82 research outputs found
Morphology and development of the Cape Tribulation fringing reefs, Great Barrier Reef, Australia
on the reef crest and most of the back reef ceased approximately5400 years before present, probably in response to increasing
turbidity and water quality deterioration as fine sediments accumulated offshore and became resuspended during strong winds.
Significant coral growth is now restricted to the subtidal fore reef but reef progradation has been minimal over the last 5000 years.The height of the reef crests relative to present day sea level and the absence of low magnesian calcite cements in the fringing
reefs suggest that they have not been subjected to extensive subaerial exposure, with a maximum Holocene relative sea level
of only 0.6 to 1.0 m above its present position being responsible for the height of the present algal covered reef crest.
The fringing reefs can be divided into four lithologic assemblages:
i) a fluvial gravel basement deposited as alluvial fans from the steeply sloping hinterland
ii) a lower framestone unit
iii) a detrital assemblage and
iv) an upper framestone-bandstone unit
Measurements of the extinction parameters of hot seeded hydrogen at high pressures
Measurement of extinction parameter of tungsten-hydrogen aerosols as function of wavelength at high pressures and temperature
Resource Management in Diffserv On DemAnd (RODA) PHR
The purpose of this draft is to present the Resource Management in Diffserv (RMD) On DemAnd (RODA) Per Hop Reservation (PHR) protocol. The RODA PHR protocol is used on a per-hop basis in a Differentiated Services (Diffserv) domain and extends the Diffserv Per Hop Behavior (PHB) with resource provisioning and control
The 25 percent-efficient GaAs Cassegrainian concentrator cell
Very high-efficiency GaAs Cassegrainian solar cells have been fabricated in both the n-p and p-n configurations. The n-p configuration exhibits the highest efficiency at concentration, the best cells having an efficiency eta of 24.5 percent (100X, AM0, temperature T = 28 C). Although the cells are designed for operation at this concentration, peak efficiency is observed near 300 suns (eta = 25.1 percent). To our knowledge, this is the highest reported solar cell efficiency for space applications. The improvement in efficiency over that reported at the previous SPRAT conference is attributed primarily to lower series resistance and improved grid-line plating procedures. Using previously measured temperature coefficients, researchers estimate that the n-p GaAs cells should deliver approximately 22.5 percent efficiency at the operating conditions of 100 suns and T = 80 C. This performance exceeds the NASA program goal of 22 percent for the Cassegrainian cell. One hundred Cassegrainian cells have been sent to NASA as deliverables, sixty-eight in the n-p configuration and thirty-two in the p-n configuration
Progress toward a 30 percent-efficient, monolithic, three-junction, two-terminal concentrator solar cell for space applications
Component efficiencies of 0.2/sq cm cells at approximately 100x AMO light concentration and 80 C temperatures are not at 15.3 percent for a 1.9 eV AlGaAs top cell, 9.9 percent for a 1.4 eV GaAs middle cell under a 1.9 eV AlGaAs filter, and 2.4 percent for a bottom 1.0 eV InGaAs cell under a GaAs substrate. The goal is to continue improvement in these performance levels and to sequentially grow these devices on a single substrate to give 30 percent efficient, monolithic, two-terminal, three-junction space concentrator cells. The broad objective is a 30 percent efficient monolithic two-terminal cell that can operate under 25 to 100x AMO light concentrations and at 75 to 100 C cell temperatures. Detailed modeling predicts that this requires three junctions. Two options are being pursued, and both use a 1.9 eV AlGaAs top junction and a 1.4 eV GaAs middle junction grown by a 1 atm OMVPE on a lattice matched substrate. Option 1 uses a low-doped GaAs substrate with a lattice mismatched 1.0 eV InGaAs cell formed on the back of the substrate. Option 2 uses a Ge substrate to which the AlGaAs and GaAs top junctions are lattice matched, with a bottom 0.7 eV Ge junction formed near the substrate interface with the GaAs growth. The projected efficiency contributions are near 16, 11, and 3 percent, respectively, from the top, middle, and bottom junctions
Resource Management in Diffserv (RMD) Framework
This draft presents the work on the framework for the Resource Management in Diffserv (RMD) designed for edge-to-edge resource reservation in a Differentiated Services (Diffserv) domain. The RMD extends the Diffserv architecture with new resource reservation concepts and features. Moreover, this framework enhances the Load Control protocol described in [WeTu00].\ud
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The RMD framework defines two architectural concepts:\ud
- the Per Hop Reservation (PHR)\ud
- the Per Domain Reservation (PDR)\ud
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The PHR protocol is used within a Diffserv domain on a per-hop basis to augment the Diffserv Per Hop Behavior (PHB) with resource reservation. It is implemented in all nodes in a Diffserv domain. On the other hand, the PDR protocol manages the resource reservation per Diffserv domain, relying on the PHR resource reservation status in all nodes. The PDR is only implemented at the boundary of the domain (at the edge nodes).\ud
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The RMD framework presented in this draft describes the new reservation concepts and features. Furthermore it describes the:\ud
- relationship between the PHR and PHB\ud
- interaction between the PDR and PHR\ud
- interoperability between the PDR and external resource reservation schemes\ud
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This framework is an open framework in the sense that it provides the basis for interoperability with other resource reservation schemes and can be applied in different types of networks as long as they are Diffserv domains. It aims at extreme simplicity and low cost of implementation along with good scaling properties
Resource management in Diffserv measurement-based admission control PHR
The purpose of this draft is to present the Resource Management in Diffserv (RMD) Measurement-Based Admission Control (RIMA) Per Hop Reservation (PHR) protocol. The RIMA PHR protocol is used on a per-hop basis in a Differentiated Services (Diffserv) domain and extends the Diffserv Per Hop Behavior (PHB) with Measurement-based Admission Control features
Worker/wrapper/makes it/faster
Much research in program optimization has focused on formal approaches to correctness: proving that the meaning of programs is preserved by the optimisation. Paradoxically, there has been comparatively little work on formal approaches to efficiency: proving that the performance of optimized programs is actually improved. This paper addresses this problem for a general-purpose optimization technique, the worker/wrapper transformation. In particular, we use the call-by-need variant of improvement theory to establish conditions under which the worker/wrapper transformation is formally guaranteed to preserve or improve the time performance of programs in lazy languages such as Haskell
Ultrafast Hole Trapping and Relaxation Dynamics in p-Type CuS Nanodisks
CuS nanocrystals are potential materials for developing low-cost solar energy conversion devices. Understanding the underlying dynamics of photoinduced carriers in CuS nanocrystals is essential to improve their performance in these devices. In this work, we investigated the photoinduced hole dynamics in CuS nanodisks (NDs) using the combination of transient optical (OTA) and X-ray (XTA) absorption spectroscopy. OTA results show that the broad transient absorption in the visible region is attributed to the photoinduced hot and trapped holes. The hole trapping process occurs on a subpicosecond time scale, followed by carrier recombination (~100 ps). The nature of the hole trapping sites, revealed by XTA, is characteristic of S or organic ligands on the surface of CuS NDs. These results not only suggest the possibility to control the hole dynamics by tuning the surface chemistry of CuS but also represent the first time observation of hole dynamics in semiconductor nanocrystals using XTA
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