing kinetics of the defect are discussed. The decay out of the two bands occurs in the temperature range of 130–200 °C. They follow second-order kinetics with an activation energy of 0.93 eV. No other bands were detected to grow in the spectra upon their annealing. Density functional theory calculations were used to investigate the structure and the energetics of the Ci(SiI) and the Ci(SiI)2 defects. © 2019, Springer Science+Business Media, LLC, part of Springer Nature

Theoretical investigation of nitrogen-vacancy defects in silicon

Nitrogen-vacancy defects are important for the material properties of silicon and for the performance of silicon-based devices. Here, we employ spin polarized density functional theory to calculate the minimum energy structures of the vacancy-nitrogen substitutional, vacancy-dinitrogen substitutionals, and divacancy-dinitrogen substitutionals. The present simulation technique enabled us to gain insight into the defect structures and charge distribution around the doped N atom and the nearest neighboring Si atoms. Using the dipole-dipole interaction method, we predict the local vibration mode frequencies of the defects and discuss the results with the available experimental data.& nbsp;(c) 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/)