Dark Count rate measurement in Geiger mode and simulation of a photodiode array, with CMOS 0.35 technology and transistor quenching.

International audienceSome decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD detectors fabricated in a standard CMOS technology feature both single-photon sensitivity, and excellent timing resolution, while guarantying a high integration. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse. In this work, we investigate the design of SPAD detectors using the Austriamicrosystems 0.35 μm CMOS Opto technology. A series of different SPADs has been fabricated and benchmarked in order to evaluate a future integration into a SPAD- based image sensor. The main characteristics of each SPAD operating in Geiger-mode are reported: current voltage, breakdown voltage as a function of temperature. From this first set of results, a detailed study of the Dark Count Rate (DCR) has been conducted. Our results show a dark count rate increase with the size of the photodiodes and the temperature (at T=22.5°C, the DCR of a 10μm-photodiode is 2020 count.s-1 while it is 270 count.s-1 at T=- 40°C for a overvoltage of 800mV). We found that the adjustment of overvoltage is very sensitive and depends on the temperature. The temperature will be adjusted for the subsequent experiments. A mathematical model is presented for reproduce the DCR of a single photodiode. We simulated the noise (DCR) of array of 32x32 photo-detectors. Our results show, of course an increase of DCR of 1024, but especially, the probability of having two pulses simultaneously is 0 (without light). By studying these probabilities of occurrence of the pulses, we think we can reduce the DCR of 50% with a statistical method and reduce the crosstalk of 90%. This study is realized in order to prepare the first digital matrices sensor in Geiger mode

Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology

International audienceSome decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse.This paper discusses SPAD detectors fabricated in a standard CMOS technology featuring both single-photon sensitivity, and excellent timing resolution, while guaranteeing a high integration. In this work, we investigate the design of SPAD detectors using the AMS 0.35 µm CMOS Opto technology. Indeed, such standard CMOS technology allows producing large surface (few mm2) of single photon sensitive detectors. Moreover, SPAD in CMOS technologies could be associated to electronic readout such as active quenching, digital to analog converter, memories and any specific processing required to build efficient calorimeters1 (Silicon PhotoMultiplier – SiPM) or high resolution imagers (SPAD imager). The present work investigates SPAD geometry. MOS transistor has been used instead of resistor to adjust the quenching resistance and find optimum value. From this first set of results, a detailed study of the dark count rate (DCR) has been conducted. Our results show a dark count rate increase with the size of the photodiodes and the temperature (at T=22.5 °C, the DCR of a 10 µm-photodiode is 2020 count s−1 while it is 270 count s−1 at T=−40 °C for a overvoltage of 800 mV). A small pixel size is desirable, because the DCR per unit area decreases with the pixel size. We also found that the adjustment of overvoltage is very sensitive and depends on the temperature. The temperature will be adjusted for the subsequent experiments

Erratum: The solar orbiter radio and plasma waves (RPW) instrument (Astronomy and Astrophysics (2020) 642 (A12) DOI: 10.1051/0004-6361/201936214)

The erratum concerns Fig. 9 entitled "Antenna radio-electrical properties" for which some of the parameters are not correct. The new figure with new parameters is provided in Fig. 1 of this corrigendum. Fig. 1. Corrected Antenna radio-electrical properties. (Figure Presented)

APD photodetectors in the Geiger photon counter mode

International audienc

APD photodetectors in the Geiger photon counter mode.

International audienceThe best detector in Cerenkov experiments still remains the PM tube, thanks to its characteristics of sensitivity and speed. But its disadvantages are its low quantum efficiency and its cost. We are currently working on solid state silicon detectors, used in the Geiger photon counter mode. We have conducted a series of tests using standard APD, but with an electronic circuitry to raise the polarisation towards the Geiger mode. The photodiode is polarized over its own breakdown bias, one single photon passing through it may start an electron avalanche resulting in about 106 electrons collected. After that, the diode should recover as soon as possible to be available for the next photon. This process is under modelization: electrical diagrams (PSPICE), differential equations (VHDL-AMS) and components physics equations (SABER) are needed to reproduce closely the physical processes and to allow optimisation and improvement of the electronics both for triggering and for the readout of the detectors. Our most promising results will be presented

SiPM cryogenic operation down to 77 K

International audienceSilicon PhotoMultiplier (SiPM) is composed of extremely sensitive photosensors based on the Geiger Mode Avalanche PhotoDiode (GM-APD), which operate as a digital pixel sensitive to single photons. SiPMs are being considered for applications in low temperature environments, such as noble-liquid detectors for dark matter searches or neutrino physics and GM-APD is promising technology for space Compton telescopes. While it is well known that the dark count rate, one of the main limitations of SiPM, is reduced at low temperature, a detailed study of the behavior of the device in cryogenic environment is necessary to assess its performances. In this paper, we present measurements of static parameters as breakdown voltage and quenching resistance of a commercial SiPM (Hamamatsu MPPC S10362-11-100C). Evolution of these parameters as well as junction capacitance between room temperature and 77 K is discussed

APD photodetectors in the Geiger photon counter mode.

International audienceGeiger APD technology, which has been used for a few years now, is evolving towards better performances, including integration in multifunctional Microsystems; one such achievement is today the so-called SiPM [ref 1]. The present work has been conducted by a consortium of researchers from CESR and LAAS/CNRS and the manufacturing of components was achieved in the clean room of LAAS/CNRS. We present here an original N/P technology of photodiode, designed so as to offer a very good homogeneity in the electrical operating characteristics. For this, we have chosen a design and technological process which defines the breakdown voltage from the substrate doping. We present the technological process which we developed, in which we took a special care to maintain, by low transit temperature processes, at the highest quality level the initial characteristics of the materials. We will also present the performances of the diodes produced, with sizes ranging from 10 to 100µm, as a function of many parameters (gain, dark current, etc). We also produced SiPM, and also 8X8 arrays of SiPM. Typical characteristics for a single diode are a Vbr between 43V and 44V, and a dark current below 1 pA at ambient temperature. But the most important feature seems to be the high homogeneity of these performances all over the wafer surface. This gives us a great confidence in the next step of our work, which is the manufacturing of very high sensitivity imaging devices