115 research outputs found
Accurately modeling of Zero Biased Schottky-Diodes at millimeter-wave frequencies
This paper presents and discusses the careful modeling of a Zero Biased Diode, including low-frequency noise sources, providing a global model compatible with both wire bonding and flip-chip attachment techniques. The model is intended to cover from DC up to W-band behavior, and is based on DC, capacitance versus voltage, as well as scattering and power sweep harmonics measurements. Intensive use of 3D EM (ElectroMagnetic) simulation tools, such as HFSSTM, was done to support Zero Biased Diode parasitics modeling and microstrip board modeling. Measurements are compared with simulations and discussed. The models will provide useful support for detector designs in the W-band.This research was funded by the Spanish Ministry of Economy, Science and Innovation for the financial support provided through projects CONSOLIDER-INGENIO CSD2008-00068 (TERASENSE), the continuing excellence network SPATEK and the projects TEC2014-58341-C4-1-R and TEC2017-83343-C4-1-R
Characterization and modeling of Schottky diodes up to 110 GHz for use in both flip-chip and wire-bonded assembled environments
This paper presents a wideband model, from Direct Current (DC) to W band, for a single Anode Schottky Diode based on a commercial VDI chip. Different measurements have been performed to obtain a complete large-signal equivalent circuit model suitable for the device under consideration up to 110 GHz, and for its integration in planar circuits. The modeling has been done using a combination of DC, capacitance measurements, and RF scattering measurements. The test structure for on-wafer S-parameter characterization has been developed to obtain an equivalent circuit for Coplanar to Microstrip (CPW-Microstrip) transitions, then verified with 3D Electromagnetic (EM) tools and finally used to de-embed device measurements from empirical data results in W band. 3D EM simulation of the diodes was used to initialize the parasitic parameters. Those significant extrinsic elements were combined with the intrinsic elements. The results show that the proposed method is suitable to determine parameters of the diode model with an excellent fit with measurements. Using this model, the simulated performance for a number of diode structures has given accurate predictions up to 110 GHz. Some anomalous phenomena such as parasitic resistance dependence on frequency have been found.The authors would like to thank the Spanish Ministries of Science and Innovation (MICINN) and of Economy and Competitiveness (MINECO) for the financial support provided through projects CSD2008-00068, TEC2011-29264-C03-01 and FEDER co-funded TEC2011-29126-C03-01. The authors express their gratitude to the Spanish Agency AECI though its program ‘Becas para Extranjeros No Iberoamericanos para Estudios de Postgrado, Doctorado y Postdoctorado en Universidades y Centros Superiores en España’
Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement
This paper presents and discusses several methods for predicting the low-frequency (LF) noise at the output of a mm-wave detector. These methods are based on the extraction of LF noise source parameters from the single diode under a specific set of bias conditions and the transfer or conversion of these noise sources, under different operating conditions including cyclostationary regime, to the quasi-dc output of a mm-wave detector constructed with the same model of diode. The noise analysis is based on a conversion-matrix type formulation, which relates the carrier noisy sidebands of the input signal with the detector output spectrum through a pair of transfer functions obtained in commercial software. Measurements of detectors in individual and differential setups will be presented and compared with predictions.The authors would like to thank the Spanish Ministry of Science and Innovation (MICINN) for the financial support provided through projects TEC2011-29264-C03-01, CONSOLIDER-INGENIO CSD2008-00068 (TERASENSE), TEC2014-58341-C4-1-R, FEDER co-funding, CONSOLIDER-INGENIO CSD2010-00064 and the University of Cantabria Industrial Doctorate programme 2014, project: “Estudio y Desarrollo de Tecnologías para Sistemas de Telecomunicación a Frecuencias Milimétricas y de Terahercios con Aplicación a Sistemas de Imaging en la Banda 90–100 GHz”
Caracterización de transiciones coplanar-Microstrip en banda W
Characterization and modelling of devices, in
particular diodes, in W band becomes a complex task due to the
difficulties to de-embed parasitic effects of the access elements.
