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research
Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node
Authors
M. D. Berg
S. Crain
+9Â more
M. Friendlich
J. George
Jerry L. Gorelick
H. Kim
R. Koga
K. LaBel
Raymond L. Ladbury
R. A. Reed
P. Yu
Publication date
17 July 2006
Publisher
Abstract
We present Single Event Effect (SEE) and Total Ionizing Dose (TID) data for 1 Gbit DDR SDRAMs (90 nm CMOS technology) as well as comparing this data with earlier technology nodes from the same manufacturer
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oai:casi.ntrs.nasa.gov:2008003...
Last time updated on 31/05/2013