Template nanowires for spintronics applications: nanomagnet microwave resonators functioning in zero applied magnetic field

Low-cost spintronic devices functioning in zero applied magnetic field are required for bringing the idea of spin-based electronics into the real-world industrial applications. Here we present first microwave measurements performed on nanomagnet devices fabricated by electrodeposition inside porous membranes. In the paper, we discuss in details a microwave resonator consisting of three nanomagnets, which functions in zero external magnetic field. By applying a microwave signal at a particular frequency, the magnetization of the middle nanomagnet experiences the ferromagnetic resonance (FMR), and the device outputs a measurable direct current (spin-torque diode effect). Alternatively, the nanodevice can be used as a microwave oscillator functioning in zero field. In order to test the resonators at microwave frequencies, we developed a simple measurement set-up.Comment: 21 pages (main text - 13 pages + Supporting Information

Optically switched magnetism in photovoltaic perovskite CH3_3NH3_3(Mn:Pb)I3_3

The demand for ever-increasing density of information storage and speed of manipulation boosts an intense search for new magnetic materials and novel ways of controlling the magnetic bit. Here, we report the synthesis of a ferromagnetic photovoltaic CH$_3$NH$_3$(Mn:Pb)I$_3$ material in which the photo-excited electrons rapidly melt the local magnetic order through the Ruderman-Kittel-Kasuya-Yosida interactions without heating up the spin system. Our finding offers an alternative, very simple and efficient way of optical spin control, and opens an avenue for applications in low power, light controlling magnetic devices

Atomic and Electronic Structure of a Rashba pp-nn Junction at the BiTeI Surface

The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries between domains with different surface terminations. We use scanning tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and investigate their atomic and electronic properties. The Te- and I-terminated surfaces are identified owing to their distinct chemical reactivity, and an apparent height mismatch of electronic origin. The Rashba surface states are revealed in the STS spectra by the onset of a van Hove singularity at the band edge. Eventually, an electronic depletion is found on interfacial Te atoms, consistent with the formation of a space charge area in typical $p$-$n$ junctions.Comment: 5 pages, 4 figure

Strong out-of-plane magnetic anisotropy of Fe adatoms on Bi2_2Te3_3

The electronic and magnetic properties of individual Fe atoms adsorbed on the surface of the topological insulator Bi$_2$Te$_3$(111) are investigated. Scanning tunneling microscopy and spectroscopy prove the existence of two distinct types of Fe species, while our first-principles calculations assign them to Fe adatoms in the hcp and fcc hollow sites. The combination of x-ray magnetic circular dichroism measurements and angular dependent magnetization curves reveals out-of-plane anisotropies for both species with anisotropy constants of $K_{\text{fcc}} = (10 \pm 4)$ meV/atom and $K_{\text{hcp}} = (8 \pm 4)$ meV/atom. These values are well in line with the results of calculations.Comment: 6 pages, 3 figure

BiTeCl and BiTeBr: a comparative high-pressure optical study

We here report a detailed high-pressure infrared transmission study of BiTeCl and BiTeBr. We follow the evolution of two band transitions: the optical excitation $\beta$ between two Rashba-split conduction bands, and the absorption $\gamma$ across the band gap. In the low pressure range, $p< 4$~GPa, for both compounds $\beta$ is approximately constant with pressure and $\gamma$ decreases, in agreement with band structure calculations. In BiTeCl, a clear pressure-induced phase transition at 6~GPa leads to a different ground state. For BiTeBr, the pressure evolution is more subtle, and we discuss the possibility of closing and reopening of the band gap. Our data is consistent with a Weyl phase in BiTeBr at 5$-$6~GPa, followed by the onset of a structural phase transition at 7~GPa.Comment: are welcom

Experimentally Engineering the Edge Termination of Graphene Nanoribbons

The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high quality GNRs via hydrogen plasma etching. Using a combination of high-resolution scanning tunneling microscopy and first-principles calculations, we have determined the exact atomic structure of plasma-etched GNR edges and established the chemical nature of terminating functional groups for zigzag, armchair and chiral edge orientations. We find that the edges of hydrogen-plasma-etched GNRs are generally flat, free of structural reconstructions and are terminated by hydrogen atoms with no rehybridization of the outermost carbon edge atoms. Both zigzag and chiral edges show the presence of edge states.Comment: 16+9 pages, 3+4 figure

Magnetic excitations and electronic interactions in Sr2_2CuTeO6_6: a spin-1/2 square lattice Heisenberg antiferromagnet

Sr$_2$CuTeO$_6$ presents an opportunity for exploring low-dimensional magnetism on a square lattice of $S=1/2$ Cu$^{2+}$ ions. We employ ab initio multi-reference configuration interaction calculations to unravel the Cu$^{2+}$ electronic structure and to evaluate exchange interactions in Sr$_2$CuTeO$_6$. The latter results are validated by inelastic neutron scattering using linear spin-wave theory and series-expansion corrections for quantum effects to extract true coupling parameters. Using this methodology, which is quite general, we demonstrate that Sr$_2$CuTeO$_6$ is an almost realization of a nearest-neighbor Heisenberg antiferromagnet but with relatively weak coupling of 7.18(5) meV.Comment: 10 pages, 7 figure

Density functional investigations of defect induced mid-gap states in graphane

We have carried out ab initio electronic structure calculations on graphane (hydrogenated graphene) with single and double vacancy defects. Our analysis of the density of states reveal that such vacancies induce the mid gap states and modify the band gap. The induced states are due to the unpaired electrons on carbon atoms. Interestingly the placement and the number of such states is found to be sensitive to the distance between the vacancies. Furthermore we also found that in most of the cases the vacancies induce a local magnetic moment.Comment: 15 page

Universal Magnetic Properties of sp3^3-type Defects in Covalently Functionalized Graphene

Using density-functional calculations, we study the effect of sp$^3$-type defects created by different covalent functionalizations on the electronic and magnetic properties of graphene. We find that the induced magnetic properties are {\it universal}, in the sense that they are largely independent on the particular adsorbates considered. When a weakly-polar single covalent bond is established with the layer, a local spin-moment of 1.0 $\mu_B$ always appears in graphene. This effect is similar to that of H adsorption, which saturates one $p_z$ orbital in the carbon layer. The magnetic couplings between the adsorbates show a strong dependence on the graphene sublattice of chemisorption. Molecules adsorbed at the same sublattice couple ferromagnetically, with an exchange interaction that decays very slowly with distance, while no magnetism is found for adsorbates at opposite sublattices. Similar magnetic properties are obtained if several $p_z$ orbitals are saturated simultaneously by the adsorption of a large molecule. These results might open new routes to engineer the magnetic properties of graphene derivatives by chemical means