We present a CAD model developed for two CPW-Microstrip
transitions connected with a bond wire. It will be used to deembed
device measurements from empirical data results when
using a commercial calibration substrate with measurement
reference planes at the probe tips, which not includes CPW to
microstrip transitions in the standards neither wire bonds. The
Interface Model has been verified by comparing measurements
and two types of simulations (3D EM and circuital physicallybased)
of the CPW_Micorstrip- bond_wire-CPW_Microstrip
W-Band linear array of planar antennas and chiral metamaterial cover
This work presents the development of a W-band planar antenna array, starting from the study of a single element, evaluating the effect of a chiral cover on it, then incrementing to the design, fabrication and measurements of a W-band linear array of three planar antennas. Each radiating element is a patch fed by slots. This technology is cheap and affordable. Simulation fits quite well with measurements. Metamaterial may enhance the radiation properties, particularly, the directivity. The chiral metamaterial cover is made of two layers of mutually twisted planar metal rosettes in parallel planes.The authors would like to thank to Sandra Pana for the fabricated samples of the available prototype and to Dermot Erskine for the correction of the text. This work has been partially supported by the MINECO of Spanish Government through the Research Projects CONSOLIDER CSD2008-00068 and CSD2008- 00066, FEDER co-funded TEC2011-29126-C03- 01, TEC2011-29264-C03-01 and TEC2010- 21496-C03-01
Comparison of microstrip w-band detectors based on zero bias schottky-diodes
This paper presents and discusses three different low-cost microstrip implementations of Schottky-diode detectors in W Band, based on the use of the Zero Bias Diode (ZBD) from VDI (Virginia Diodes, Charlottesville, VA, USA). Designs are based on a previous work of modeling of the ZBD diode. Designs also feature low-cost, easy-to-use tooling substrates (RT Duroid 5880, 5 mils thickness) and even low-cost discrete SMD components such as SOTA resistances (State Of The Art TM miniaturized surface mount resistors), which are modeled to be used well above commercial frequency margins. Intensive use of 3D EM simulation tools such as HFSS TM is done to support microstrip board modeling. Measurements of the three designs fabricated are compared to simulations and discussed.The authors would like to thank the funding of the University of Cantabria Industrial Doctorate programme 2014, project: “Estudio y Desarrollo de Tecnologías para Sistemas de Telecomunicación a Frecuencias Milimétricas y de Terahercios con Aplicación a Sistemas de Imaging en la Banda 90 GHz–100GHz” and the Spanish Ministry of Economy, Science and Innovation for the financial support provided through projects CONSOLIDER-INGENIO CSD2008-00068 (TERASENSE), the continuing excellence network SPATEK and the projects TEC2014-58341-C4-1-R, TEC2017-83343-C4-1-R. and AYA2017-92153-EXP
Caracterización de componentes y balance de potencia para radiómetro en banda W
Based on the measurements of several gain and detection W band modules, different topologies of total power radiometer in W band are presented and compared in terms of effective bandwidth and sensitivity. Commercially available MMICs have been on wafer characterized. Measured Data are used in a simulation procedure to emulate in harmonic balance the application of wideband noise. Technological issues of the implementation like interconnections between MMICs and planar lines are addressed
Design and fabrication of a W-band linear array of planar antennas and study for the enhancement of its radiation properties with a chiral metamaterial cover
This work presents the design, fabrication and measurements of a W-band linear array of planar antennas. The structure of the antenna, which presents as benefit low cost and easy manufacture, is composed of three planar patches fed by slots. The simulation and the experimental results are compared showing a good agreement. In order to enhance the radiation properties, a chiral metamaterial cover is added to the antenna array. The chiral meta material cover is formed by two layers of mutually twisted planar metal rosettes in parallel planes and it is expected to enhance the directivity of the antenna array.This work has been partially supported by the MINECO of Spanish Government through the Research Projects CONSOLlDER CSD2008-00068 and CSD2008-00066, FEDER co-funded TEC2011-29126-C03-01 and TEC2010-21496-C03-0
Detectores con Diodos Zero Bias (ZBD) para banda W
Increasing demand for applications in W band has pushed the development of technologies for generation, mixing and detection of RF signals in these bands. Particularly, high performance diodes specially developed to operate at zero bias are well suited for detection. Modeling of Zero Biased Diodes (ZBD) manufactured by Virginia Diodes is presented and then applied to the design of a detector. Different configurations have been used to mount the diodes (flip-chip, and wire-bonded) requiring a careful de-embedding. Several versions of the detector have been implemented, measured, and compared with simulations done with the previously obtained diode model, showing the most critical points of the detector development.Los autores agradecen la financiación recibida del Ministerio de Economía y Competitividad por el Proyecto TEC2014-58341-C4-1-R y por la Red Excelencia CONSOLIDER-SPATEK
Microstrip broadband thin-film attenuators without via-hole-ground at millimeter wave frequencies
A comprehensive design methodology for microstrip broadband attenuators is presented. Closed-form design equations are given for two types of distributed attenuators. The attenuators are based on a cascade connection of thin-film resistors and microstrip line sections. The structure provides maximally flat attenuation and wideband performance without the need of plated via holes to ground, facilitating manufacture as well as achieving proper performance at millimeter wave frequencies. Experimental results demonstrate the validity of the technique applied to 3 dB and 13 dB broadband attenuators on aluminasubstrate up to 67 GHz. The proposed topology can be applied not only to MIC, but also to MMIC designs at the highest frequencies.This work was supported by the Spanish Ministry of Economy and Competitiveness mainly under Grant ESP2015-70646-C2-2-R and additionally under Grant TEC2017-83343-C4-1-R, and Ministry of Science, Innovation and Universities under Grant AYA2017-92153-EXP. The authors thank Eva Cuerno for her assistance during the attenuators assembly
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