Low temperature and radiation stability of flexible IGZO TFTs and their suitability for space applications

In this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 1012 e-/cm2 and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e- irradiation are found to shift by +0.09 ± 0.05V and -0.6 ± 0.5cm2 V-1 s-1. Subsequent low temperature exposure resulted in additional shifts of +0.38 V and -5.95 cm2 V-1 s-1 for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems’ design, these devices can be used to unobtrusively integrate sensor systems into space-suits

Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices

The insertion of a metal layer between an active electrode and a switching layer leads to the formation of a ternary oxide at the interface. The properties of this self-formed oxide are found to be dependent on the Gibbs free energy of oxide formation of the metal (ΔGf°). We investigated the role of various ternary oxides in the switching behavior of conductive bridge random access memory (CBRAM) devices. The ternary oxide acts as a barrier layer that can limit the mobility of metal cations in the cell, promoting stable switching. However, too low (higher negative value) ΔGf° leads to severe trade-offs; the devices require high operation current and voltages to exhibit switching behavior and low memory window (on/off) ratio. We propose that choosing a metal layer having appropriate ΔGf° is crucial in achieving reliable CBRAM devices

Fully Reversible Electrically Induced Photochromic-Like Behaviour of Ag:TiO2 Thin Films

A TiO2 thin film, prepared on fluorine-doped indium tin oxide (FTO)-coated glass substrate, from commercial off-the-shelf terpinol-based paste, was used to directly adsorb Ag plasmonic nanoparticles capped with polyvinylpyrollidone (PVP) coating. The TiO2 film was sintered before the surface entrapment of Ag nanoparticles. The composite was evaluated in terms of spectroelectrochemical measurements, cyclic voltammetry as well as structural methods such as scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). It was found that the Ag nanoparticles are effectively adsorbed on the TiO2 film, while application of controlled voltages leads to a fully reversible shift of the plasmon peak from 413 nm at oxidation inducing voltages to 440 nm at reducing voltages. This phenomenon allows for the fabrication of a simple photonic switch at either or both wavelengths. The phenomenon of the plasmon shift is due to a combination of plasmon shift related to the form and dielectric environment of the nanoparticles

Flexible Oxide Thin Film Transistors, Memristors, and Their Integration

Flexible electronics have seen extensive research over the past years due to their potential stretchability and adaptability to non-flat surfaces. They are key to realizing low-power sensors and circuits for wearable electronics and Internet of Things (IoT) applications. Semiconducting metal-oxides are a prime candidate for implementing flexible electronics as their conformal deposition methods lend themselves to the idiosyncrasies of non-rigid substrates. They are also a major component for the development of resistive memories (memristors) and as such their monolithic integration with thin film electronics has the potential to lead to novel all-metal-oxide devices combining memory and computing on a single node. This review focuses on exploring the recent advances across all these fronts starting from types of suitable substrates and their mechanical properties, different types of fabrication methods for thin film transistors and memristors applicable to flexible substrates (vacuum- or solution-based), applications and comparison with rigid substrates while additionally delving into matters associated with their monolithic integration.</p

Electron Transporting Perylene Diimide-Based Random Terpolymers with Variable Co-Monomer Feed Ratio: A Route to All-Polymer-Based Photodiodes

A route toward processable n-type terpolymers is presented herein based on the random donor-acceptor-donor-acceptor (D-A1)-(D-A2) molecular configuration. Carbazole is utilized as the electron donating unit (D) combined with perylene diimide (PDI) as the first electron acceptor (A1) and either one of two different benzothiadiazole (BTZ) derivatives (di-thienyl substituted-BTZ and di-3,4-ethylenedioxythienyl substituted-BTZ) as the second electron accepting unit (A2). Increasing the content of the PDI co-monomer resulted in terpolymers of higher molecular weights, enhanced solubility, and stronger n-type character. The physicochemical properties of the random PDI-Cz-BTZ derivatives are fine-tuned based on the feed ratio of the co-monomers. Photodiode devices were demonstrated, having photoactive layers composed of the rich in PDI terpolymer, namely, P4 having a 75% PDI content, and the PCE10 electron donor, under various ratios. For a range of P4 blend compositions, UV-Vis, is spectroscopy confirmed the strong absorption of the blend films across the 350-800 nm spectral region, and AFM imaging verified their low surface roughness. The study of the electro-optical device properties identified the 1:2 blending ratio as the optimum PCE10:P4 combination for maximum charge photogeneration efficiency. Despite the relatively deep LUMO energy of the n-type P4 terpolymer (ELUMO = -4.04 eV), trap-induced charge recombination losses were found to limit the PCE10:P4 photodiode performance. Unipolar devices of the P4-alone exhibited hole and electron mobility values of 2.2 × 10-4 and 6.3 × 10-5 cm2 V-1 s-1, respectively

