Isomeric states close to doubly magic 132^{132}Sn studied with JYFLTRAP

The double Penning trap mass spectrometer JYFLTRAP has been employed to measure masses and excitation energies for $11/2^-$ isomers in $^{121}$Cd, $^{123}$Cd, $^{125}$Cd and $^{133}$Te, for $1/2^-$ isomers in $^{129}$In and $^{131}$In, and for $7^-$ isomers in $^{130}$Sn and $^{134}$Sb. These first direct mass measurements of the Cd and In isomers reveal deviations to the excitation energies based on results from beta-decay experiments and yield new information on neutron- and proton-hole states close to $^{132}$Sn. A new excitation energy of 144(4) keV has been determined for $^{123}$Cd$^m$. A good agreement with the precisely known excitation energies of $^{121}$Cd$^m$, $^{130}$Sn$^m$, and $^{134}$Sb$^m$ has been found.Comment: 10 pages, 6 figures, submitted to Phys. Rev.

“Superconductor-Insulator Transition” in a Single Josephson Junction

VI curves of resistively shunted single Josephson junctions with different capacitances and tunneling resistances are found to display a crossover between two types of VI curves: one without and another with a resistance bump (negative second derivative) at zero bias. The crossover corresponds to the dissipative phase transition (superconductor-insulator transition) at which macroscopic quantum tunneling delocalizes the Josephson phase and destroys superconductivity. Our measured phase diagram does not agree with the diagram predicted by the original theory, but does coincide with a theory that takes into account the accuracy of voltage measurements and thermal fluctuations.Peer reviewe

Q_EC values of the Superallowed beta-Emitters 10-C, 34-Ar, 38-Ca and 46-V

The Q_EC values of the superallowed beta+ emitters 10-C, 34-Ar, 38-Ca and 46-V have been measured with a Penning-trap mass spectrometer to be 3648.12(8), 6061.83(8), 6612.12(7) and 7052.44(10) keV, respectively. All four values are substantially improved in precision over previous results.Comment: 9 pages, 7 figures, 5 table

Noise of a single electron transistor on a Si3N4 membrane

We have investigated the influence of electron-beam writing on the creation of charge trapping centers which cause 1/f noise in single electron transistors (SET). Two Al/AlOx/Al devices were compared: one where the SET is on a {100} silicon wafer covered by a 120-nm-thick layer of Si3N4, and another one in which the Si was etched away from below the nitride membrane before patterning the SET. The background charge noise was found to be 1×10 exp −3 e/√Hz at 10 Hz in both devices, independent of the substrate thickness.Peer reviewe

Evidence of 4He Crystallization via Quantum Tunneling at mK Temperatures

We have investigated creation of 4He crystals from the superfluid phase at the temperature range 2 mK–1.0 K. Statistical nucleation-event distributions in overpressure were found to be broad, asymmetric, and temperature independent below 100 mK. Our statistical analysis agrees with a theoretical model suggesting that solid formation is driven by macroscopical quantum-mechanical fluctuations from a seed preexisting in a cavity on the wall.Peer reviewe

Multiwalled carbon nanotube: Luttinger liquid or not?

We have measured IV-curves of multiwalled carbon nanotubes using end contacts. At low voltages, the tunneling conductance obeys non-Ohmic power law, which is predicted both by the Luttinger liquid and the environment-quantum-fluctuation theories. However, at higher voltages we observe a crossover to Ohm's law with a Coulomb-blockade offset, which agrees with the environment-quantum-fluctuation theory, but cannot be explained by the Luttinger-liquid theory. From the high-voltage tunneling conductance we determine the transmission line parameters of the nanotubes.Comment: RevTeX, 4 pages, 2 EPS-figures, submitted to Phys. Rev. Let

Facet Growth of 4He Crystals at mK Temperatures

We have investigated growth of c facets in good quality helium crystals with screw dislocation densities 0–20 cm exp −2 along the c axis. Three distinct regimes of growth were observed. One of them can be explained by spiral growth provided that kinetic energy of moving steps and their tendency to localization at large driving forces are taken into account. In the absence of screw dislocations we find burstlike growth unless the speed is less than 0.5 nm/s, in which case anomalous, intrinsic growth of facets is detected.Peer reviewe

Superconductor-insulator quantum phase transition in a single Josephson junction

The superconductor-to-insulator quantum phase transition in resistively shunted Josephson junctions is investigated by means of path-integral Monte Carlo simulations. This numerical technique allows us to directly access the (previously unexplored) regime of the Josephson-to-charging energy ratios E_J/E_C of order one. Our results unambiguously support an earlier theoretical conjecture, based on renormalization-group calculations, that at T -> 0 the dissipative phase transition occurs at a universal value of the shunt resistance R_S = h/4e^2 for all values E_J/E_C. On the other hand, finite-temperature effects are shown to turn this phase transition into a crossover, which position depends significantly on E_J/E_C, as well as on the dissipation strength and on temperature. The latter effect needs to be taken into account in order to reconcile earlier theoretical predictions with recent experimental results.Comment: 7 pages, 6 figure

Temperature Dependence of Zero-Bias Resistances of a Single Resistance-Shunted Josephson Junction

Zero-bias resistances of a single resistance-shunted Josephson junction are calculated as a function of the temperature by means of the path-integral Monte Carlo method in case a charging energy $E_{\rm C}$ is comparable with a Josephson energy $E_{\rm J}$. The low-temperature behavior of the zero-bias resistance changes around $\alpha=R_{\rm Q}/R_{\rm S}=1$, where $R_{\rm S}$ is a shunt resistance and $R_{\rm Q}=h/(2e)^2$. The temperature dependence of the zero-bias resistance shows a power-law-like behavior whose exponent depends on $E_{\rm J}/E_{\rm C}$. These results are compared with the experiments on resistance-shunted Josephson junctions