Mechanochemically Synthesized CIGS Nanocrystalline Powder for Solar Cell Application

Copper Indium Gallium Diselenide (CIGS) is a compound semiconductor material from the group of I-III-VI. The material is a solid solution of copper, indium and selenium (CIS) and copper, gallium and selenium with an empirical formula of CuIn(1 – x)GaxSe2, where 0 x 1. CIGS has an exceptionally high absorption coefficient of more than 105 cm – 1 for 1.5 eV. Solar cells prepared from absorber layers of CIGS materials have shown an efficiency higher than 20 %. CuIn(1 – x)GaxSe2 (x 0.3) nanocrystalline compound was mechanochemically synthesized by high-energy milling in a planetary ball mill. The phase identification and crystallite size of milled powders at different time intervals were carried out by X-ray diffraction (XRD). The XRD analysis indicates chalcopyrite structure and the crystallite size of about 10 nm of high-energy milled CIGS powder after two and half hours of milling. An attempt for preparing the thin film from CIGS nanocrystalline powder was carried out using the flash evaporation technique. Scanning electron microscopy (SEM) reveals uniform distribution of CIGS particles in thin film. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3100

Barrier inhomogeneities of Al/p-In2Te3 thin film Schottky diodes

The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-In2Te3/Al thin films Schottky diodes papered by Flash Evaporation technique were measured in the temperature range 303-335 K have been interpreted on the basis of the assumption of a Gaussian distribution of barrier heights (φbo) due to barrier height inhomogeneities that prevail at the interface. It has been found that the occurrence of Gaussian distribution of BHs is responsible for the decrease of the apparent BH (φbo) and increase of the ideality factor (η). The inhomogeneities are considered to have a Gaussian distribution with a mean barrier height of (φbm) and standard deviation (σs) at zero-bias. Furthermore, the activation energy value (φb) at T = 0 and Richardson constant (A**) value was obtained as 0.587 eV and 3.09 Acm– 2 K– 1 by means of usual Richardson plots. Hence, it has been concluded that the temperature dependence of the I-V characteristics of p-In2Te3/Al Schottky Diodes can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the BHs. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2790

Laser Induced Damage Studies on Al2O3, SiO2, and MgF2 Thin Films for Anti-Reflection Coating Application in High Power Laser Diode

The laser diode facet damage is one of the impeding factors of the high-power laser diode operation. To overcome this restriction laser diode facet coating can be utilized. During the high power operation of the laser diode, it is observed that the single layer anti reflection (AR) coating at the front facet shows optical damage while the multilayer high reflective coating at the back facet remains undamaged. To determine the “damage threshold” of the materials used for AR coating, an e-beam evaporated Al2O3, MgF2, and SiO2 single layer thin films on GaAs substrate have been optimized for the wavelength ~ 1060 nm. The diode pumped Q-switched Neodymium Yttrium Aluminum Garnet (Nd:YAG) laser (1064 nm) was used to da-mage the samples. The damage on the sample was observed under the microscope. The effective damage radius on the samples was 150 m and average continuous wave laser induced damage threshold was found 10 W. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3101

Magnetron sputtered Al-ZnO Thin films for photovoltaic applications

The optimization process of the RF magnetron sputtered Al - doped ZnO (AZO) thin films was carried out by studying its structural, optical, electrical, and morphological properties at different RF power and different working pressures for its use as a front-contact for the copper indium diselenide (CIS) based thin film solar cell. The structural study suggests that the preferred orientation of grains along the ( 002) plane having a hexagonal structure of the grains. The optical and electrical properties suggest that the films show an average transmission of 85 % and a resistivity of the order of 10-4 Wcm. The morphology analysis suggests the formation of packed grains having a homogeneous surface. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2210

Effect of substrate temperature on structural and morphological parameters of ZnTe thin films

Vacuum evaporated thin films of Zinc Telluride (ZnTe) of 5000 Å thickness have been deposited on glass substrates at different substrate temperatures (303 K, 373 K, 448 K). Structural parameters were obtained using XRD analysis. Atomic Force Microscope (AFM) in non-contact mode has been used to study the surface morphological properties of the deposited thin films. The results obtained from structural and surface morphological studies have been correlated and it is found that the films deposited at higher substrate temperatures possess increasingly good crystallinity and smoother surfaces. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/930

Laser scribing optimization of RF magnetron sputtered molybdenum thin films

The optimization process of laser scribing of back contacts is carried out by varying different parameters of laser and thickness of Molybdenum (Mo) thin-films. Mo thin films were deposited by RF magnetron sputtering on the organically cleaned soda lime glass substrate. The thickness of Mo was in the range of 60 nm to 800 nm. For the scribing process the laser power and the laser pulse frequency were varied. Different thickness of Mo shows the different scribe behavior. The optimized process provides a successful isolative laser scribing, having a minimum scribe line width, of Mo layer on glass substrate without any presence of walls, ridges, or collars in scribed areas. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/929

