Time transfer by IRIG-B time code via dedicated telephone link

Measurements were made of the stability of time transfer by the IRIG-B code over a dedicated telephone link on a microwave system. The short and long term Allan Variance was measured on both types of microwave system, one of which is synchronized, the other having free local oscillators. The results promise a time transfer accuracy of 10 microns. The paper also describes a prototype slave clock designed to detect interference in the IRIG-B code to ensure local time is kept during such interference

Compendium of Current Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA

Sensitivity of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices

Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes

Destructive Single-Event Failures in Diodes

In this summary, we have shown that diodes are susceptible to destructive single-event effects, and that these failures occur along the guard ring. By determining the last passing voltages, a safe operating area can be derived. By derating off of those values, rather than by the rated voltage, like what is currently done with power MOSFETs, we can work to ensure the safety of future missions. However, there are still open questions about these failures. Are they limited to a single manufacturer, a small number, or all of them? Is there a threshold rated voltage that must be exceeded to see these failures? With future work, we hope to answer these questions. In the full paper, laser results will also be presented to verify that failures only occur along the guard ring

Use of Commercial FPGA-Based Evaluation Boards for Single-Event Testing of DDR2 and DDR3 SDRAMs

We investigate the use of commercial FPGA based evaluation boards for radiation testing DDR2 and DDR3 SDRAMs. We evaluate the resulting data quality and the tradeoffs involved in the use of these boards

Recent Radiation Test Results for Power MOSFETs

Single-event effect (SEE) and total ionizing dose (TID) test results are presented for various hardened and commercial power metal-oxide-semiconductor field effect transistors (MOSFETs), including vertical planar, trench, superjunction, and lateral process designs

Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node

We present Single Event Effect (SEE) and Total Ionizing Dose (TID) data for 1 Gbit DDR SDRAMs (90 nm CMOS technology) as well as comparing this data with earlier technology nodes from the same manufacturer

Radiation and Reliability Concerns for Modern Nonvolatile Memory Technology

Commercial nonvolatile memory technology is attractive for space applications, but radiation issues are serious concerns. In addition, we discuss combined radiation/reliability concerns which are only beginning to be addressed

Compendium of Current Single Event Effects Results for Candidate Spacecraft Electronics for NASA

Sensitivity of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is presented. Devices tested include digital, linear, and hybrid devices

Investigation of Current Spike Phenomena During Heavy Ion Irradiation of NAND Flash Memories

A series of heavy ion and laser irradiations were performed to investigate previously reported current spikes in flash memories. High current events were observed, however, none matches the previously reported spikes. Plausible mechanisms are discussed