Single-layer and bilayer graphene superlattices: collimation, additional Dirac points and Dirac lines

We review the energy spectrum and transport properties of several types of one- dimensional superlattices (SLs) on single-layer and bilayer graphene. In single-layer graphene, for certain SL parameters an electron beam incident on a SL is highly collimated. On the other hand there are extra Dirac points generated for other SL parameters. Using rectangular barriers allows us to find analytic expressions for the location of new Dirac points in the spectrum and for the renormalization of the electron velocities. The influence of these extra Dirac points on the conductivity is investigated. In the limit of {\delta}-function barriers, the transmission T through, conductance G of a finite number of barriers as well as the energy spectra of SLs are periodic functions of the dimensionless strength P of the barriers, P{\delta}(x) ~ V (x). For a Kronig-Penney SL with alternating sign of the height of the barriers the Dirac point becomes a Dirac line for P = {\pi}/2 + n{\pi} with n an integer. In bilayer graphene, with an appropriate bias applied to the barriers and wells, we show that several new types of SLs are produced and two of them are similar to type I and type II semiconductor SLs. Similar as in single-layer graphene extra "Dirac" points are found. Non-ballistic transport is also considered.Comment: 26 pages, 17 figure

Extra Dirac points in the energy spectrum for superlattices on single-layer graphene

We investigate the emergence of extra Dirac points in the electronic structure of a periodically spaced barrier system, i.e., a superlattice, on single-layer graphene, using a Dirac-type Hamiltonian. Using square barriers allows us to find analytic expressions for the occurrence and location of these new Dirac points in k-space and for the renormalization of the electron velocity near them in the low-energy range. In the general case of unequal barrier and well widths the new Dirac points move away from the Fermi level and for given heights of the potential barriers there is a minimum and maximum barrier width outside of which the new Dirac points disappear. The effect of these extra Dirac points on the density of states and on the conductivity is investigated.Comment: 7 pages, 8 figures, accepted for publication in Phys. Rev.

Dirac electrons in a Kronig-Penney potential: dispersion relation and transmission periodic in the strength of the barriers

The transmission T and conductance G through one or multiple one-dimensional, delta-function barriers of two-dimensional fermions with a linear energy spectrum are studied. T and G are periodic functions of the strength P of the delta-function barrier V(x,y) / hbar v_F = P delta(x). The dispersion relation of a Kronig-Penney (KP) model of a superlattice is also a periodic function of P and causes collimation of an incident electron beam for P = 2 pi n and n integer. For a KP superlattice with alternating sign of the height of the barriers the Dirac point becomes a Dirac line for P = (n + 1/2) pi.Comment: 5 pages, 6 figure

Dirac and Klein-Gordon particles in one-dimensional periodic potentials

We evaluate the dispersion relation for massless fermions, described by the Dirac equation, and for zero-spin bosons, described by the Klein-Gordon equation, moving in two dimensions and in the presence of a one-dimensional periodic potential. For massless fermions the dispersion relation shows a zero gap for carriers with zero momentum in the direction parallel to the barriers in agreement with the well-known "Klein paradox". Numerical results for the energy spectrum and the density of states are presented. Those for fermions are appropriate to graphene in which carriers behave relativistically with the "light speed" replaced by the Fermi velocity. In addition, we evaluate the transmission through a finite number of barriers for fermions and zero-spin bosons and relate it with that through a superlattice.Comment: 9 pages, 12 figure

Avancées et nouvelles technologies en Toxinologie

Collection Rencontres en Toxinologie ISSN 1760-6004 ; http://sfet.asso.fr/images/stories/SFET/pdf/Ebook-RT18-2010-signets-110322.pdfInternational audienc

Surface composition of BaTiO3/SrTiO3(001) films grown by atomic oxygen plasma assisted molecular beam epitaxy

