The role of defects in the electrical properties of NbO2 thin film vertical devices

Epitaxial NbO2 thin films were grown on Si:GaN layers deposited on Al2O3 substrates using pulsed laser deposition. Pulsed current-voltage (IV) curves and self-sustained current oscillations were measured across a 31 nm NbO2 film and compared with a similar device made from polycrystalline NbO2 film grown on TiN-coated SiO2/Si substrate. Crystal quality of the as grown films was determined from x-ray diffractometry, x-ray photoelectron spectroscopy and atomic force microscopy data. The epitaxial film device was found to be more stable than the defect-rich polycrystalline sample in terms of current switching and oscillation behaviors

Erratum: "The role of defects in the electrical properties of NbO2 thin film vertical devices" [AIP Advances 6, 125006 (2016)]

We noticed that Figures 1, 2, and 4(a) in the original publication were of poor quality due to formatting issues. This erratum provides corrected versions of those figures. The original results and discussions were not affected. RHEED images in the inset to the Fig. 1 are now fully visible. Figure 2 shows now properly fitted frames for the AFM image with the correctly placed height scales. Figure 4(a) shows now a correctly presented block diagram for the effective measurement circuit

Magnetoelectric properties of 500-nm Cr2O3 films

The linear magnetoelectric effect was measured in 500-nm Cr2O3 films grown by radio frequency sputtering on Al2O3 substrates between top and bottom thin film Pt electrodes. Magnetoelectric susceptibility was measured directly by applying an alternating current (ac) electric field and measuring the induced ac magnetic moment using superconducting quantum interference device magnetometry. A linear dependence of the induced ac magnetic moment on the ac electric field amplitude was found. The temperature dependence of the magnetoelectric susceptibility agreed qualitatively and quantitatively with prior measurements of bulk single crystals, but the characteristic temperatures of the film were lower than those of single crystals. It was also possible to reverse the sign of the magnetoelectric susceptibility by reversing the sign of the magnetic field applied during cooling through the Néel temperature. A competition between total magnetoelectric and Zeeman energies is proposed to explain the difference between film and bulk Cr2O3 regarding the cooling field dependence of the magnetoelectric effect

Comparative study of the structural and optical properties of epitaxial CuFeO2 and CuFe1 - xGaxO2 delafossite thin films grown by pulsed laser deposition methods

Three samples of epitaxial delafossite CuFeO2 and CuFe1 − xGaxO2 films were grown using Pulsed Laser Deposition techniques in high vacuum. The sample thicknesses were estimated to be 21 nm, 75 nm for the CuFeO2 films and ~ 37 nm for the composite sample containing gallium. The estimated gallium fraction of substituted ferric atoms was x = 0.25 for the composite sample. We present the study of the fundamental band gap(s) for each sample via observation of their respective optical absorption properties in the NIR-VIS region using transmittance and diffuse reflection spectroscopy. Predominant absorption edges measured at 1.1 eV and 2.1 eV from transmittance spectra were observed for the CuFeO2 samples. The sample of CuFe1 − xGaxO2 showed a measurable shift to 1.5 eV of the lower band-gap and a strong absorption edge located at 2.3 eV attributed to direct band to band transitions. This study also found evidence of changes between apparent absorption edges between transmittance and diffuse reflectance spectroscopies of each sample and it may be resultant from absorption channels via surface states

STEM EBIC mapping of the metal-insulator transition in thin-film NbO2

STEM EBIC mapping of the metal-insulator transition in thin-film NbO

Search for the Magnetic Monopole at a Magnetoelectric Surface

We show, by solving Maxwell’s equations, that an electric charge on the surface of a slab of a linear magnetoelectric material generates an image magnetic monopole below the surface provided that the magnetoelectric has a diagonal component in its magnetoelectric response. The image monopole, in turn, generates an ideal monopolar magnetic field outside of the slab. Using realistic values of the electric and magnetic field susceptibilities, we calculate the magnitude of the effect for the prototypical magnetoelectric material Cr2O3. We use low-energy muon spin rotation to measure the strength of the magnetic field generated by charged muons as a function of their distance from the surface of a Cr2O3 film and show that the results are consistent with the existence of the monopole. We discuss other possible routes to detecting the monopolar field, and show that, while the predicted monopolar field generated by Cr2O3 is above the detection limit for standard magnetic force microscopy, the detection of the field using this technique is prevented by surface charging effects

Structural and electrical characterization of polycrystalline NbO2 thin film vertical devices grown on TiN-coated SiO2/Si substrates

