A Baghdadi

A Chroneos

A Gali

A Karoui

A Taguchi

A. Chroneos

C Cui

C Gao

C. A. Londos

CA Londos

CN Koumelis

D Yang

E Rotem

E. N. Sgourou

EN Sgourou

F Sahtout Karoui

G Davies

H Ishii

H Kageshima

H Sawada

H Tahini

H Wang

HC Alt

HCh Alt

HJ Stein

J Coutinho

JH Zhou

JL Regolini

JP Goss

JW Corbett

K Nakai

K Sumino

KL Brower

LI Murin

LS Adam

M Akatsuka

M Belli

M Pesola

MS Potsidi

MW Qi

N Fujita

N Inoue

NR Zangenberg

NV Sarlis

P Chen

P Wagner

R Jones

RA Casali

RFX Ma

RV Vovk

S Takeuchi

SG Cloutier

T. Angeletos

VD Ahmetov

VV Voronkov

W Kaiser

X Yu

Y Yatsurugi

Z Zhu

Nitrogen is a key dopant in Czochralski silicon widely used to control properties of Si wafers for applications in the microelectronics industry. Most of these properties are affected by defects and their processes. Here we employ Fourier transform infrared spectroscopy to investigate the existence of radiation induced N-related defects in Si. Besides well-known signals of substitutional (Ns) at 653 cm−1, interstitial (Ni) at 691 cm−1, N2 at 766 cm−1, N–O complexes at 801, 996 and 1026 cm−1 and N2O at 973 and 996 cm−1 we determined some additional signals. The pair of bands at 646 and 663 cm−1 has been tentatively correlated with the Ns V pair in agreement with previous theoretical calculations. Similarly the pair of bands at 725 and 778 cm−1 has been tentatively correlated with the N2 V complex and another pair of bands at 930 and 953 cm−1 may be related with the N2SiI complex. Additionally, oxygen-vacancy defects such as the vacancy-oxygen pair (A-center or VO) are common in electron irradiated Si and can impact the material and electronic properties of Si. We investigate and compare the effect of N doping on oxygen-vacancy defects in electron irradiated Si. It is determined that nitrogen reduces the production of VO defects

Infrared study of defects in nitrogen-doped electron irradiated silicon

Abstract

Similar works

Full text

Available Versions

Coventry University Pure Portal

Crossref