We have investigated the growth of BaTiO3 thin films deposited on pure and 1% Nb-doped SrTiO3(001) single crystals using atomic oxygen assisted molecular beam epitaxy (AO-MBE) and dedicated Ba and Ti Knudsen cells. Thicknesses up to 30 nm were investigated for various layer compositions. We demonstrate 2D growth and epitaxial single crystalline BaTiO3 layers up to 10 nm before additional 3D features appear; lattice parameter relaxation occurs during the first few nanometers and is completed at {\guillemotright}10 nm. The presence of a Ba oxide rich top layer that probably favors 2D growth is evidenced for well crystallized layers. We show that the Ba oxide rich top layer can be removed by chemical etching. The present work stresses the importance of stoichiometry and surface composition of BaTiO3 layers, especially in view of their integration in devices.Comment: In press in J. Appl. Phy

Does Land Degradation Increase Poverty in Developing Countries?

Additional data sets can be found at these links and in the supplemental file: http://www.edwardbbarbier.com/Projects/ELD/Economics_of_Land_Degradation_data_2000DAL.html, http://www.edwardbbarbier.com/Projects/ELD/Economics_of_Land_Degradation_data_2010DAL.html, http://www.edwardbbarbier.com/Projects/ELD/Economics_of_Land_Degradation_data_2000_to_2010DAL.htmlLand degradation is a global problem that particularly impacts the poor rural inhabitants of low and middle-income countries. We improve upon existing literature by estimating the extent of rural populations in 2000 and 2010 globally on degrading and improving agricultural land, taking into account the role of market access, and analyzing the resulting impacts on poverty. Using a variety of spatially referenced datasets, we estimate that 1.33 billion people worldwide in 2000 were located on degrading agricultural land (DAL), of which 1.26 billion were in developing countries. Almost all the world’s 200 million people on remote DAL were in developing countries, which is about 6% of their rural population. There were also 1.54 billion rural people on improving agricultural land (IAL), with 1.34 billion in developing countries. We find that a lower share of people in 2000 on DAL, or a higher share on IAL, lowers significantly how much overall economic growth reduces poverty from 2000 to 2012 across 83 developing countries. As the population on DAL and IAL in developing countries grew by 13% and 15% respectively from 2000 to 2010, these changing spatial distributions of rural populations could impact significantly future poverty in developing countries.ECU Open Access Publishing Support Fun

La construction d’une démarche interdisciplinaire à partir de l’émergence de la céréaliculture biologique en Camargue: le projet CEBIOCA

La céréaliculture biologique apparait comme une alternative aux modes de production conventionnels, pour un nombre croissant d'agriculteurs de Camargue. Le programme CEBIOCA cherche à appuyer le développement de ce prototype d'agriculture en favorisant l'élaboration de pratiques agricoles pertinentes, la production de matériel végétal adapté et la mesure des impacts de la conversion à l'AB. Un groupe de travail interdisciplinaire, associant génétique, agronomie, malherbologie, écologie et sociologie s'est constitué à l'occasion de la réponse à l'appel d'offre CIAB et au cours de la première phase de fonctionnemet qui est présenté ici. Malgré certaines lacunes ou faiblesses dans la construction interdiciplinaire, les résultats font entrevoir des perspectives prometteuses,dans un contexte plus favorable, à condition que les partenariats scientifiques et professionnles soient renforcés

PULSED ELECTRON BEAM ANNEALING OF As AND B IMPLANTED SILICON

p-type (100) silicon wafers have been implanted either by As or B ions at 20 and 200 keV energies and doses of 1016cm-2. Pulsed electron beam annealing has been performed with fluences of 1.1 and 1.4 J/cm2 using a mean electron energy of 15 keV. The pulse duration was 50 ns. The annealed layers have been investigated by Rutherford backscattering under random and channeling conditions and by S.I.M.S. profiling. Good crystal regrowth and high dopant activation occur in all cases except for the 200 keV Boron implant. Impurities redistribution is observed but no significant segregation effects appear. The experimental profiles are in good agreement with a diffusion model using a modified green function solution and taking into account dopant diffusion in liquid phase and the computed melt front location. The deduced diffusion coefficient are in the 5.10-5cm2/s range for boron and 2.10-4cm2/s range for arsenic