In Situ Generation of n‐Type Dopants by Thermal Decarboxylation

International audienceMolecular doping is a powerful and increasingly popular approach toward enhancing electronic properties of organic semiconductors (OSCs) past their intrinsic limits. The development of n‐type dopants has been hampered, however, by their poor stability and high air‐reactivity, a consequence of their generally electron rich nature. Here, the use of air‐stable carboxylated dopant precursors is reported to overcome this challenge. Active dopants are readily generated in solution by thermal decarboxylation and applied in n‐type organic field‐effect transistors (OFETs). Both 1,3‐dimethylimidazolium‐2‐carboxylate (CO 2 ‐DMI) and novel dopant 1,3‐dimethylbenzimidazolium‐2‐carboxylate (CO 2 ‐DMBI) are applied to n‐type OFETs employing well‐known organic semiconductors (OSCs) P(NDI2OD‐T2), PCBM, and O‐IDTBR. Successful improvement of performance in all devices demonstrates the versatility of the dopants across a variety of OSCs. Experimental and computational studies indicate that electron transfer from the dopant to the host OSC is preceded by decarboxylation of the precursor, followed by dimerization to form the active dopant species. Transistor studies highlight CO 2 ‐DMBI as the most effective dopant, improving electron mobility by up to one order of magnitude, while CO 2 ‐DMI holds the advantage of commercial availability

Doping-induced decomposition of organic semiconductors: a caveat to the use of Lewis acid p-dopants

Solution-processable molecular dopants are popular wet-lab mediators to engineer the electronic properties of organic semiconductors and to optimize the level performance of their corresponding devices. Nonetheless, the exact doping mechanism that is operative during the interaction of organic semiconductors with Lewis acid species is not fully elaborated. The products of the doping reactions between Lewis acids and organic semiconductors have not been studied in detail. Here we focus on the macromolecular poly[bis(4-phenyl)(2,4-dimethylphenyl)]amine (PTAA) and molecular fluorinated anthradithiophene (diF-TES-ADT) organic semiconductors for addressing their chemical integrity after p-doping by the tris(pentafluorophenyl) borane [B(C6F5)3] Lewis acid agent. The PTAA and diF-TES-ADT organic substrates are studied in mixtures with B(C6F5)3 at three discrete concentration regimes. In the dilute solution regime, UV-Vis absorption spectroscopy verifies the effectiveness of p-doping by the changes observed in the absorption spectra of the solutions at increased B(C6F5)3 content. In the concentrated solution regime, the reactivity of B(C6F5)3 with PTAA and diF-TES-ADT is monitored by proton nuclear magnetic resonance (1H-NMR) and electrospray ionization mass spectroscopy (ES-MS), as well as thin-layer chromatography (TLC). Finally, in the solid-state the photophysical properties of spin-coated PTAA:B(C6F5)3 and diF-TES-ADT:B(C6F5)3 films are examined as a function of their B(C6F5)3 content. Density functional theory (DFT) calculations corroborate the experimental findings. Both theoretical and experimental results exclude the formation of Lewis adduct species in the PTAA:B(C6F5)3 and diF-TES-ADT:B(C6F5)3 systems. In agreement with recent literature, the B(C6F5)3 reactivity is attributed to the Brønsted-type acidity of the hydrated B(C6F5)3-OH2 complex that induces p-doping via the protonation of the organic substrates. The formation of the B(C6F5)3-OH2 acidic agent is identified experimentally by its characteristic 1H-NMR signal at 4.7 ppm. All results for the three concentration regimes provide evidence for the occurrence of PTAA and diF-TES-ADT decomposition in the presence of B(C6F5)3. At high B(C6F5)3 loadings, ES-MS spectroscopy and TLC analysis suggest that B(C6F5)3 remains unreacted, revealing the catalytic role in the decomposition process of PTAA and diF-TES-ADT. The results suggest that after interacting with Lewis acids, organic semiconductors may undergo detrimental decomposition reactions. This potentially undesired chemical reactivity should be considered for evaluating the operation stability of the p-doped electronic devices

Publisher Correction: Deciphering photocarrier dynamics for tuneable high-performance perovskite-organic semiconductor heterojunction phototransistors

An amendment to this paper has been published and can be accessed via a link at the top of the paper