65 research outputs found
Coulomb drag as a measure of trigonal warping in doped graphene
I suggest to use the effect of Coulomb drag between two closely positioned
graphite monolayers (graphene sheets) for experimental measurement of the
strength of weak non-linearities of the spectrum in graphene. I consider
trigonal warping as a representative mechanism responsible for the drag effect.
Since graphene is relatively defect-free, I evaluate the drag conductivity in
the ballistic regime and find that it is proportional to the fourth power of
the warping strength.Comment: 4 pages, 1 figur
Spin Hall Drag
We predict a new effect in electronic bilayers: the {\it Spin Hall Drag}. The
effect consists in the generation of spin accumulation across one layer by an
electric current along the other layer. It arises from the combined action of
spin-orbit and Coulomb interactions. Our theoretical analysis, based on the
Boltzmann equation formalism, identifies two main contributions to the spin
Hall drag resistivity: the side-jump contribution, which dominates at low
temperature, going as , and the skew-scattering contribution, which is
proportional to . The induced spin accumulation is large enough to be
detected in optical rotation experiments.Comment: 5 pages, 2 figure
Van der Waals Frictional Drag induced by Liquid Flow in Low- Dimensional Systems
We study the van der Waals frictional drag force induced by liquid flow in
low-dimensional systems (2D and 1D electron systems, and 2D and 1D channels
with liquid). We find that for both 1D and 2D systems, the frictional drag
force induced by liquid flow may be several orders of magnitude larger than the
frictional drag induced by electronic current.Comment: 10 pages, 4 figure
Magnon Mediated Electric Current Drag Across a Ferromagnetic Insulator Layer
In a semiconductor hererostructure, the Coulomb interaction is responsible
for the electric current drag between two 2D electron gases across an electron
impenetrable insulator. For two metallic layers separated by a ferromagnetic
insulator (FI) layer, the electric current drag can be mediated by a
nonequilibrium magnon current of the FI. We determine the drag current by using
the semiclassical Boltzmann approach with proper boundary conditions of
electrons and magnons at the metal-FI interface.Comment: 13 pages, 2 figures: to appear in PR
On Coulomb drag in double layer systems
We argue, for a wide class of systems including graphene, that in the low
temperature, high density, large separation and strong screening limits the
drag resistivity behaves as d^{-4}, where d is the separation between the two
layers. The results are independent of the energy dispersion relation, the
dependence on momentum of the transport time, and the wave function structure
factors. We discuss how a correct treatment of the electron-electron
interactions in an inhomogeneous dielectric background changes the theoretical
analysis of the experimental drag results of Ref. [1]. We find that a
quantitative understanding of the available experimental data [1] for drag in
graphene is lacking.Comment: http://iopscience.iop.org/0953-8984/24/33/335602
Effective Drag Between Strongly Inhomogeneous Layers: Exact Results and Applications
We generalize Dykhne's calculation of the effective resistance of a 2D
two-component medium to the case of frictional drag between the two parallel
two-component layers. The resulting exact expression for the effective
transresistance, , is analyzed in the limits when the resistances
and transresistances of the constituting components are strongly different -
situation generic for the vicinity of the {\em classical} (percolative)
metal-insulator transition (MIT). On the basis of this analysis we conclude
that the evolution of across the MIT is determined by the type
of correlation between the components, constituting the 2D layers. Depending on
this correlation, in the case of two electron layers, changes
either monotonically or exhibits a sharp maximum. For electron-hole layers
is negative and exhibits a sharp minimum at the
MIT.Comment: 7 pages, 3 figure
Can Hall drag be observed in Coulomb coupled quantum wells in a magnetic field?
We study the transresistivity \tensor\rho_{21} (or equivalently, the drag
rate) of two Coulomb-coupled quantum wells in the presence of a perpendicular
magnetic field, using semi-classical transport theory. Elementary arguments
seem to preclude any possibility of observation of ``Hall drag'' (i.e., a
non-zero off-diagonal component in \tensor\rho_{21}). We show that these
arguments are specious, and in fact Hall drag can be observed at sufficiently
high temperatures when the {\sl intra}layer transport time has
significant energy-dependence around the Fermi energy . The
ratio of the Hall to longitudinal transresistivities goes as , where
is the temperature, is the magnetic field, and .Comment: LaTeX, 13 pages, 2 figures (to be published in Physica Scripta, Proc.
of the 17th Nordic Semiconductor Conference
Coulomb drag between quantum wires with different electron densities
We study the way back-scattering electron--electron interaction generates
Coulomb drag between quantum wires with different densities. At low temperature
the system can undergo a commensurate-- incommensurate transition as the
potential difference between the two wires passes a critical value
, and this transition is reflected in a marked change in the dependence
of drag resistivity on and . At high temperature a density difference
between the wires suppresses Coulomb drag induced by back scattering, and we
use the Tomonaga--Luttinger model to study this suppression in detail.Comment: 6 pages, 4 figure
Coulomb Drag for Strongly Localized Electrons: Pumping Mechanism
The mutual influence of two layers with strongly loclized electrons is
exercised through the random Coulomb shifts of site energies in one layer
caused by electron hops in the other layer. We trace how these shifts give rise
to a voltage drop in the passive layer, when a current is passed through the
active layer. We find that the microscopic origin of drag lies in the time
correlations of the occupation numbers of the sites involved in a hop. These
correlations are neglected within the conventional Miller-Abrahams scheme for
calculating the hopping resistance.Comment: 5 pages, 3 figure
Intershell resistance in multiwall carbon nanotubes: A Coulomb drag study
We calculate the intershell resistance R_{21} in a multiwall carbon nanotube
as a function of temperature T and Fermi level (e.g. a gate voltage), varying
the chirality of the inner and outer tubes. This is done in a so-called Coulomb
drag setup, where a current I_1 in one shell induces a voltage drop V_2 in
another shell by the screened Coulomb interaction between the shells neglecting
the intershell tunnelling. We provide benchmark results for R_{21}=V_2/I_1
within the Fermi liquid theory using Boltzmann equations. The band structure
gives rise to strongly chirality dependent suppression effects for the Coulomb
drag between different tubes due to selection rules combined with mismatching
of wave vector and crystal angular momentum conservation near the Fermi level.
This gives rise to orders of magnitude changes in R_{21} and even the sign of
R_{21} can change depending on the chirality of the inner and outer tube and
misalignment of inner and outer tube Fermi levels. However for any tube
combination, we predict a dip (or peak) in R_{21} as a function of gate
voltage, since R_{21} vanishes at the electron-hole symmetry point. As a
byproduct, we classified all metallic tubes into either zigzag-like or
armchair-like, which have two different non-zero crystal angular momenta m_a,
m_b and only zero angular momentum, respectively.Comment: 17 pages, 10 figure
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