Epitaxial growth mechanisms of graphene and effects of substrates

Cataloged from PDF version of article.The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-heptagon defects. The activation barriers for the healing of these growth induced defects on various substrates are calculated using the climbing image nudge elastic band method and compared with that of the Stone-Wales defect. It is found that the healing of pentagon-heptagon defects occurring near the edge in the course of growth is much easier than that of Stone-Wales defect. The role of the substrate in the epitaxial growth and in the healing of defects are also investigated in detail, along with the effects of using carbon dimers as the building blocks of graphene growth

Dissociative adsorption of molecules on graphene and silicene

Cataloged from PDF version of article.We study the interaction of H-2 , O-2 , CO, H-2 O and OH molecules with the vacancy defects of graphene and silicene. Atoms around the bare vacancy reconstruct and specific chemically active sites are created. While H-2 , O-2 and CO remain intact on both pristine graphene and silicene, these molecules can dissociate when they are placed at the close proximity of these chemically active sites and nucleate centers for the hydrogenation and oxygenation. Saturation of the dangling bonds at the defect sites by constituent atoms of dissociated molecules gives rise to significant modification of electronic and magnetic properties. We analyzed the mechanism of the dissociation and revealed a concerted action of surrounding host atoms together with dissociated molecules to lower the energy barrier needed for dissociation. The dissociations of H-2 O and OH are hindered by high energy barriers. Our study suggests that graphene and silicene can be functionalized by creating meshes of single vacancy, where specific molecules can dissociate, while some other molecules can be pinned

Effect of Yttrium substitution on superconductivity in Bi-2212 textured rods prepared by a LFZ technique

In this study, the physical and superconducting properties of the Bi2Sr2Ca1-xYxCu2O8+delta with x=0.0, 0.05, 0.075 0.1, and 0.20 textured superconducting rods prepared by a laser floating zone technique were presented. The effects of Y3+ substitution for Ca2+ have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), dc-magnetization, magnetic hysteresis and critical current density calculation by using the Bean''s critical state model. The powder XRD patterns of the samples have shown the Bi-2212 phase is the major one. Along with the powder samples, the textured rod surfaces also were investigated by XRD. The grains found to be well-oriented along the longitudinal rod axis which is a typical result for superconductors prepared by laser floating zone (LFZ) method, has been observed. The best critical temperature, T-C, has been found as 92.9 K for the sample with 0.15Y substitution, under DC magnetic field of 50 Oe in ZFC mode. It has also been observed that the critical current density decreases with increasing Y-substitution. Using those values, the maximum J(C) value has been determined as 2.37 x 10(5) A/cm(2) for the undoped sample

Electron transport properties in Al0.25Ga0.75N/AIN/GaN hetrostructures with different InGaN back barrier layers and GaN channel thickness grown by MOCVD

Cataloged from PDF version of article.The electron transport properties in Al0.25Ga0.75N/AlN/GaN/InxGa1-xN/GaN double heterostructures with various indium compositions and GaN channel thicknesses were investigated. Samples were grown on c-plane sapphire substrates by MOCVD and evaluated using variable temperature Hall effect measurements. In order to understand the observed transport properties, various scattering mechanisms, such as acoustic phonon, optical phonon, interface roughness, background impurity, and alloy disorder, were included in the theoretical model that was applied to the temperature-dependent mobility data. It was found that low temperature (T 160 K), optical phonon scattering is the dominant scattering mechanism for AlGaN/AlN/GaN/InGaN/GaN heterostructures. The higher mobility of the structures with InGaN back barriers was attributed to the large conduction band discontinuity obtained at the channel/buffer interface, which leads to better electron confinement. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD

Cataloged from PDF version of article.We investigate the structural and electrical properties of AlxIn1-xN/AlN/GaN heterostructures with AlGaN buffers grown by MOCVD, which can be used as an alternative to AlInN HEMT structures with GaN buffer. The effects of the GaN channel thickness and the addition of a content graded AlGaN layer to the structural and electrical characteristics were studied through variable temperature Hall effect measurements, high resolution XRD, and AFM measurements. Enhancement in electron mobility was observed in two of the suggested AlxIn1-xN/AlN/GaN/Al0.04Ga0.96N heterostructures when compared to the standard AlxIn1-xN/AlN/GaN heterostructure. This improvement was attributed to better electron confinement in the channel due to electric field arising from piezoelectric polarization charge at the Al0.04Ga0.96N/GaN heterointerface and by the conduction band discontinuity formed at the same interface. If the growth conditions and design parameters of the AlxIn1-xN HEMT structures with AlGaN buffers can be modified further, the electron spillover from the GaN channel can be significantly limited and even higher electron mobilities, which result in lower two-dimensional sheet resistances, would be possible. (C) 2012 Elsevier B.V. All rights reserved

