26,489 research outputs found

    Influence of organic films on the evaporation and condensation of water in aerosol

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    Uncertainties in quantifying the kinetics of evaporation and condensation of water from atmospheric aerosol are a significant contributor to the uncertainty in predicting cloud droplet number and the indirect effect of aerosols on climate. The influence of aerosol particle surface composition, particularly the impact of surface active organic films, on the condensation and evaporation coefficients remains ambiguous. Here, we report measurements of the influence of organic films on the evaporation and condensation of water from aerosol particles. Significant reductions in the evaporation coefficient are shown to result when condensed films are formed by monolayers of long-chain alcohols [C(n)H((2n+1))OH], with the value decreasing from 2.4 × 10(−3) to 1.7 × 10(−5) as n increases from 12 to 17. Temperature-dependent measurements confirm that a condensed film of long-range order must be formed to suppress the evaporation coefficient below 0.05. The condensation of water on a droplet coated in a condensed film is shown to be fast, with strong coherence of the long-chain alcohol molecules leading to islanding as the water droplet grows, opening up broad areas of uncoated surface on which water can condense rapidly. We conclude that multicomponent composition of organic films on the surface of atmospheric aerosol particles is likely to preclude the formation of condensed films and that the kinetics of water condensation during the activation of aerosol to form cloud droplets is likely to remain rapid

    High-temperature-materials study

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    Chemical vapor deposition of aluminum phosphides onto single crystals of silicon and gallium arsenide for producing high temperature operating solid state electronic device

    Microswitches with Sputtered Au, AuPd,Au-on-AuPt, and AuPtCu Alloy Electric Contacts

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    This paper is the first to report on a new analytic model for predicting microcontact resistance and the design, fabrication, and testing of microelectromechanical systems (MEMS) metal contact switches with sputtered bimetallic (i.e., gold (Au)-on-Au-platinum (Pt), (Au-on-Au-(6.3at%)Pt)), binary alloy (i.e., Au-palladium (Pd), (Au-(3.7at%)Pd)), and ternary alloy (i.e., Au-Pt-copper (Cu), (Au-(5.0at%)Pt-(0.5at%)Cu)) electric contacts. The microswitches with bimetallic and binary alloy contacts resulted in contact resistance values between 1-2Omega. Preliminary reliability testing indicates a 3times increase in switching lifetime when compared to microswitches with sputtered Au electric contacts. The ternary alloy exhibited approximately a 6times increase in switch lifetime with contact resistance values ranging from approximately 0.2-1.8Omeg

    Bell inequalities for continuous-variable correlations

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    We derive a new class of correlation Bell-type inequalities. The inequalities are valid for any number of outcomes of two observables per each of n parties, including continuous and unbounded observables. We show that there are no first-moment correlation Bell inequalities for that scenario, but such inequalities can be found if one considers at least second moments. The derivation stems from a simple variance inequality by setting local commutators to zero. We show that above a constant detector efficiency threshold, the continuous variable Bell violation can survive even in the macroscopic limit of large n. This method can be used to derive other well-known Bell inequalities, shedding new light on the importance of non-commutativity for violations of local realism.Comment: 4 pages, 1 figure. v2: New results on detector efficiencies and macroscopic limit, new co-author, changed title and abstract, changed figure, added journal reference and DO

    A Comparison of Micro-Switch Analytic, Finite element, and Experimental Results

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    Electrostatically actuated, metal contact, micro-switches depend on having adequate contact force to achieve desired, low contact resistance. In this study, higher contact forces resulted from overdriving cantilever beam style switches, after pull-in or initial contact, until the beam collapsed onto the drive or actuation electrode. The difference between initial contact and beam collapse was defined as the useful contact force range. Micro-switch pull-in voltage, collapse voltage, and contact force predictions, modeled analytically and with the CoventorWare finite element software package, were compared to experimental results. Contact resistance was modeled analytically using Maxwellian spreading resistance theory. Contact resistance and contact force were further investigated by varying the width of the drive electrode. A minimum contact resistance of 0.26 Ω role= presentation style= box-sizing: border-box; margin: 0px; padding: 0px; display: inline-block; font-style: normal; font-weight: normal; line-height: normal; font-size: 14.4px; text-indent: 0px; text-align: left; text-transform: none; letter-spacing: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; position: relative; \u3eΩ was measured on micro-switches with 150 μm-wide drive electrodes. The useful contact force range for these devices was between 22.7 and 58.3 V. Contributions of this work include: a contact force equation useful for initial micro-switch designs, a detailed pull-in voltage, collapse voltage, and contact force investigation using CoventorWare, a direct comparison of measured results with analytic and finite element predictions, and a means of choosing a micro-switch operating point for optimized contact resistance performance

    Dynamical Quantum Memories

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    We propose a dynamical approach to quantum memories using an oscillator-cavity model. This overcomes the known difficulties of achieving high quantum input-output fidelity with storage times long compared to the input signal duration. We use a generic model of the memory response, which is applicable to any linear storage medium ranging from a superconducting device to an atomic medium. The temporal switching or gating of the device may either be through a control field changing the coupling, or through a variable detuning approach, as in more recent quantum memory experiments. An exact calculation of the temporal memory response to an external input is carried out. This shows that there is a mode-matching criterion which determines the optimum input and output mode shape. This optimum pulse shape can be modified by changing the gate characteristics. In addition, there is a critical coupling between the atoms and the cavity that allows high fidelity in the presence of long storage times. The quantum fidelity is calculated both for the coherent state protocol, and for a completely arbitrary input state with a bounded total photon number. We show how a dynamical quantum memory can surpass the relevant classical memory bound, while retaining a relatively long storage time.Comment: 16 pages, 9 figure
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