We report on the electrical properties of polycrystalline NbO2 thin film vertical devices grown on TiN coated SiO2/Si substrates using pulsed laser deposition. First, we analyzed the thickness and contact size dependences of threshold switching of NbO2 films grown in 10 mTorr Ar/O2 mixed growth pressure, where 25.1%/74.9% of NbO2/Nb2O5 surface composition content was estimated by ex-situ x-ray photoelectron spectroscopy. Then the threshold switching and self-sustained current oscillatory behavior of films with different NbO2/Nb2O5 composition ratios was measured and analyzed. The current-voltage measurement revealed that the leakage current property in the insulating state was dominated by the trap-charge assisted Poole-Frankel conduction mechanism. All films showed threshold switching behavior in agreement with the previously proposed Joule heating mechanism. The second film was grown in lower (1 mTorr) growth pressure, which resulted in a higher (34.2%/65.8%) NbO2/Nb2O5 film surface composition. The film grown in higher growth pressure demonstrated lower off-state leakage current, faster switching, and self-sustained oscillations with higher frequency than the film grown in lower growth pressure

3D printing soft magnet: binder study for vat photopolymerization of ferrosilicon magnetic composites

Liquid Crystal Display (LCD) masking is a 3D printing technique that can produce soft magnetic composite parts to high resolution and complexity for robotics and energy electronics applications. This additive manufacturing technique has the potential to produce larger, lighter-weight, more efficient, and more durable parts for automotive and mechanical applications. This study conducted a binder study to create a low-viscosity and stiff binder capable of loading at least 60 v/v% Fe-6.5 wt%Si particles. Percolation Theory was applied to anticipate the magnetic interaction of suspended particles. A series of binders were formulated, with adjustments to diluent ratios. The behavior of the binders was assessed by studying their rheological properties, conversion rates, and mechanical properties. A post-cure study was conducted across various energy settings using UV, thermal, and a combination of both energy sources to find the combination that provided the best mechanical properties. As a result, 64 v/v% Fe-6.5 wt%Si loading was achieved and cured using UV light of 405 nm wavelength. Vibrating Sample Spectroscopy (VSM) was used to characterize the composite’s magnetic behavior, and a significant increase in saturation magnetization and negligible change in coercivity was observed when the added load exceeded the percolation threshold

3D printing soft magnet: binder study for vat photopolymerization of ferrosilicon magnetic composites

Liquid Crystal Display (LCD) masking is a 3D printing technique that can produce soft magnetic composite parts to high resolution and complexity for robotics and energy electronics applications. This additive manufacturing technique has the potential to produce larger, lighter-weight, more efficient, and more durable parts for automotive and mechanical applications. This study conducted a binder study to create a low-viscosity and stiff binder capable of loading at least 60 v/v% Fe-6.5 wt%Si particles. Percolation Theory was applied to anticipate the magnetic interaction of suspended particles. A series of binders were formulated, with adjustments to diluent ratios. The behavior of the binders was assessed by studying their rheological properties, conversion rates, and mechanical properties. A post-cure study was conducted across various energy settings using UV, thermal, and a combination of both energy sources to find the combination that provided the best mechanical properties. As a result, 64 v/v% Fe-6.5 wt%Si loading was achieved and cured using UV light of 405 nm wavelength. Vibrating Sample Spectroscopy (VSM) was used to characterize the composite’s magnetic behavior, and a significant increase in saturation magnetization and negligible change in coercivity was observed when the added load exceeded the percolation threshold

Weak ferromagnetism and short range polar order in NaMnF3 thin films

The orthorhombically distorted perovskite NaMnF3 has been predicted to become ferroelectric if an a = c distortion of the bulk Pnma structure is imposed. In order to test this prediction, NaMnF3 thin films were grown on SrTiO3 (001) single crystal substrates via molecular beam epitaxy. The best films were smooth and single phase with four different twin domains. In-plane magnetization measurements revealed the presence of antiferromagnetic ordering with weak ferromagnetism below the Néel temperature TN = 66 K. For the dielectric studies, NaMnF3 films were grown on a 30 nm SrRuO3 (001) layer used as a bottom electrode grown via pulsed laser deposition. The complex permittivity as a function of frequency indicated a strong Debye-like relaxation contribution characterized by a distribution of relaxation times. A power-law divergence of the characteristic relaxation time revealed an order-disorder phase transition at 8 K. The slow relaxation dynamics indicated the formation of super-dipoles (superparaelectric moments) that extend over several unit cells, similar to polar nanoregions of relaxor ferroelectrics