Perceptions of Cheating and Doping in E-Cycling

E-cycling is a growing area of cycling appealing to competitive cyclists and fitness enthusiasts. Zwift is the most popular e-cycling platform, with approx. 1 million subscribers and is a virtual environment that hosts regular races, including the UCI e-cycling world championships. Thepopularity of Zwift has given rise to cases of cheating and hacking the system to gain an advantagein e-racing. As a result, some high-profile professional riders have faced bans. We set out to understand the thoughts and concerns e-cyclists have about cheating, hacking, and doping in e-cycling.A total of 337 females and 1130 males were recruited over a 7-week period via social networkingsites to complete an online survey. Forty-four per cent had experienced cheating during e-racing,which made them feel angry, annoyed, disappointed, and cheated. However, 15% of those whoexperienced cheating said they did not care, possibly because many see e-racing as a game or training tool rather than a competitive event. Eighty-seven per cent of participants were in favour ofenforcing a ban on cheaters in e-cycling, while 34% wanted cheaters to be banned during in-personcycling events too. Results indicate that many e-cyclists have experienced cheating and would likeclearer rules and bans for cheaters during e-races

Evidence for Interlayer Electronic Coupling in Multilayer Epitaxial Graphene from Polarization Dependent Coherently Controlled Photocurrent Generation

Most experimental studies to date of multilayer epitaxial graphene on C-face SiC have indicated that the electronic states of different layers are decoupled as a consequence of rotational stacking. We have measured the third order nonlinear tensor in epitaxial graphene as a novel approach to probe interlayer electronic coupling, by studying THz emission from coherently controlled photocurrents as a function of the optical pump and THz beam polarizations. We find that the polarization dependence of the coherently controlled THz emission expected from perfectly uncoupled layers, i.e. a single graphene sheet, is not observed. We hypothesize that the observed angular dependence arises from weak coupling between the layers; a model calculation of the angular dependence treating the multilayer structure as a stack of independent bilayers with variable interlayer coupling qualitatively reproduces the polarization dependence, providing evidence for coupling.Comment: submitted to Nano Letter

Block Structured Adaptive Mesh and Time Refinement for Hybrid, Hyperbolic + N-body Systems

We present a new numerical algorithm for the solution of coupled collisional and collisionless systems, based on the block structured adaptive mesh and time refinement strategy (AMR). We describe the issues associated with the discretization of the system equations and the synchronization of the numerical solution on the hierarchy of grid levels. We implement a code based on a higher order, conservative and directionally unsplit Godunov's method for hydrodynamics; a symmetric, time centered modified symplectic scheme for collisionless component; and a multilevel, multigrid relaxation algorithm for the elliptic equation coupling the two components. Numerical results that illustrate the accuracy of the code and the relative merit of various implemented schemes are also presented.Comment: 40 pages, 10 figures, JPC in press. Extended the code test section, new convergence tests, several typos corrected. Full resolution version available at http://www.exp-astro.phys.ethz.ch/miniati/charm.pd

Hot carrier cooling by acoustic phonons in epitaxial graphene by ultrafast pump-probe spectroscopy

We report the application nondegenerate ultrafast mid-infrared spectroscopy to investigate the acoustic phonon cooling process in epitaxial graphene. We show that the power-dependent experimental results match theoretical predictions of the low temperature acoustic cooling process. The hot phonon effect in acoustic phonon cooling is observed experimentally, and a deformation potential of 30 eV can be determined from fitting the data. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/83459/1/1194_ftp.pd

Three-Terminal Si-Based Negative Differential Resistance Circuit Element with Adjustable Peak-to-Valley Current Ratios Using a Monolithic Vertical Integration

Si-based resonant bipolar transistors are demonstrated by the monolithic vertical integration of Si-based resonant interband tunnel diodes atop the emitter of Si/SiGe heterojunction bipolar transistors ~HBTs! on a silicon substrate. In the common emitter configuration, IC versus VCE shows negative differential resistance characteristics. The resulting characteristics are adjustable peak-to-valley current ratios, including infinite and negative values, and tailorable peak current densities by the control of the HBT base current under room temperature operation. With the integrated RITD-HBT combination, latching properties which are the key operating principle for high-speed mixed-signal, memory, and logic circuitry, are experimentally demonstrated