Breakdown transients in high-k multilayered MOS stacks: Role of the oxide-oxide thermal boundary resistance

In this work, breakdown transients of multilayered gate oxide stacks were analyzed to study the impact of the interfaces between oxides on the heat dissipation considering an electromigration-based progressive breakdown model. Using two distinct measurement setups on four different sets of samples, featuring two layers and three layers of Al 2 O 3 and HfO 2 interspersed, the breakdown transients were captured and characterized in terms of the degradation rate. Experimental results show that the number of oxide-oxide interfaces present in the multilayered stack has no visible impact on the breakdown growth rate among our samples. This strongly supports the interpretation of the bulk materials dominating the heat transfer to the surroundings of a fully formed conductive filament that shows no electrical differences between our various multilayered stack configurations.Fil: Boyeras Baldomá, Santiago. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Aguirre, F. L.. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Palumbo, Felix Roberto Mario. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentin

Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides

In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0.45 to 0.65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event.Fil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Rodriguez Fernandez, Alberto. Universitat Autònoma de Barcelona; EspañaFil: Pazos, Sebastián Matías. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Suñé, Jordi. Universitat Autònoma de Barcelona; EspañaFil: Miranda, Enrique. Universitat Autònoma de Barcelona; EspañaFil: Palumbo, Felix Roberto Mario. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentin

A Geometric modeling approach for flexible, printed square planariInductors under stretch

In this work a compact model for square planar inductors printed on flexible substrate is proposed. The approach considers the deformation of the metal traces of square spiral inductors when the substrate is subjected to physical stretch. The model considers a typical pi-network for the device, where each component is calculated for different stretching values adapting widely accepted models on the literature for the total inductance, the AC resistance and the ground coupling and inter-wounding capacitances. Model results are contrasted to 3D full electromagnetic wave simulations under parametric sweeps of the dimensions calculated under stretch. Results show good agreement within a 20 % stretch up to the first resonance frequency of the structure. The model can prove useful for the optimization of component design for printed applications on flexible substrates.Fil: Maroli, Gabriel. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; ArgentinaFil: Fontana, Andrés. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires; ArgentinaFil: Pazos, Sebastian. Universidad Tecnologica Nacional. Facultad Regional Buenos Aires. Departamento de Energia Electrica; ArgentinaFil: Palumbo, Felix Roberto Mario. Universidad Tecnologica Nacional. Facultad Regional Buenos Aires. Departamento de Energia electrica; Argentina; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Julian, Pedro Marcelo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Bahía Blanca. Instituto de Investigaciones en Ingeniería Eléctrica "Alfredo Desages". Universidad Nacional del Sur. Departamento de Ingeniería Eléctrica y de Computadoras. Instituto de Investigaciones en Ingeniería Eléctrica "Alfredo Desages"; Argentina2021 Argentine Conference on ElectronicsArgentinaUniversidad Nacional del Su

Application of the quasi-static memdiode model in cross-point arrays for large dataset pattern recognition

We investigate the use and performance of the quasi-static memdiode model (QMM) when incorporated into large cross-point arrays intended for pattern classification tasks. Following Chua's memristive devices theory, the QMM comprises two equations, one equation for the electron transport based on the double-diode circuit with single series resistance and a second equation for the internal memory state of the device based on the so-called logistic hysteron or memory map. Ex-situ trained memdiodes with different MNIST-like databases are used to establish the synaptic weights linking the top and bottom wire networks. The role played by the memdiode electrical parameters, wire resistance and capacitance values, image pixelation, connection schemes, signal-to-noise ratio and device-to-device variability in the classification effectiveness are investigated. The confusion matrix is used to benchmark the system performance metrics. We show that the simplicity, accuracy and robustness of the memdiode model makes it a suitable candidate for the realistic simulation of large-scale neural networks with non-idealities.Fil: Aguirre, Fernando Leonel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Universitat Autònoma de Barcelona; EspañaFil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Palumbo, Felix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Suñé, Jordi. Universitat Autònoma de Barcelona; EspañaFil: Miranda, Enrique. Universitat Autònoma de Barcelona; Españ

Mesoporous metal-oxide-semiconductor capacitors detect intra-porous fluid changes

Real-time measurements of fluidic phenomena inside nano/mesoporous films offer an alternative way to study fundamental processes, as well as to explore novel applications. Most current techniques use optical measurement methods or microgravimetric approaches. Here it is shown that a metal-oxide-semiconductor(MOS) capacitor can be used to detect fluidic transport inside mesoporous networks. The MOS stack, which consists of two contacts (Cu and silicon) separated by a supramolecularly templated mesoporous oxide film to form a MOS capacitor, detects fluid changes that can be quantified from an effective permittivity model ofmesoporous structures interacting with a fluid. The device was used to monitor liquids infiltration and subsequent evaporation in both titania and silica mesoporous films. It was observed how the evaporation dynamics significantly depends on film characteristics and fluid properties.Fil: Gimenez, Rocío. Comision Nacional de Energía Atómica; ArgentinaFil: Delgado, Diana C.. Comision Nacional de Energía Atómica; ArgentinaFil: Palumbo, Felix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnologica Nacional; ArgentinaFil: Berli, Claudio L. A.. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Bellino, Martín G.. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentin

