The effects of ground hydrology on climate sensitivity to solar constant variations

The effects of two different evaporation parameterizations on the climate sensitivity to solar constant variations are investigated by using a zonally averaged climate model. The model is based on a two-level quasi-geostrophic zonally averaged annual mean model. One of the evaporation parameterizations tested is a nonlinear formulation with the Bowen ratio determined by the predicted vertical temperature and humidity gradients near the earth's surface. The other is the linear formulation with the Bowen ratio essentially determined by the prescribed linear coefficient

Fretting wear of Ti(CxNy) PVD coatings under variable environmental conditions

Fretting wear as a specific type of degradation is defined as an oscillatory motion at small amplitude between two nominally stationary solid bodies in mutual contact. Under external stresses the interface is being damaged by debris generation and its successive ejections outside the contact area. A potential protection against fretting damage by means of hard coatings is being offered by different surface engineering techniques. For this study TiC, TiN and TiCN hard coatings manufactured by a PVD method have been selected and tested against smooth polycrystalline alumina ball. A fretting test programme has been carried out at the frequency of 5Hz, 100N normal load, 100µm displacement amplitude and at three values of a relative humidity: 10, 50 and 90% at 295-298K temperature. It turned out that the intensity of wear process was depending not only on loading conditions but on environmental ones as well. A significant impact of RH on wear rate and friction behaviour of the coatings under investigation has been observed. Two different damage mechanisms have been identified and related to the phenomena of debris oxidation and debris adhesion to the counterbody surface. In the latter case the debris deposited onto the surface of the alumina ball lead to a change of stress distribution at the interface and as a result to accelerated wear. In this work experiments with variable relative humidity increasing from 10% to 90% within 1 a single fretting test have been completed. It follows from these experiments that there exists an intermediate value of the RH at which the friction coefficient changes rapidly. Finally a dissipated energy approach has been applied in the work in order to quantify and compare fretting wear rates of different hard coatings

Gate Coupling to Nanoscale Electronics

The realization of single-molecule electronic devices, in which a nanometer-scale molecule is connected to macroscopic leads, requires the reproducible production of highly ordered nanoscale gaps in which a molecule of interest is electrostatically coupled to nearby gate electrodes. Understanding how the molecule-gate coupling depends on key parameters is crucial for the development of high-performance devices. Here we directly address this, presenting two- and three-dimensional finite-element electrostatic simulations of the electrode geometries formed using emerging fabrication techniques. We quantify the gate coupling intrinsic to these devices, exploring the roles of parameters believed to be relevant to such devices. These include the thickness and nature of the dielectric used, and the gate screening due to different device geometries. On the single-molecule (~1nm) scale, we find that device geometry plays a greater role in the gate coupling than the dielectric constant or the thickness of the insulator. Compared to the typical uniform nanogap electrode geometry envisioned, we find that non-uniform tapered electrodes yield a significant three orders of magnitude improvement in gate coupling. We also find that in the tapered geometry the polarizability of a molecular channel works to enhance the gate coupling

Controlling surface statistical properties using bias voltage: Atomic force microscopy and stochastic analysis

The effect of bias voltages on the statistical properties of rough surfaces has been studied using atomic force microscopy technique and its stochastic analysis. We have characterized the complexity of the height fluctuation of a rough surface by the stochastic parameters such as roughness exponent, level crossing, and drift and diffusion coefficients as a function of the applied bias voltage. It is shown that these statistical as well as microstructural parameters can also explain the macroscopic property of a surface. Furthermore, the tip convolution effect on the stochastic parameters has been examined.Comment: 8 pages, 11 figures

Residual Stress Relaxation Induced by Mass Transport Through Interface of the Pd/SrTiO3

Metal interconnections having a small cross-section and short length can be subjected to very large mass transport due to the passing of high current densities. As a result, nonlinear diffusion and electromigration effects which may result in device failure and electrical instabilities may be manifested. Various thicknesses of Pd were deposited over SrTiO3 substrate. Residual stress of the deposited film was evaluated by measuring the variation of d-spacing versus sin2ψ through conventional X-ray diffraction method. It has been found that the lattice misfit within film and substrate might be relaxed because of mass transport. Besides, the relation between residual intrinsic stress and oxygen diffusion through deposited film has been expressed. Consequently, appearance of oxide intermediate layer may adjust interfacial characteristics and suppress electrical conductivity by increasing electron scattering through metallic films

Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO2

Dynamic scaling behavior has been observed during the room-temperature growth of sputtered Au films on SiO2using the atomic force microscopy technique. By the analyses of the dependence of the roughness, σ, of the surface roughness power,P(f), and of the correlation length,ξ, on the film thickness,h, the roughness exponent,α = 0.9 ± 0.1, the growth exponent,β = 0.3 ± 0.1, and the dynamic scaling exponent,z = 3.0 ± 0.1 were independently obtained. These values suggest that the sputtering deposition of Au on SiO2at room temperature belongs to a conservative growth process in which the Au grain boundary diffusion plays a dominant role