Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications

Cataloged from PDF version of article.Semi-insulating character ( sheet resistivity of 3.26 x 10(11) ohm/sq ) of thick GaN layers was developed for AlGaN/GaN high electron mobility transistor ( HEMT ) applications on an AlN buffer layer. Electrical and structural properties were characterized by a dark current-voltage transmission line model, x-ray diffraction, and atomic force microscope measurements. The experimental results showed that compared to semi-insulating GaN grown on low temperature GaN nucleation, the crystal quality as well as surface morphology were remarkably improved. It was ascribed to the utilization of a high quality insulating AlN buffer layer and the GaN initial coalescence growth mode. Moreover, the significant increase of electron mobility in a HEMT structure suggests that this is a very promising method to obtain high performance AlGaN/GaN HEMT structures on sapphire substrates. (c) 2006 American Institute of Physics

Near-field light localization using subwavelength apertures incorporated with metamaterials

Cataloged from PDF version of article.We report strong near-field electromagnetic localization by using subwavelength apertures and metamaterials that operate at microwave frequencies. We designed split ring resonators with distinct configurations in order to obtain extraordinary transmission results. Furthermore, we analyzed the field localization and focusing characteristics of the transmitted evanescent waves. The employed metamaterial configurations yielded an improvement on the transmission efficiency on the order of 27 dB and 50 dB for the deep subwavelength apertures. The metamaterial loaded apertures are considered as a total system that offered spot size conversion ratios as high as 7.12 and 9.11 for the corresponding metamaterial configurations. The proposed system is shown to intensify the electric fields of the source located in the near-field. It also narrows down the electromagnetic waves such that a full width at half maximum value of λ/29 is obtained. © 2012 Elsevier B.V. All rights reserved

Experimental demonstration of the enhanced transmission through circular and rectangular sub-wavelength apertures using omega-like split-ring resonators

Cataloged from PDF version of article.Enhanced transmission through circular and rectangular sub-wavelength apertures using omega-shaped split-ring resonator is numerically and experimentally demonstrated at microwave frequencies. We report a more than 150,000-fold enhancement through a deep sub-wavelength aperture drilled in a metallic screen. To the authors’ best knowledge, this is the highest experimentally obtained enhancement factor reported in the literature. In the paper, we address also the origins and the physical reasons behind the enhancement results. Moreover, we report on the differences occurring when using circular, rectangular apertures as well as doublesided and single-sided omega-like split ring resonator structures. (C) 2012 Elsevier B.V. All rights reserve

Metal–semiconductor–metal photodetector on as-deposited TiO2 thin films on sapphire substrate

Cataloged from PDF version of article.TiO2 thin films are prepared on c-plane sapphire substrates by the RF magnetron sputtering method. The performance of the Pt contact metal–semiconductor–metal (MSM) photodetector fabricated on as-deposited films is studied. The dark current density and the responsivity obtained were 1.57 × 10−9 A/cm2 at 5 V bias and 1.73 A/W at 50 V bias, respectively. Breakdown is not observed up to 50 V bias. Rise and fall times for the photocurrent were 7 and 3 s, respectively. Our results show that high quality MSM photodetectors can be fabricated without high temperature and complicated fabrication steps

Chemical Visualization of a GaN p-n junction by XPS

We report on an operando XPS investigation of a GaN diode, by recording the Ga2p 3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device

Asymmetric light propagation in chirped photonic crystal waveguides

Cataloged from PDF version of article.We report numerical and experimental investigations of asymmetric light propagation in a newly designed photonic structure that is formed by creating a chirped photonic crystal (PC) waveguide. The use of a non-symmetric distribution of unit cells of PC ensures the obtaining of asymmetric light propagation. Properly designing the spatial modulation of a PC waveguide inherently modifies the band structure. That in turn induces asymmetry for the light's followed path. The investigation of the transmission characteristics of this structure reveals optical diode like transmission behavior. The amount of power collected at the output of the waveguide centerline is different for the forward and backward propagation directions in the designed configuration. The advantageous properties of the proposed approach are the linear optic concept, compact configuration and compatibility with the integrated photonics. These features are expected to hold great potential for implementing practical optical rectifier-type devices. (C) 2012 Optical Society of America

