Magnetoresistance and Charge Transport in Graphene Governed by Nitrogen Dopants

We identify the influence of nitrogen-doping on charge- and magnetotransport of single layer graphene by comparing doped and undoped samples. Both sample types are grown by chemical vapor deposition (CVD) and transferred in an identical process onto Si/SiO₂ wafers. We characterize the samples by Raman spectroscopy as well as by variable temperature magnetotransport measurements. Over the entire temperature range, the charge transport properties of all undoped samples are in line with literature values. The nitrogen doping instead leads to a 6-fold increase in the charge carrier concentration up to 4 × 10¹³ cm^–2 at room temperature, indicating highly effective doping. Additionally it results in the opening of a charge transport gap as revealed by the temperature dependence of the resistance. The magnetotransport exhibits a conspicuous sign change from positive Lorentz magnetoresistance (MR) in undoped to large negative MR that we can attribute to the doping induced disorder. At low magnetic fields, we use quantum transport signals to quantify the transport properties. Analyses based on weak localization models allow us to determine an orders of magnitude decrease in the phase coherence and scattering times for doped samples, since the dopants act as effective scattering centers

Reversible Photochemical Control of Doping Levels in Supported Graphene

Controlling the type and density of charge carriers in graphene is vital for a wide range of applications of this material in electronics and optoelectronics. To date, chemical doping and electrostatic gating have served as the two most established means to manipulate the carrier density in graphene. Although highly effective, these two approaches require sophisticated graphene growth or complex device fabrication processes to achieve both the desired nature and the doping densities with generally limited dynamic tunability and spatial control. Here, we report a convenient and tunable optical approach to tune the steady-state carrier density and Fermi energy in graphene by photochemically controlling the concentration of adsorbed molecular O₂, a p-dopant in graphene, using femtosecond pulsed laser irradiation in the UV range. As an all-optical approach, it allows spatial control over doping levels. Combined terahertz (THz) spectroscopy and electrical device measurements reveal that the Fermi level in laser-illuminated graphene can be controllably and reversibly tuned between p- and n-type in a large range (over ∼600 meV from −420 to +180 meV) by readily tuning the peak intensity and the duration of the laser irradiation treatment. Furthermore, we demonstrate that our photochemical approach for doping of graphene allows one to optically write doping structure with spatial control. Given the ease, effectiveness, and simplicity of the method, this photochemical doping mechanism offers a simple, reversible approach to control the steady-state electronic and optical properties of graphene

Data_Sheet_1_Improved connectivity and cognition due to cognitive stimulation in Alzheimer’s disease.docx

BackgroundDue to the increasing prevalence of Alzheimer’s disease (AD) and the limited efficacy of pharmacological treatment, the interest in non-pharmacological interventions, e.g., cognitive stimulation therapy (CST), to improve cognitive dysfunction and the quality of life of AD patients are on a steady rise.ObjectivesHere, we examined the efficacy of a CST program specifically conceptualized for AD dementia patients and the neural mechanisms underlying cognitive or behavioral benefits of CST.MethodsUsing neuropsychological tests and MRI-based measurements of functional connectivity, we examined the (neuro-) psychological status and network changes at two time points: pre vs. post-stimulation (8 to 12 weeks) in the intervention group (n = 15) who received the CST versus a no-intervention control group (n = 15).ResultsAfter CST, we observed significant improvement in the Mini-Mental State Examination (MMSE), the Alzheimer’s Disease Assessment Scale, cognitive subsection (ADAS-cog), and the behavioral and psychological symptoms of dementia (BPSD) scores. These cognitive improvements were associated with an up-regulated functional connectivity between the left posterior hippocampus and the trunk of the left postcentral gyrus.ConclusionOur data indicate that CST seems to induce short-term global cognition and behavior improvements in mild to moderate AD dementia and enhances resting-state functional connectivity in learning- and memory-associated brain regions. These convergent results prove that even in mild to moderate dementia AD, neuroplasticity can be harnessed to alleviate cognitive impairment with CST.</p

Additional file 1: Figure S1. of Safety and in vivo immune assessment of escalating doses of oral laquinimod in patients with RRMS

Study MS-LAQ-101 flow chart. Figure S2. Average plasma concentrations of laquinimod on Day 21 after repeated daily administration. Figure S3. Exposure-dose plots of laquinimod after multiple dose administration. Table S1. Distribution of study drug termination reasons. Table S2. Biochemistry shift analysis to abnormal levels. Table S3. Hematology shift analysis. (DOCX 276 kb