Influence of Well-Width Fluctuations on the Electronic Structure of GaN/Al x

Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers)

Influence of Well-Width Fluctuations on the Electronic Structure of GaN/Alx\text{}_{x}Ga1−x\text{}_{1-x}N Multiquantum Wells with Graded Interfaces

Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers)

Mn+1AXn phases in the Ti-Si-C system studied by thin-film synthesis and ab initio calculations

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Ab initio calculations and experimental study of piezoelectric YxIn1-xN thin films deposited using reactive magnetron sputter epitaxy

By combining theoretical prediction and experimental verification we investigate the piezoelectric properties of yttrium indium nitride (YxIn1-xN). Ab initio calculations show that the YxIn1-xN wurtzite phase is lowest in energy among relevant alloy structures for 0 <= x <= 0.5. Reactive magnetron sputter epitaxy was used to prepare thin films with Y content up to x=0.51. The composition dependence of the lattice parameters observed in the grown films is in agreement with that predicted by the theoretical calculations confirming the possibility to synthesize a wurtzite solid solution. An AIN buffer layer greatly improves the crystalline quality and surface morphology of subsequently grown YxIn1-xN films. The piezoelectric response in films with x=0.09 and x=0.14 is observed using piezoresponse force microscopy. Theoretical calculations of the piezoelectric properties predict YxIn1-xN to have comparable piezoelectric properties to ScxAl1-xN