A norm for Tsirelson's Banach space

We give an expression for the norm of the space constructed by Tsirelson. The implicit equation satisfied by this norm is dual to the implicit equation for the norm of the dual of Tsirelson space given by Figiel and Johnson. The expression can be modified to give the norm of the dual of any mixed Tsirelson space. In particular, our results can be adapted to give the norm for the dual of Schlumprecht space

Orbital character effects in the photon energy and polarization dependence of pure C60 photoemission

Recent direct experimental observation of multiple highly-dispersive C$_{60}$ valence bands has allowed for a detailed analysis of the unique photoemission traits of these features through photon energy- and polarization-dependent measurements. Previously obscured dispersions and strong photoemission traits are now revealed by specific light polarizations. The observed intensity effects prove the locking in place of the C$_{60}$ molecules at low temperatures and the existence of an orientational order imposed by the substrate chosen. Most importantly, photon energy- and polarization-dependent effects are shown to be intimately linked with the orbital character of the C$_{60}$ band manifolds which allows for a more precise determination of the orbital character within the HOMO-2. Our observations and analysis provide important considerations for the connection between molecular and crystalline C$_{60}$ electronic structure, past and future band structure studies, and for increasingly popular C$_{60}$ electronic device applications, especially those making use of heterostructures

Tuning the proximity effect in a superconductor-graphene-superconductor junction

We have tuned in situ the proximity effect in a single graphene layer coupled to two Pt/Ta superconducting electrodes. An annealing current through the device changed the transmission coefficient of the electrode/graphene interface, increasing the probability of multiple Andreev reflections. Repeated annealing steps improved the contact sufficiently for a Josephson current to be induced in graphene.Comment: Accepted for publication in Phys. Rev.

Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of novel device designs based on sub-band gap internal photoemission from Bi2Se3 into Si

Phonon assisted dynamical Coulomb blockade in a thin suspended graphite sheet

The differential conductance in a suspended few layered graphene sample is fou nd to exhibit a series of quasi-periodic sharp dips as a function of bias at l ow temperature. We show that they can be understood within a simple model of dyn amical Coulomb blockade where energy exchanges take place between the charge carriers transmitted trough the sample and a dissipative electromagnetic envir onment with a resonant phonon mode strongly coupled to the electrons