Comprehending Inclinations Towards Autonomous Vehicles

Many of today's autonomous vehicle (AVs) improvements involve overcoming technology barriers to AV readiness. However, once AVs are out, acceptance and people's willingness (APW) to use remain a concern. As a result, the question arises. Are we attentive enough towards humans' aspects in the evolution of AV technology? Do we need to? The present dilemma around autonomous vehicles is of their acceptance rather than technological advancements. Many academics have investigated autonomous vehicles using questionnaires and different studies to discover how individuals can act. The issue is that individuals do not always do what they say, which does not usually describe a definite image. Nevertheless, on the other hand, we believe psychological aspects signify people's state of being. So, as a response, we seek to attain an understanding by studying human psychological aspects. This study seeks to streamline interdependency between human psychological elements and how people receive the information through various mediums and channels. With these two aspects combined, we attempt to comprehend people's inclinations towards AVs. The study resulted in a theoretical comparative estimation table (CET) and CET Hierarchical Concept Map through our reviewed literature. The study thus intended to understand the riddle of acceptability via people's psychological elements through the proposed extended theoretical comparative estimation table (CET) table. Further, through the application of the extended CET table, we present our findings comprised of our studied references with the visualization to showcase the people's viewpoints on the tendency towards autonomous vehicles. We believe the study provides vision and puts psychological elements into consideration of tackling challenges and skeptical side of concerns of APW of AVs. It also fosters interested future researchers to comprehend APW challenges better with corresponding attributes used in the CET table and CET Hierarchical Concept Map

Green Synthesis of Silver Nanoparticle in Calotropis Procera flower extract and its application for Fe2+sensing in aqueous solution

The silver nanoparticles (AgNPs) was synthesized in Calotropis procera extract. The synthesized AgNPs were characterized by UV–vis spectoscopy, dynamic light scattering (DLS)and transmission electron microscopy (TEM). DLS and TEM analysis of the synthesized AgNPs clearly showed the nanoscale particle size distribution having spherical shaped morphology. The color change and spectral shift in absorption spectrum after addition of Fe2+ ion to AgNPs solution develop a simple and quick method for quantitative determination of Fe2+ from aqueous solution without any interference from excipients. The selective adsorption of Fe2+ ions over the nano particle surface and mechanism of binding was supported by Langmuir adsorption plot, zeta sizer and absorption titration results. The results suggest that the synthesized AgNPs to be used as an ideal, eco-friendly nano probe for selective and sensitive detection of Fe2+ ion in aqueous medium based on adsorption studies. The present method successfully applied for the quantitative analysis of Fe2+ ion in samples collected from local area having limit of detection 4.29 µg/mL. The method offers a simple, selective, economical approach for quantitative detection of Fe2+ in environmental samples without any pretreatment

Smile designing using recurring esthetic dental proportion and aesthetic pre-evaluative temporary technique with porcelain laminate veneers: a case report

Beautiful confident smile has a positive impact on the psychosocial well-being of patients. Spacing present in the anterior region makes a patient feel dissatisfied with their smile. Over the years, a number of innovative techniques have been described in the treatment of patient having spaces between teeth in the anterior region. However, a less invasive and short-time treatment procedure with satisfactory result is preferred by the patient. Laminates have a unique position in today’s dental practice. These conservative restorations are especially important for young permanent dentitions. Porcelain veneers can be considered to be very much in cosmetic dentistry because they deal innumerable advantages over any previous form of veneering systems. This case report described the technique of closure of spaces between teeth in the anterior region by applying recurring esthetic dental (RED) proportion and aesthetic pre-evaluative temporary (APT) technique for smile designing using laminates. The RED proportion has been stated to be an essential tool for achieving esthetics and harmony in smile. The APT technique facilitated diagnosis, communication, and preparation, providing predictability for the restorative treatment. Limiting the preparation depth to the enamel surface significantly increases the performance of porcelain laminate veneers

Evaluating the effect on tensile bond strength between commonly used acrylic denture base material lined with two variety of soft liners after using three varieties of denture cleansers-an in vitro study

Background: Long-term use of denture causes significant changes in its supporting structures and can lead to constant pain and discomfort. Soft lining material extensively used in field of prosthodontics to improve fit of conventional acrylic resin denture for restoring optimal health of abused oral tissue showing degenerative change. Method: Specially designed metal mould used for fabrication of 80 acrylic resin blocks. Applying soft liner between 2 acrylic sample using metal mould and grouping these samples for immersion in solution of denture cleansers. These acrylic samples were then divided into 2 groups of 40 samples each for applying 2 variety of soft liner for each group (L1 and L2). Keeping specimen in solution of denture cleanser per day for 8 h keeping each specimen 3 times a day=equals to 3 days treatment. Thus, keeping the specimen for 30 days×3 exposure=amount to 90 days (3 months) exposure and then tensile bond strength measured using universal testing machine (Instron). ANOVA test is applied. Results: Tensile bond strength of Viscogel soft liner with acrylic based is decreased with more Polident denture cleanser followed by Efferdent, Clinsodent and least affected by water which is statistically significant. Conclusions: The clinician should choose denture cleanser by considering the microbiologic properties of cleansers and material aspects such as the compatibility of denture cleanser with soft liners

Modeling, fabrication, and characterization of 2D devices for electronic and photonic applications