Co doping induced structural and optical properties of sol-gel prepared ZnO thin films

Cataloged from PDF version of article.The preparation conditions for Co doping process into the ZnO structure were studied by the ultrasonic spray pyrolysis technique. Structural and optical properties of the Co:ZnO thin films as a function of Co concentrations were examined. It was observed that hexagonal wurtzite structure of ZnO is dominant up to the critical value, and after the value, the cubic structural phase of the cobalt oxide appears in the X-ray diffraction patterns. Every band-edge of Co:ZnO films shifts to the lower energies and all are confirmed with the PL measurements. Co substitution in ZnO lattice has been proved by the optical transmittance measurement which is observed as the loss of transmission appearing in specific region due to Co2+ characteristic transitions. © 2014 Elsevier B.V. All rights reserved

Analytical Model of Connected Bi-Omega: Robust Particle for the Selective Power Transmission Through Sub-Wavelength Apertures

Cataloged from PDF version of article.In this paper, we present a new analytical model of the connected bi-omega structure consisting of two bi-omega particles connected together through their arms. A single bi-omega particle consists of a pair of regular equal omegas with mirror symmetry. Assuming the individual bi-omega particle electrically small, the equivalent circuit is derived, in order to predict its resonant frequency. Then, two bi-omega particles are connected together, obtaining a symmetric structure that supports two fundamental modes, with even and odd symmetries, respectively. The proposed analytical model, then, is used to develop a procedure allowing the design of the particle for a desired resonant frequency. The effectiveness of the proposed analytical model and design guidelines is confirmed by proper comparisons to full-wave numerical and experimental results. We also demonstrate through a proper set of experiments that the resonant frequencies of the connected bi-omega particle depend only on the geometrical and electrical parameters of the omegas and are rather insensitive to the practical scenario where the particle itself is actually used, e.g. in free-space, rectangular waveguide or across an aperture in a metallic screen

Comparison of PI Controllers Designed for the Delay Model of TCP/AQM Networks

Cataloged from PDF version of article.One of the major problems of communication networks is congestion. In order to address this problem in TCP/IP networks, Active Queue Management (AQM) scheme is recommended. AQM aims to minimize the congestion by regulating the average queue size at the routers. To improve upon AQM, recently, several feedback control approaches were proposed. Among these approaches, PI controllers are gaining attention because of their simplicity and ease of implementation. In this paper, by utilizing the fluid-flow model of TCP networks, we study the PI controllers designed for TCP/AQM. We compare these controllers by first analyzing their robustness and fragility. Then, we implement these controllers in ns-2 platform and conduct simulation experiments to compare their performances in terms of queue length. Taken together, our results provide a guideline for choosing a PI controller for AQM given specific performance requirements. (C) 2013 Elsevier B.V. All rights reserved

Low dark current and high speed ZnO metal–semiconductor–metal photodetector on SiO2/Si substrate

Cataloged from PDF version of article.ZnO thin films are deposited by radio-frequency magnetron sputtering on thermally grown SiO2 on Si substrates. Pt/Au contacts are fabricated by standard photolithography and lift-off in order to form a metal-semiconductor-metal (MSM) photodetector. The dark current of the photodetector is measured as 1 pA at 100V bias, corresponding to 100 pA/cm(2) current density. Spectral photoresponse measurement showed the usual spectral behavior and 0.35 A/W responsivity at a 100V bias. The rise and fall times for the photocurrent are measured as 22 ps and 8 ns, respectively, which are the lowest values to date. Scanning electron microscope image shows high aspect ratio and dense grains indicating high surface area. Low dark current density and high speed response are attributed to high number of recombination centers due to film morphology, deducing from photoluminescence measurements. These results show that as deposited ZnO thin film MSM photodetectors can be used for the applications needed for low light level detection and fast operation. (C) 2014 AIP Publishing LLC