Chemical and vibratory signals used in alarm communication in the termite Reticulitermes flavipes (Rhinotermitidae)

Termites have evolved diverse defence strategies to protect themselves against predators, including a complex alarm communication system based on vibroacoustic and/or chemical signals. In reaction to alarm signals, workers and other vulnerable castes flee away while soldiers, the specialized colony defenders, actively move toward the alarm source. In this study, we investigated the nature of alarm communication in the pest Reticulitermes flavipes. We found that workers and soldiers of R. flavipes respond to various danger stimuli using both vibroacoustic and chemical alarm signals. Among the danger stimuli, the blow of air triggered the strongest response, followed by crushed soldier head and light flash. The crushed soldier heads, which implied the alarm pheromone release, had the longest-lasting effect on the group behaviour, while the responses to other stimuli decreased quickly. We also found evidence of a positive feedback, as the release of alarm pheromones increased the vibratory communication among workers and soldiers. Our study demonstrates that alarm modalities are differentially expressed between castes, and that the response varies according to the nature of stimuli

The influence of thermal insulation selection on a facade sound insulation property - theoretical case study

Impact of the external thermal insulation composite system (ETICS) on the sound reduction index improvement is widely discussed topic. ETICSs are already several years commonly used to reduce buildings thermal loses. However, its application can negatively influence facades sound insulation properties. In the high frequency range an additional thermal insulating layer improves the sound insulation property. However, in the low frequency range the sound insulation spectra rather often decrease. This decrease is caused by a mass - spring - mass resonance of the ETICS system. Location and the depth of resonance dip depend on the ETICS composition. Several prediction models and measurement-based case studies were published already. In this contribution, an analytical model is used to predict the sound reduction index, using a measured dynamic stiffness of the ETICS system. A number of different thermal insulating layers are analysed having similar thermal properties but different material dynamic stiffnesses and loss factors. The comparison of theoretically predicted sound insulation spectra and the impact of the dynamic stiffness measurement technique are presented.status: submitte

Toward an Insulator-to-Metal Transition (IMT) in VOx Deposited by ALD: Huge Effect on Large IR Transmission Range

International audienceVanadium dioxide (VO2) exhibits an insulating-to-metallic transition (IMT) from an insulating monoclinic to a metallic rutile phase at a IMT temperature (TIMT) of about 68 °C. This transition is accompanied by a decrease in electrical resistivity of 5 orders of magnitude and a drastic change in optical properties. Until recently, several works described the fundamental nature of the phase transition in a contradictory way, attributing it either to a structure-induced electron-phonon interaction: the Peierls transition [1], or to a strong electron-electron correlation: the Mott transition [2]. Nowadays, theoretical and experimental results [3-6] tend to show that the phase transition is affected by the crystal and electronic structures according to a mechanism combining the two opposed mechanisms and thus called collaborative Mott-Peierls transition.In order to achieve the growth of high-quality and conformal VO2 thin films and with a low thermal budget, Atomic Layer Deposition (ALD) is one of the most suitable ones, among physical and chemical vapor deposition techniques [7]. In this aim, vanadium oxide (VOx) films were deposited on both silicon (100) and glass substrates (figure with and without VOx) at 240°C using vanadium tri-isopropoxide (VTIP) asV-precursor and water as oxydant reagent. Deposited films, with thicknesses ranging from 30 nm to 120 nm depending on the number of ALD cycles, were annealed during one hour under a reducing atmosphere (forming gas) at four temperatures ranging from 400°C to 550°C with 50°C steps. Thanks to X-ray diffraction (XRD), and transmission electron microscopy (TEM), unannealed films were found amorphous independently of the substrate. Annealed films were found polycrystalline with a mixture of both VO2 and V2O5 (or V6O13) phases with crystallite lateral size up to 300 nm. RBS analysis showed how the chemical stoichiometry evolves with annealing temperature. The V content remains constant with annealing temperature while the O content and the film density were both decreasing under reducing conditions. By means of XPS measurements, at a temperature below TIMT, different valence states of V element were identified with a majority of V4+ ions and a minority of V3+ and V5+ ions. At a temperature above TIMT, a valence state modification occurs with a reduction of the V4+ ion concentration in favor of the V3+ and V5+ones. Cooling back under TIMT led almost to the same valence states initial reorganization with a majority of V4+.The variation of electrical and optical properties of VOx films occurring during IMT was also investigated. It was found that the resistivity r decreased down to 10-1 Ω.cm with a rising temperature above TIMT, and the r rose again with decreasing temperature with a hysteresis by contrast to the first drop. Dramatically, the optical transmittances of VOx films on Si wafer, measured with FTIR, displayed an important reduction during IMT of almost 70% in a broad spectral range from 2 to 20 µm wavelength. The optical properties of VOx on a glass substrate in UV-visible spectral range at IMT evidenced a modification of dielectric constant at IMT. Raman spectroscopy of VOx films around IMT showed the disappearance of low-temperature VO2 peaks, characteristic for this transition.In conclusion, crystalline VOx films were successfully produced by an ALD process and subsequent annealing at 500°C leading to films with reversible and reproducible IMT occurring at ~70°C. The important variation of some electrical or optical properties in infrared range paves the way for the light and heat monitoring in many applications including thermal stealth, heat management, tunable thermochromic or electrochromic windows

Combining advanced photoelectron spectroscopy approaches to analyse deeply buried GaP(As)/Si(1 0 0) interfaces: Interfacial chemical states and complete band energy diagrams

The epitaxial growth of the polar GaP(1 0 0) on the nonpolar Si(1 0 0) substrate suffers from inevitable defects at the antiphase domain boundaries (APDs), resulting from mono-atomic steps on the Si(1 0 0) surface. Stabilization of Si(1 0 0) substrate surfaces with As is a promising technological step enabling the preparation of Si substrates with double atomic steps and reduced density of the APDs. In this paper, 4–50-nm-thick GaP epitaxial films were grown on As-terminated Si(1 0 0) substrates with different types of doping, miscuts, and As-surface termination by metalorganic vapor phase epitaxy (MOVPE). The GaP(As)/Si(1 0 0) heterostructures were investigated by X-ray photoelectron spectroscopy (XPS) combined with gas cluster ion beam (GCIB) sputtering and by hard X-ray photoelectron spectroscopy (HAXPES). We found residuals of As atoms in the GaP lattice (∼0.2–0.3 at.%) and a localization of As atoms at the GaP(As)/Si(1 0 0) interface (∼1 at.%). Deconvolution of core level peaks revealed interface core level shifts. In As core levels, chemical shifts between 0.5 and 0.8 eV were measured and identified by angle-resolved XPS measurements. Similar valence band offset (VBO) values of 0.6 eV were obtained, regardless of the doping type of Si substrate, Si substrate miscut or type of As-terminated Si substrate surface. The band alignment diagram of the GaP(As)/Si(1 0 0) heterostructure was deduced

Toward an Insulator-to-Metal Transition (IMT) in VOx Deposited by ALD: Huge Effect on Large IR Transmission Range

International audienc