Over the last two decades, two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDCs) have invoked tremendous interest of the scientific community due to their unique electronic and optical properties. While TMDCs hold great promise as a potential replacement for silicon for scaling transistors beyond sub-3 nm technology node, graphene holds great potential as transparent electrodes and optical phase-modulators for next-generation photonic devices. In addition to the aforementioned applications, these 2D devices also provide a great platform for studying novel physical phenomena associated with 2D materials such as Moiré interactions, valley-dependent spintronics, and correlated electron physics. In order to realize high-performance 2D material based devices, advancement of three key aspects are imperative - (1) analytical modeling to gauge insights into the electrostatics and current transport in 2D devices, (2) development of efficient techniques for fabricating 2D devices, and (3) understanding the fundamental limitations of the existing characterization techniques and developing better methods. We started by modeling the unique electrostatics of the 2D lateral p-n junctions, wherein we developed analytical expressions for the electric field, electrostatic potential, and depletion width across 2D lateral p-n junctions. We extend these expressions for use in lateral 3D metal-2D semiconductor junctions and lateral 2D heterojunctions. The results show a significantly larger depletion width (~ 2 to 20x) for 2D junctions compared to conventional 3D junctions. Further, we show that the depletion widths at metal-2D semiconductor junctions can be significantly modulated by the surrounding dielectric environment and semiconductor doping density. Finally, we derived a minimal dielectric thickness for a symmetrically-doped 2D lateral p-n junction, above which the out-of-plane simulation region boundaries minimally affect the simulation results. After electrostatics, we attempted to understand the current transport in 2D material-based devices. Typically used back-gated field-effect transistors (BGFETs) are often modeled as Schottky barrier (SB)-MOSFETs assuming that the current flow is limited by the source-contact in the OFF state, while the channel limits the current in the ON state. Here, using an analytical model and drift-diffusion simulations, we show that the channel limits the overall current in the OFF state and vice versa, contrary to past studies. For top-contacted BGFETs, we modeled different current paths at a top-contacted metal-2D semiconductor junction and illustrated the unique “corner effect”—where the potential change and current transport are dominated by the metal-2D semiconductor edge and the associated lateral region. We determined that the edge transport supersedes the vertical current injection in monolayer TMDCs and hence, to reduce contact resistance in 2D devices degenerate doping of channel region next to contact regions is of paramount importance. After developing models to theoretically analyze these devices, we focused on understanding the shortcomings in the existing characterization techniques affecting the extraction of important device parameters such as contact resistance, SBH, and channel mobility. We prove that the transfer length estimated using the standard TLM measurement techniquecan severely overestimate the true transfer length. We also discuss the large discrepancy in SBH values extracted using the Arrhenius method compared to their theoretical values. Using our analytical modeling, we attribute this to the presence of long channel regions in experimental devices. Furthermore, we highlight that the presence of large contact resistance results in underestimation of channel mobilities which renders Kelvin measurements such as four-probe and Hall-bar measurements imperative for 2D devices. Finally, we introduced a unique etch and doping method using self-limiting oxidation which allows us to design and fabricate various high-performance 2D devices. We first used the method to demonstrate a selective, damage-free atomic layer etch (ALE) that enables layer-by-layer removal of monolayer WSe₂ without altering the physical, optical, and electronic properties of the underlying layers. Using a comprehensive set of characterization techniques, we show that the quality of our ALE processed layers is comparable to that of pristine layers of similar thickness. Further, using graphene as a testbed, we demonstrate the use of a sacrificial monolayer WSe₂ layer to protect the channel, which is etched in the final process step in a technique we call Sacrificial WSe₂ with ALE Processing (SWAP). Furthermore, the top oxidized layer acts like an atomically thin degenerate p-type dopant for a large variety of semiconductors such as graphene, carbon nanotubes, and WSe2. We show that the TOS-doped graphene yields a low sheet resistance due to high mobility at a very high hole density that remains active even at 1.5 K. We apply this principle to improve the transmittance of graphene (>99%) at telecommunication bandwidth (1.5 to 1.6 m), that makes it a suitable replacement for Indium tin oxide (ITO) as a transparent electrode

"Mix-in-Place" anonymous networking using secure function evaluation

Anonymous communications systems generally trade off perfor-mance for strong cryptographic guarantees of privacy. However, a number of applications with moderate performance requirements (e.g., chat) may require both properties. In this paper, we develop a new architecture that provides provably unlinkable and efficient communications using a single intermediary node. Nodes partici-pating in these Mix-In-Place Networks (MIPNets) exchange mes-sages through a mailbox in an Oblivious Proxy (OP). Clients lever-age Secure Function Evaluation (SFE) to send and receive their messages from the OP while blindly but reversibly modifying the appearance of all other messages (i.e., mixing in place) in the mail-box. While an Oblivious Proxy will know that a client participated in exchanges, it can not be certain which, if any, messages that client transmitted or received. We implement and measure our pro-posed design using a modified version of Fairplay and note reduc-tions in execution times of greater than 98 % over the naïve applica-tion of garbled circuits. We then develop a chat application on top of the MIPNet architecture and demonstrate its practical use for as many as 100 concurrent users. Our results demonstrate the poten-tial to use SFE-enabled “mixing ” in a single proxy as a means of providing provable deniability for applications with near real-time performance requirements. 1

Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 X 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly