Pacific Ocean Forcing and Atmospheric Variability are the Dominant Causes of Spatially Widespread Droughts in the Contiguous United States

The contributions of oceanic and atmospheric variability to spatially widespread summer droughts in the contiguous United States (hereafter, pan-CONUS droughts) are investigated using 16-member ensembles of the Community Climate Model version 3 (CCM3) forced with observed sea surface temperatures (SSTs) from 1856 to 2012. The employed SST forcing fields are either (i) global or restricted to the (ii) tropical Pacific or (iii) tropical Atlantic to isolate the impacts of these two ocean regions on pan-CONUS droughts. Model results show that SST forcing of pan-CONUS droughts originates almost entirely from the tropical Pacific because of atmospheric highs from the northern Pacific to eastern North America established by La Nia conditions, with little contribution from the tropical Atlantic. Notably, in all three model configurations, internal atmospheric variability influences pan-CONUS drought occurrence by as much or more than the ocean forcing and can alone cause pan-CONUS droughts by establishing a dominant high centered over the US montane West. Similar results are found for the Community Atmosphere Model version 5 (CAM5). Model results are compared to the observational record, which supports model-inferred contributions to pan-CONUS droughts from La Nias and internal atmospheric variability. While there may be an additional association with warm Atlantic SSTs in the observational record, this association is ambiguous due to the limited number of observed pan-CONUS. The ambiguity thus opens the possibility that the observational results are limited by sampling over the 20th-century and not at odds with the suggested dominance of Pacific Ocean forcing in the model ensembles

Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors

The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework the spin-orbit Stark parameters are computed for donors in multi-valley semiconductors, silicon and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate induced transition from 3D to 2D wave function confinement show that the corresponding g-factor shift in Si is experimentally observable.Comment: 4 pages, 4 figure

Atomistic simulations of adiabatic coherent electron transport in triple donor systems

A solid-state analogue of Stimulated Raman Adiabatic Passage can be implemented in a triple well solid-state system to coherently transport an electron across the wells with exponentially suppressed occupation in the central well at any point of time. Termed coherent tunneling adiabatic passage (CTAP), this method provides a robust way to transfer quantum information encoded in the electronic spin across a chain of quantum dots or donors. Using large scale atomistic tight-binding simulations involving over 3.5 million atoms, we verify the existence of a CTAP pathway in a realistic solid-state system: gated triple donors in silicon. Realistic gate profiles from commercial tools were combined with tight-binding methods to simulate gate control of the donor to donor tunnel barriers in the presence of cross-talk. As CTAP is an adiabatic protocol, it can be analyzed by solving the time independent problem at various stages of the pulse - justifying the use of time-independent tight-binding methods to this problem. Our results show that a three donor CTAP transfer, with inter-donor spacing of 15 nm can occur on timescales greater than 23 ps, well within experimentally accessible regimes. The method not only provides a tool to guide future CTAP experiments, but also illuminates the possibility of system engineering to enhance control and transfer times.Comment: 8 pages, 5 figure

Elevated intracellular cAMP exacerbates vulnerability to oxidative stress in optic nerve head astrocytes.

Glaucoma is characterized by a progressive loss of retinal ganglion cells and their axons, but the underlying biological basis for the accompanying neurodegeneration is not known. Accumulating evidence indicates that structural and functional abnormalities of astrocytes within the optic nerve head (ONH) have a role. However, whether the activation of cyclic adenosine 3',5'-monophosphate (cAMP) signaling pathway is associated with astrocyte dysfunction in the ONH remains unknown. We report here that the cAMP/protein kinase A (PKA) pathway is critical to ONH astrocyte dysfunction, leading to caspase-3 activation and cell death via the AKT/Bim/Bax signaling pathway. Furthermore, elevated intracellular cAMP exacerbates vulnerability to oxidative stress in ONH astrocytes, and this may contribute to axonal damage in glaucomatous neurodegeneration. Inhibition of intracellular cAMP/PKA signaling activation protects ONH astrocytes by increasing AKT phosphorylation against oxidative stress. These results strongly indicate that activation of cAMP/PKA pathway has an important role in astrocyte dysfunction, and suggest that modulating cAMP/PKA pathway has therapeutic potential for glaucomatous ONH degeneration

Orbital Stark effect and quantum confinement transition of donors in silicon

Adiabatic shuttling of single impurity bound electrons to gate induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport spectroscopy experiment for the first time was able to probe the Stark shifted spectrum of a single donor in silicon buried close to a gate. Here we present the full theoretical model involving large-scale quantum mechanical simulations that was used to compute the Stark shifted donor states in order to interpret the experimental data. Use of atomistic tight-binding technique on a domain of over a million atoms helped not only to incorporate the full band structure of the host, but also to treat realistic device geometries and donor models, and to use a large enough basis set to capture any number of donor states. The method yields a quantitative description of the symmetry transition that the donor electron undergoes from a 3D Coulomb confined state to a 2D surface state as the electric field is ramped up adiabatically. In the intermediate field regime, the electron resides in a superposition between the states of the atomic donor potential and that of the quantum dot like states at the surface. In addition to determining the effect of field and donor depth on the electronic structure, the model also provides a basis to distinguish between a phosphorus and an arsenic donor based on their Stark signature. The method also captures valley-orbit splitting in both the donor well and the interface well, a quantity critical to silicon qubits. The work concludes with a detailed analysis of the effects of screening on the donor spectrum.Comment: 10 pages, 10 figures, journa

Mapping donor electron wave function deformations at sub-Bohr orbit resolution

Quantum wave function engineering of dopant-based Si nano-structures reveals new physics in the solid-state, and is expected to play a vital role in future nanoelectronics. Central to any fundamental understanding or application is the ability to accurately characterize the deformation of the electron wave functions in these atom-based structures through electromagnetic field control. We present a method for mapping the subtle changes that occur in the electron wave function through the measurement of the hyperfine tensor probed by 29Si impurities. Our results show that detecting the donor electron wave function deformation is possible with resolution at the sub-Bohr radius level.Comment: 4 pages, 3 figures, and 1 tabl

Two-Dimensional Diffusion in the Presence of Topological Disorder

How topological defects affect the dynamics of particles hopping between lattice sites of a distorted, two-dimensional crystal is addressed. Perturbation theory and numerical simulations show that weak, short-ranged topological disorder leads to a finite reduction of the diffusion coefficient. Renormalization group theory and numerical simulations suggest that longer-ranged disorder, such as that from randomly placed dislocations or random disclinations with no net disclinicity, leads to subdiffusion at long times.Comment: 10 pages, 6 figure