Optical properties of metallic (III,Mn)V ferromagnetic semiconductors in the infrared to visible range

We report on a study of the ac conductivity and magneto-optical properties of metallic ferromagnetic (III,Mn)V semiconductors in the infrared to visible spectrum. Our analysis is based on the successful kinetic exchange model for (III,Mn)V ferromagnetic semiconductors. We perform the calculations within the Kubo formalism and treat the disorder effects pertubatively within the Born approximation, valid for the metallic regime. We consider an eight-band Kohn-Luttinger model (six valence bands plus two conduction bands) as well as a ten-band model with additional dispersionless bands simulating phenomenologically the upper-mid-gap states induced by antisite and interstitial impurities. These models qualitatively account for optical-absorption experiments and predict new features in the mid-infrared Kerr angle and magnetic-circular-dichroism properties as a function of Mn concentration and free carrier density.Comment: 10 pages, 7 figures, some typos correcte

A Substellar Companion to the Intermediate-Mass Giant 11 Com

We report the detection of a substellar companion orbiting the intermediate-mass giant star 11 Com (G8 III). Precise Doppler measurements of the star from Xinglong station and Okayama Astrophysical Observatory (OAO) revealed Keplerian velocity variations with an orbital period of 326.03 +/- 0.32 days, a semiamplitude of 302.8 +/- 2.6 m/s, and an eccentricity of 0.231 +/- 0.005. Adopting a stellar mass of 2.7 +/- 0.3 M_solar, the minimum mass of the companion is 19.4 +/- 1.5 M_Jup, well above the deuterium burning limit, and the semimajor axis is 1.29 +/- 0.05 AU. This is the first result from the joint planet search program between China and Japan aiming at revealing statistics of substellar companions around intermediate-mass giants. 11 Com b emerged from 300 targets of the planet search program at OAO. The current detection rate of a brown dwarf candidate seems to be comparable to that around solar-type stars within orbital separations of $\sim$3 AU.Comment: 19 pages, 4 figures, accepted by Ap

Attributes Affecting User Decision to Adopt a Virtual Private Network (VPN) App

© 2020, Springer Nature Switzerland AG. A Virtual Private Network (VPN) helps to mitigate security and privacy risks of data transmitting on unsecured network such as public Wi-Fi. However, despite awareness of public Wi-Fi risks becoming increasingly common, the use of VPN when using public Wi-Fi is low. To increase adoption, understanding factors driving user decision to adopt a VPN app is an important first step. This study is the first to achieve this objective using discrete choice experiments (DCEs) to elicit individual preferences of specific attributes of a VPN app. The experiments were run in the United Kingdom (UK) and Japan (JP). We first interviewed participants (15 UK, 17 JP) to identify common attributes of a VPN app which they considered important. The results were used to design and run a DCE in each country. Participants (149 UK, 94 JP) were shown a series of two hypothetical VPN apps, varying in features, and were asked to choose one which they preferred. Customer review rating, followed by price of a VPN app, significantly affected the decision to choose which VPN app to download and install. A change from a rating of 3 to 4–5 stars increased the probability of choosing an app by 33% in the UK and 14% in Japan. Unsurprisingly, price was a deterrent. Recommendations by friends, source of product reviews, and the presence of in-app ads also played a role but to a lesser extent. To actually use a VPN app, participants considered Internet speed, connection stability, battery level on mobile devices, and the presence of in-app ads as key drivers. Participants in the UK and in Japan prioritized these attributes differently, suggesting possible influences from cultural differences

Desorption of CO from individual ruthenium porphyrin molecules on a copper surface via an inelastic tunnelling process.

