Event-driven displays for manipulator control

The problem of constructing event-related information displays from multidimensional data generated by proximity, force-torque and tactile sensors integrated with the terminal device of a remotely controlled manipulator is considered. Event-driven displays are constructed by using appropriate algorithms acting on sensory data in real time. Event-driven information displays lessen the operator's workload and improve control performance. The paper describes and discusses several event-driven display examples that were implemented in the JPL teleoperator project, including a brief outline of the data handling system which drives the graphics display in real time. The paper concludes with a discussion of future plans to integrate event-driven displays with visual (TV) information

Displays for supervisory control of manipulators

The problem of displaying information generated by sensors attached to the terminal device of a remotely controlled manipulator is considered. The sensors under consideration are proximity, force-torque, tactile and slip-page sensors. The paper describes and evaluates several examples that have been implemented in the JPL teleoperator project using audio and graphic displays of information generated by four proximity sensors attached to a manipulator end effector. Design schemes are also discussed related to the display of information generated by a six-dimensional force-torque sensor, a multipoint proportional tactile sensor, and a directional slippage sensor. The paper concludes with a discussion of future integrated displays of visual (TV) and handbased sensor information

Ion mixing of markers in SiO2 and Si

The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of thin metal markers due to irradiation with 300-keV Xe+ ions. In SiO2, the mixing efficiency appears to be independent of the chemical nature of marker atoms and can be explained in terms of a linear cascade model. In Si, the mixing is found to correlate with thermally activated diffusivities of the marker species

Elastic properties of granular materials

SIGLEAvailable from British Library Document Supply Centre-DSC:DXN019852 / BLDSC - British Library Document Supply CentreGBUnited Kingdo

Development of a severe local storm prediction system: A 60-day test of a mesoscale primitive equation model

The progress and problems associated with the dynamical forecast system which was developed to predict severe storms are examined. The meteorological problem of severe convective storm forecasting is reviewed. The cascade hypothesis which forms the theoretical core of the nested grid dynamical numerical modelling system is described. The dynamical and numerical structure of the model used during the 1978 test period is presented and a preliminary description of a proposed multigrid system for future experiments and tests is provided. Six cases from the spring of 1978 are discussed to illustrate the model's performance and its problems. Potential solutions to the problems are examined

Ion implantation and low-temperature epitaxial regrowth of GaAs

Channeling and transmission electron microscopy have been used to investigate the parameters that govern the extent of damage in ion‐implanted GaAs and the crystal quality following capless furnace annealing at low temperature (∼400 °C). The implantation‐induced disorder showed a strong dependence on the implanted ion mass and on the substrate temperature during implantation. When the implantation produced a fully amorphous surface layer the main parameter governing the regrowth was the amorphous thickness. Formation of microtwins after annealing was observed when the initial amorphous layer was thicker than 400 Å. Also, the number of extended residual defects after annealing increased linearly with the initial amorphous thickness and extrapolation of that curve predicts good regrowth of very thin (<400 Å) GaAs amorphous layers produced by ion implantation. A model is presented to explain the observed features of the low‐temperature annealing of GaAs

A low noise, high thermal stability, 0.1 K test facility for the Planck HFI bolometers

We are developing a facility which will be used to characterize the bolometric detectors for Planck, an ESA mission to investigate the Cosmic Microwave Background. The bolometers operate at 0.1 K, employing neutron-transmutation doped (NTD) Ge thermistors with resistances of several megohms to achieve NEPs~1×10^(–17) W Hz^(–1/2). Characterization of the intrinsic noise of the bolometers at frequencies as low as 0.010 Hz dictates a test apparatus thermal stability of 40 nK Hz^(–1/2) to that frequency. This temperature stability is achieved via a multi-stage isolation and control geometry with high resolution thermometry implemented with NTD Ge thermistors, JFET source followers, and dedicated lock-in amplifiers. The test facility accommodates 24 channels of differential signal readout, for measurement of bolometer V(I) characteristics and intrinsic noise. The test facility also provides for modulated radiation in the submillimeter band incident on the bolometers, for measurement of the optical speed-of-response; this illumination can be reduced below detectable limits without interrupting cryogenic operation. A commercial Oxford Instruments dilution refrigerator provides the cryogenic environment for the test facility

X-ray rocking curve study of Si-implanted GaAs, Si, and Ge

Crystalline properties of Si-implanted GaAs, Si, and Ge have been studied by Bragg case double-crystal x-ray diffraction. Sharp qualitative and quantitative differences were found between the damage in GaAs on one hand and Si and Ge on the other. In Si and Ge the number of defects and the strain increase linearly with dose up to the amorphous threshold. In GaAs the increase in these quantities is neither linear nor monotonic with dose. At a moderate damage level the GaAs crystal undergoes a transition from elastic to plastic behavior. This transition is accompanied by the creation of extended defects, which are not detected in Si or Ge