Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Growth of GaAs/GaAsSb heterostructurenanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAsnanowires is first obtained, and then GaAsₓSb₁ˍₓ segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAsnanowire and passivated using an AlₓGa₁ˍₓAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.Part of this work was funded by the Swedish Foundation for Strategic Research SSF, the Swedish Research Council VR, and the Knut and Alice Wallenberg Foundation

Spectroscopy of spin-orbit quantum bits in indium antimonide nanowires

Double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. The spectrum of two-electron eigenstates is investigated using electric dipole spin resonance. Singlet-triplet level repulsion caused by spin-orbit interaction is observed. The size and the anisotropy of singlet-triplet repulsion are used to determine the magnitude and the orientation of the spin-orbit effective field in an InSb nanowire double dot. The obtained results are confirmed using spin blockade leakage current anisotropy and transport spectroscopy of individual quantum dots.Comment: 5 pages, supplementary material available at http://link.aps.org/supplemental/10.1103/PhysRevLett.108.16680

Realization of microwave quantum circuits using hybrid superconducting-semiconducting nanowire Josephson elements

We report the realization of quantum microwave circuits using hybrid superconductor-semiconductor Josephson elements comprised of InAs nanowires contacted by NbTiN. Capacitively-shunted single elements behave as transmon qubits with electrically tunable transition frequencies. Two-element circuits also exhibit transmon-like behavior near zero applied flux, but behave as flux qubits at half the flux quantum, where non-sinusoidal current-phase relations in the elements produce a double-well Josephson potential. These hybrid Josephson elements are promising for applications requiring microwave superconducting circuits operating in magnetic field.Comment: Main text: 4 pages, 4 figures; Supplement: 10 pages, 8 figures, 1 tabl

Electrical control over single hole spins in nanowire quantum dots

Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes

Spin-orbit interaction in InSb nanowires

We use magnetoconductance measurements in dual-gated InSb nanowire devices together with a theoretical analysis of weak antilocalization to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of $0.5 -1\,\text{eV\r{A}}$ corresponding to a spin-orbit energy of $0.25-1\,\text{meV}$. These values underline the potential of InSb nanowires in the study of Majorana fermions in hybrid semiconductor-superconductor devices.Comment: Version as accepted for publication as a Rapid in Phys. Rev.

Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices

Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. We report electrical measurements on InSb nanowires contacted with one normal (Au) and one superconducting electrode (NbTiN). Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields of order 100 mT we observe bound, mid-gap states at zero bias voltage. These bound states remain fixed to zero bias even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors.Comment: Raw data available at http://dx.doi.org/10.4121/uuid:8bf81177-2f2b-49c2-aaf5-d36739873dd

Josephson φ_0-junction in nanowire quantum dots

The Josephson effect describes supercurrent flowing through a junction connecting two superconducting leads by a thin barrier. This current is driven by a superconducting phase difference ϕ between the leads. In the presence of chiral and time-reversal symmetry of the Cooper pair tunnelling process2, the current is strictly zero when ϕ vanishes. Only if these underlying symmetries are broken can the supercurrent for ϕ = 0 be finite. This corresponds to a ground state of the junction being offset by a phase ϕ_0, different from 0 or π. Here, we report such a Josephson ϕ0-junction based on a nanowire quantum dot. We use a quantum interferometer device to investigate phase offsets and demonstrate that ϕ_0 can be controlled by electrostatic gating. Our results may have far-reaching implications for superconducting flux- and phase-defined quantum bits as well as for exploring topological superconductivity in quantum dot systems

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench