‘We kind of try to merge our own experience with the objectivity of the criteria’: The role of connoisseurship and tacit practice in undergraduate fine art assessment

This article explores connoisseurship in the context of fine art undergraduate assessment practice. I interviewed twelve fine art lecturers in order to explore and unpack the concept of connoisseurship in relation to subjectivity, objectivity and tacit practice. Building on the work of Bourdieu (1973, 1977, 1986) and Shay (2003, 2005), both of whom problematize the view that subjectivity and objectivity are binary opposites, my research illustrates the ways that connoisseurship is underpinned by informed professional judgements located in communities of practice. Within this particular conception of connoisseurship, the lecturers’ expertise is co-constituted in communities of assessors through participation and engagement. Standards reside in communities of practice

Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100)

We have investigated the molecular beam epitaxy growth of highly strained InGaAs on GaAs(100) as a function of the anion to cation flux ratio. Using reflection high energy electron diffraction the evolution of the film morphology is monitored and the surface lattice constant is measured. It is found that the cation to anion flux ratio dramatically affects the growth mode. Under arsenic‐rich conditions, growth is characterized by a two‐dimensional (2D) to three‐dimensional (3D) morphological transformation. However, for cation‐stabilized conditions, 3D islanding is completely suppressed, and 2D planar growth is observed. We associate these differences in the growth mode with corresponding changes in the surface tension of the overlayer. A high surface tension stabilizes 2D growth. An analysis which relates surface tension to a critical thickness for the onset of coherent island formation supports this view.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70295/2/APPLAB-62-1-46-1.pd

An STM study of molecular-beam epitaxy growth of GaAs

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/30972/1/0000645.pd

A combined molecular‐beam epitaxy and scanning tunneling microscopy system

A combined molecular‐beam epitaxy and scanning tunneling microscopy system has been constructed. The design has been optimized for the study of III‐V semiconductors with the goal of examining the surface with both in situ scanning tunneling microscopy (STM) and reflection high‐energy electron diffraction (RHEED). Using this system, it is possible to quench the growth and produce real‐space images of the surface as it appeared during deposition. Measurements obtained with both RHEED and STM are presented.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70399/2/RSINAK-62-6-1400-1.pd

Gluon Radiation in ttˉt\bar t Production and Decay at the LHC

Understanding the pattern of gluon radiation in $t \bar t$ production and decay processes is important for making an accurate determination of the top mass from the momenta of its decay products. The larger energy of the LHC $pp$ collider boosts the top cross section by a factor of 100 compared to that at the Tevatron, but it also increases the amount of additional gluon radiation. We calculate the cross section for gluon radiation in top production and decay at the LHC. The distributions of this radiation are presented and the exact matrix-element results are compared with results from the HERWIG parton-shower Monte Carlo.Comment: 16 pages including 7 figures, plain LaTeX; minor corrections to text; results unchange

CCD‐based reflection high‐energy electron diffraction detection and analysis system

A CCD‐based, computer controlled RHEED detection and analysis system that utilizes an on‐chip integration technique and on‐board data manipulation is described. The system is capable of in situ time‐resolved measurements of specular and integral‐order intensity oscillations, their phase differences, streak linewidths, and epitaxial layer lattice constants. The digital RHEED techniques are described in the context of Co/Au bilayer, GaAs/GaAs, and InxGa1−xAs/GaAs MBE growth. The system is compared to other RHEED detection devices.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70680/2/RSINAK-62-5-1263-1.pd

Towards practice-based studies of HRM: an actor-network and communities of practice informed approach

HRM may have become co-terminus with the new managerialism in the rhetorical orthodoxies of the HRM textbooks and other platforms for its professional claims. However, we have detailed case-study data showing that HR practices can be much more complicated, nuanced and indeed resistive toward management within organizational settings. Our study is based on ethnographic research, informed by actor-network theory and community of practice theory conducted by one of the authors over an 18-month period. Using actor-network theory in a descriptive and critical way, we analyse practices of managerial resistance, enrolment and counter-enrolment through which an unofficial network of managers used a formal HRM practice to successfully counteract the official strategy of the firm, which was to close parts of a production site. As a consequence, this network of middle managers effectively changed top management strategy and did so through official HRM practices, coupled with other actor-network building processes, arguably for the ultimate benefit of the organization, though against the initial views of the top management. The research reported here, may be characterized as a situated study of HRM-in-practice and we draw conclusions which problematize the concept of HRM in contemporary management literature

Surface reconstructions of In-enriched InGaAs alloys

The atomic structure of In0.81Ga0.19As/InPIn0.81Ga0.19As/InP alloy layers was examined using in situ scanning tunneling microscopy. The (2×3) reconstruction observed during growth by reflection high-energy electron diffraction represents a combination of surface structures, including a β2(2×4) commonly observed on GaAs(001) and InAs(001) surfaces, and a disordered (4×3) that is unique to alloy systems. The proposed (4×3) structure is comprised of both anion and cation dimers. Empty and filled states images show that the features reverse contrast with sample bias, in agreement with the model. © 2003 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70065/2/APPLAB-83-7-1361-1.pd

The central structure of Broad Absorption Line QSOs: observational characteristics in the cm-mm wavelength domain

Accounting for ~20% of the total QSO population, Broad Absorption Line QSOs are still an unsolved problem in the AGN context. They present wide troughs in the UV spectrum, due to material with velocities up to 0.2 c toward the observer. The two models proposed in literature try to explain them as a particular phase of the evolution of QSOs or as normal QSOs, but seen from a particular line of sight. We built a statistically complete sample of Radio-Loud BAL QSOs, and carried out an observing campaign to piece together the whole spectrum in the cm wavelength domain, and highlight all the possible differences with respect to a comparison sample of Radio-Loud non-BAL QSOs. VLBI observations at high angular resolution have been performed, to study the pc-scale morphology of these objects. Finally, we tried to detect a possible dust component with observations at mm-wavelengths. Results do not seem to indicate a young age for all BAL QSOs. Instead a variety of orientations and morphologies have been found, constraining the outflows foreseen by the orientation model to have different possible angles with respect to the jet axis