Carbon-related complexes in neutron-irradiated silicon

Abstract

Abstract In this work, we have studied point defects in carbon-doped Si material, irradiated by fast neutrons, via the observation of the Infrared absorption spectra. We mainly focus on carbon-related defects and their complexing with primary defects. We discuss the localized vibrational mode bands related to these defects, their annealing behavior and their interactions. Infrared spectra recorded at room temperature reveal the presence of a band at 544 cm À1 , appearing only in C-rich Si, and showing similar thermal stability to that of the di-carbon (C i C s ) defect. In addition, its amplitude scales with the carbon content of the material. We attributed this band to the (C i C s ) center. Two bands, at 987 and 993 cm À1 were attributed to the C i C s (Si I ) center. Furthermore, the origin of a C-related band at 943 cm À1 is discussed