p-type (100) silicon wafers have been implanted either by As or B ions at 20 and 200 keV energies and doses of 1016cm-2. Pulsed electron beam annealing has been performed with fluences of 1.1 and 1.4 J/cm2 using a mean electron energy of 15 keV. The pulse duration was 50 ns. The annealed layers have been investigated by Rutherford backscattering under random and channeling conditions and by S.I.M.S. profiling. Good crystal regrowth and high dopant activation occur in all cases except for the 200 keV Boron implant. Impurities redistribution is observed but no significant segregation effects appear. The experimental profiles are in good agreement with a diffusion model using a modified green function solution and taking into account dopant diffusion in liquid phase and the computed melt front location. The deduced diffusion coefficient are in the 5.10-5cm2/s range for boron and 2.10-4cm2/s range for arsenic