All-Solid-Thin Film Electrochromic Devices Consisting of Layers ITO / NiO / ZrO2 / WO3 / ITO

We have prepared an all-solid-thin film electrochromic device (ECD), consisting of layers ITO / NiO / ZrO2 / WO3 / ITO using the PVD method. The WO3 is used as an electrochromic layer, NiO as an ion-storage layer, and ZrO2 as a solid electrolyte layer in the all-solid-thin film ECD. The optical transmittance varied between 3-59 %. The device shows the coloration and bleaching time of 120 s and 2 s, respectively, with a good memory effect and desirable cycle-life. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3101

Threshold Behavior Of (gaal)as-gaas Lasers At Low Temperatures

The temperature dependence of the threshold current, differential quantum efficiency, and internal loss have been measured in the temperature range 10-293°K. The threshold current increases relatively slowly with temperature above 100°K and is independent of the impurity concentration. Theoretical calculation shows that this behavior is to be expected for a band-to-band transition that follows k selection. The threshold behavior at low temperatures (≤ 80°K) depends strongly on the type and concentration of the impurity. The relatively fast decrease in threshold below 100°K shows saturation for an active layer with n-type impurities or with high-concentration p-type impurities. The saturation is attributed to the carrier diffusion length becoming smaller than the active-layer thickness. The internal differential quantum efficiency is near unity and is independent of temperature. The internal loss, however, decreases with temperature due to reduction in free-carrier absorption.491293

The Effect Of Draw-Up Volume On The Accuracy Of Electrolyte Measurements From Neonatal Arterial Lines

Objectives: Contamination by infusate of blood samples withdrawn from arterial lines has been recognized but not well documented for neonates. The aim of this study was to investigate, using in vitro and in vivo studies, the effects of different draw-up volumes (withdrawn from the line prior to the sample being taken) on the concentration of sodium. Methods: In-vitro study: The tip of an umbilical artery catheter (dead space 0.6 mL), infused with half normal saline containing 1 unit/mL of heparin was placed in a beaker of normal saline. The line was flushed with 1 mL of this infusate just before each sample was taken. Volumes from 0.5 mL to 2.0 mL of infusate/normal saline were withdrawn in 0.1 mL increments from a three-way tap and discarded. A sample was then taken from the line into a blood gas syringe for analysis of the sodium concentration by the 860 Blood Gas Analyzer (Chiron Diagnostics, Bayer, Scoresby). Control samples were taken from the beaker. In-vivo study: A 22 gauge intravenous catheter was inserted into a vein of an adult male volunteer. The dead space was also 0.6 mL. The line was flushed with 5 mL of half-normal saline immediately before sampling. Draw-up volumes of 0.6, 0.9, 1.3, and 1.6 mL were withdrawn and discarded. 10 mL was used as a control. A 0.5-mL blood sample was then taken and the electrolyte concentrations analysed immediately. Results: In-vitro: A minimum draw-up volume of 1.3 mL was required before the sodium concentration was not significantly different from the control samples. In-vivo: A minimum draw-up volume of 1.6 mL was required before the sodium concentration was not significantly different from the control samples. There were similar trends in the effect of draw-up volume for glucose, calcium, potassium, chloride and lactate. Conclusion: A minimum volume of 1.6 mL should be withdrawn from neonatal arterial lines (dead space 0.6 mL) before taking blood for analysi

Mechanochemically Synthesized CIGS Nanocrystalline Powder for Solar Cell Application

Copper Indium Gallium Diselenide (CIGS) is a compound semiconductor material from the group of I-III-VI. The material is a solid solution of copper, indium and selenium (CIS) and copper, gallium and selenium with an empirical formula of CuIn(1 – x)GaxSe2, where 0 x 1. CIGS has an exceptionally high absorption coefficient of more than 105 cm – 1 for 1.5 eV. Solar cells prepared from absorber layers of CIGS materials have shown an efficiency higher than 20 %. CuIn(1 – x)GaxSe2 (x 0.3) nanocrystalline compound was mechanochemically synthesized by high-energy milling in a planetary ball mill. The phase identification and crystallite size of milled powders at different time intervals were carried out by X-ray diffraction (XRD). The XRD analysis indicates chalcopyrite structure and the crystallite size of about 10 nm of high-energy milled CIGS powder after two and half hours of milling. An attempt for preparing the thin film from CIGS nanocrystalline powder was carried out using the flash evaporation technique. Scanning electron microscopy (SEM) reveals uniform distribution of CIGS particles in thin film. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3100