Effects of thermal annealing on the morphology of the AlxGa(1x)N films

Cataloged from PDF version of article.Effects of thermal annealing on the morphology of the AlxGa(1-x)N films with two different high Al-contents (x=0.43 and 0.52) have been investigated by atomic force microscopy (AFM). The annealing treatments were performed in a nitrogen (N-2) gas ambient as short-time (4 min) and long-time (30 min). Firstly, the films were annealed as short-time in the range of 800-950 degrees C in steps of 50-100 degrees C. The surface root-mean-square (rms) roughness of the films reduced with increasing temperature at short-time annealing (up to 900 degrees C), while their surface morphologies were not changed. At the same time, the degradation appeared on the surface of the film with lower Al-content after 950 degrees C. Secondly, the Al0.43Ga0.57N film was annealed as long-time in the range of 1000-1200 degrees C in steps of 50 degrees C. The surface morphology and rms roughness of the film with increasing temperature up to 1150 degrees C did not significantly change. Above those temperatures, the surface morphology changed from step-flow to grain-like and the rms roughness significantly increased. (C) 2009 Elsevier Ltd. All rights reserved

Characterization of a novel zebrafish (Danio rerio) gene, wdr81, associated with cerebellar ataxia, mental retardation and dysequilibrium syndrome (CAMRQ)

Background: WDR81 (WD repeat-containing protein 81) is associated with cerebellar ataxia, mental retardation and disequilibrium syndrome (CAMRQ2, [MIM 610185]). Human and mouse studies suggest that it might be a gene of importance during neurodevelopment. This study aimed at fully characterizing the structure of the wdr81 transcript, detecting the possible transcript variants and revealing its expression profile in zebrafish, a powerful model organism for studying development and disease. Results: As expected in human and mouse orthologous proteins, zebrafish wdr81 is predicted to possess a BEACH (Beige and Chediak-Higashi) domain, a major facilitator superfamily domain and WD40-repeats, which indicates a conserved function in these species. We observed that zebrafish wdr81 encodes one open reading frame while the transcript has one 5' untranslated region (UTR) and the prediction of the 3' UTR was mainly confirmed along with a detected insertion site in the embryo and adult brain. This insertion site was also found in testis, heart, liver, eye, tail and muscle, however, there was no amplicon in kidney, intestine and gills, which might be the result of possible alternative polyadenylation processes among tissues. The 5 and 18 hpf were critical timepoints of development regarding wdr81 expression. Furthermore, the signal of the RNA probe was stronger in the eye and brain at 18 and 48 hpf, then decreased at 72 hpf. Finally, expression of wdr81 was detected in the adult brain and eye tissues, including but not restricted to photoreceptors of the retina, presumptive Purkinje cells and some neurogenic brains regions. Conclusions: Taken together these data emphasize the importance of this gene during neurodevelopment and a possible role for neuronal proliferation. Our data provide a basis for further studies to fully understand the function of wdr81. © 2015 Doldur-Balli et al

Germ line BRCA1 and BRCA2 gene mutations in Turkish breast cancer patients

Cataloged from PDF version of article.Germ line BRCA1 and/or BRCA2 mutations were screened in 50 Turkish breast and/or ovarian cancer patients composed of hereditary, familial, early onset and male cancer groups. Genomic DNA samples were tested by heteroduplex analysis and DNA sequencing. Two truncating BRCA2 mutations, one novel (6880 insG) and one previously reported (3034 delAAAC), were found in two out of six (33%) hereditary breast and/or ovarian cancer patients. A novel truncating (1200 insA) and a missense (2080A→G) BRCA1 mutation was found in two of 27 (7%) individuals in the early onset group. A total of four (8%) disease-causing mutations in 50 breast cancer patients were identified in BRCA1 and BRCA2 genes. In addition, five BRCA1 sequence variants have been identified in 23 patients. These results indicate that BRCA1 and BRCA2 genes are involved in some, but not all, forms of hereditary predisposition to breast cancer in the Turkish population. Copyright (C) 2000

Early postzygotic mutations contribute to de novo variation in a healthy monozygotic twin pair

Cataloged from PDF version of article.Background: Human de novo single-nucleotide variation (SNV) rate is estimated to range between 0.82-1.70×10-8 mutations per base per generation. However, contribution of early postzygotic mutations to the overall human de novo SNV rate is unknown. Methods: We performed deep whole-genome sequencing (more than 30-fold coverage per individual) of the whole-blood-derived DNA samples of a healthy monozygotic twin pair and their parents. We examined the genotypes of each individual simultaneously for each of the SNVs and discovered de novo SNVs regarding the timing of mutagenesis. Putative de novo SNVs were validated using Sanger-based capillary sequencing. Results: We conservatively characterised 23 de novo SNVs shared by the twin pair, 8 de novo SNVs specific to twin I and 1 de novo SNV specific to twin II. Based on the number of de novo SNVs validated by Sanger sequencing and the number of callable bases of each twin, we calculated the overall de novo SNV rate of 1.31×10-8 and 1.01×10-8 for twin I and twin II, respectively. Of these, rates of the early postzygotic de novo SNVs were estimated to be 0.34×10-8 for twin I and 0.04×10-8 for twin II. Conclusions: Early postzygotic mutations constitute a substantial proportion of de novo mutations in humans. Therefore, genome mosaicism resulting from early mitotic events during embryogenesis is common and could substantially contribute to the development of diseases

Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers

The effects of the In-mole fraction (x) of an InxGa 1-xN back barrier layer and the thicknesses of different layers in pseudomorphic AlyGa1-yN/AlN/GaN/InxGa 1-xN/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear SchrdingerPoisson equations. Strain relaxation limits were also calculated for the investigated AlyGa1-yN barrier layer and InxGa1-xN back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed. © 2011 Elsevier B.V. All rights reserved