The coordination of CO to metalloporphyrins changes their electronic and magnetic properties. Here we locally desorb CO molecules from a single ruthenium tetraphenylporphyrin carbonyl (CO-RuTPP) on Cu(110) using STM. The desorption is triggered by the injection of holes into the occupied states of the adsorbate using an unusual two-carrier process

High-Temperature Hall Effect in Ga(1-x)Mn(x)As

The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the Curie-Weiss law, a spontaneous Hall coefficient proportional to rho_xx^2(T), and including a constant diamagnetic contribution in the susceptibility. For all low resistivity samples this model provides excellent fits to the measured data up to T=380K and allows extraction of the hole concentration (p). The calculated p are compared to alternative methods of determining hole densities in these materials: pulsed high magnetic field (up to 55 Tesla) technique at low temperatures (less than the Curie temperature), and electrochemical capacitance- voltage profiling. We find that the Anomalous Hall Effect (AHE) contribution to rho_xy is substantial even well above the Curie temperature. Measurements of the Hall effect in this temperature regime can be used as a testing ground for theoretical descriptions of transport in these materials. We find that our data are consistent with recently published theories of the AHE, but they are inconsistent with theoretical models previously used to describe the AHE in conventional magnetic materials.Comment: 6 pages, 5 figures, 1 table. Accepted to Phys.Rev.

Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films

We have performed a systematic investigation of magnetotransport of a series of as-grown and annealed Ga1-xMnxAs samples with 0.011 <= x <= 0.09. We find that the anisotropic magnetoresistance (AMR) generally decreases with increasing magnetic anisotropy, with increasing Mn concentration and on low temperature annealing. We show that the uniaxial magnetic anisotropy can be clearly observed from AMR for the samples with x >= 0.02. This becomes the dominant anisotropy at elevated temperatures, and is shown to rotate by 90o on annealing. We find that the in-plane longitudinal resistivity depends not only on the relative angle between magnetization and current direction, but also on the relative angle between magnetization and the main crystalline axes. The latter term becomes much smaller after low temperature annealing. The planar Hall effect is in good agreement with the measured AMR indicating the sample is approximately in a single domain state throughout most of the magnetisation reversal, with a two-step magnetisation jump ascribed to domain wall nucleation and propagation.Comment: 27 pages, 8 figures, accepted by Phys. Rev.

Anisotropic Magnetoresistance in Ga1−x_{1-x}Mnx_xAs

We have measured the magnetoresistance in a series of Ga$_{1-x}$Mn$_x$As samples with 0.033$\le x \le$ 0.053 for three mutually orthogonal orientations of the applied magnetic field. The spontaneous resistivity anisotropy (SRA) in these materials is negative (i.e. the sample resistance is higher when its magnetization is perpendicular to the measuring current than when the two are parallel) and has a magnitude on the order of 5% at temperatures near 10K and below. This stands in contrast to the results for most conventional magnetic materials where the SRA is considerably smaller in magnitude for those few cases in which a negative sign is observed. The magnitude of the SRA drops from its maximum at low temperatures to zero at T$_C$ in a manner that is consistent with mean field theory. These results should provide a significant test for emerging theories of transport in this new class of materials.Comment: 4 pages with 4 figures. Submitted to Physical Review

Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T_c in high-quality metallic samples increases linearly with the number of uncompensated local moments on Mn_Ga acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistnent with the picture in which Mn impurities incorporated during growth at interstitial Mn_I positions act as double-donors and compensate neighboring Mn_Ga local moments because of strong near-neighbor Mn_Ga-Mn_I antiferromagnetic coupling. These defects can be efficiently removed by post-growth annealing. Our analysis suggests that there is no fundamental obstacle to substitutional Mn_Ga doping in high-quality materials beyond our current maximum level of 6.2%, although this achievement will require further advances in growth condition control. Modest charge compensation does not limit the maximum Curie temperature possible in ferromagnetic semiconductors based on (Ga,Mn)As.Comment: 13 pages, 12 figures, submitted to Phys. Rev.

Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p = 3.5x10^20 cm ^-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed with the use of the above value of p, which gave the magnitude of p-d exchange energy |N0beta | ~ 1.5 eV.Comment: PDF file, 8 pages, 4 figure