Impact of bilayered oxide stacks on the breakdown transients of Metal-Oxide-Semiconductor devices: an experimental study

The role of the bilayered structure of the gate oxide on the dynamics of progressive breakdown is systematically studied on Au / Cr / HfO 2 / Al 2 O 3 / InGaAs metal-oxide-semiconductor stacks. Samples with bilayered oxides of 100 Å total thickness were fabricated using different Al 2 O 3 interfacial layer thicknesses to investigate the effects of combining insulator materials with largely different electrical and thermal properties. The breakdown current growth rate d I B D / d t was captured by means of low and high bandwidth measurement setups, and the results were compared in the framework of an electromigration-based progressive breakdown model, originally derived for single-layered oxides. Experimental results show that as the interfacial layer is thicker, a clear increase is observed on the applied voltage required to obtain d I B D / d t values in the same range. However, this effect is not observed for thicknesses above 10 Å for the Al 2 O 3 layer. This is linked to both the electrical stress distribution across the bilayered structure and to the thermal characteristics of Al 2 O 3 that contribute to reduce the temperature of the breakdown spot. The progressive breakdown model is modified to account for these features, showing good agreement with experimental results, behavior that cannot be explained by the model considering one of the layers as already broken during progressive breakdown.Fil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Boyeras Baldomá, Santiago. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Krylov, Igor. Technion - Israel Institute of Technology; IsraelFil: Eizenberg, M.. Technion - Israel Institute of Technology; IsraelFil: Palumbo, Felix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentin

Wear-out and breakdown of Ta2O5/Nb:SrTiO3 stacks

Tantalum oxide (Ta2O5) is widely used in electronics, with important applications in backend capacitors and memristors. However, major technological challenges have to be faced and solved. Also, concerns related to the reliability of these new stacks have to be taken into consideration. We report the reliability of Ta2O5 films focusing on the dynamics of the charge trapping and their leakage behavior under a constant voltage stress. We leverage the use of Nb:SrTiO3 back electrodes as a clean, well-defined surface, allowing the study of the Ta2O5 layer with no significant interface effects. The main features of the breakdown Ta2O5/Nb:SrTiO3 stacks are presented and analyzed in terms of an electromigration-based model. Our results outline the performance limits of Ta2O5 films, providing guidelines for development and integration of current and future devices.Fil: Boyeras Baldomá, Santiago. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Pazos, Sebastián Matías. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Aguirre, F. L.. Universitat Autònoma de Barcelona; EspañaFil: Ankonina, G.. Technion - Israel Institute of Technology; IsraelFil: Kornblum, L.. Technion - Israel Institute of Technology; IsraelFil: Yalon, E.. Technion - Israel Institute of Technology; IsraelFil: Palumbo, Felix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; Argentin

Erratum to: Guidelines for the use and interpretation of assays for monitoring autophagy (3rd edition) (Autophagy, 12, 1, 1-222, 10.1080/15548627.2015.1100356

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Evaluation of a quality improvement intervention to reduce anastomotic leak following right colectomy (EAGLE): pragmatic, batched stepped-wedge, cluster-randomized trial in 64 countries

Background Anastomotic leak affects 8 per cent of patients after right colectomy with a 10-fold increased risk of postoperative death. The EAGLE study aimed to develop and test whether an international, standardized quality improvement intervention could reduce anastomotic leaks. Methods The internationally intended protocol, iteratively co-developed by a multistage Delphi process, comprised an online educational module introducing risk stratification, an intraoperative checklist, and harmonized surgical techniques. Clusters (hospital teams) were randomized to one of three arms with varied sequences of intervention/data collection by a derived stepped-wedge batch design (at least 18 hospital teams per batch). Patients were blinded to the study allocation. Low- and middle-income country enrolment was encouraged. The primary outcome (assessed by intention to treat) was anastomotic leak rate, and subgroup analyses by module completion (at least 80 per cent of surgeons, high engagement; less than 50 per cent, low engagement) were preplanned. Results A total 355 hospital teams registered, with 332 from 64 countries (39.2 per cent low and middle income) included in the final analysis. The online modules were completed by half of the surgeons (2143 of 4411). The primary analysis included 3039 of the 3268 patients recruited (206 patients had no anastomosis and 23 were lost to follow-up), with anastomotic leaks arising before and after the intervention in 10.1 and 9.6 per cent respectively (adjusted OR 0.87, 95 per cent c.i. 0.59 to 1.30; P = 0.498). The proportion of surgeons completing the educational modules was an influence: the leak rate decreased from 12.2 per cent (61 of 500) before intervention to 5.1 per cent (24 of 473) after intervention in high-engagement centres (adjusted OR 0.36, 0.20 to 0.64; P < 0.001), but this was not observed in low-engagement hospitals (8.3 per cent (59 of 714) and 13.8 per cent (61 of 443) respectively; adjusted OR 2.09, 1.31 to 3.31). Conclusion Completion of globally available digital training by engaged teams can alter anastomotic leak rates. Registration number: NCT04270721 (http://www.clinicaltrials.gov)