Nanoskyrmion engineering with spsp-electron materials: Sn monolayer on SiC(0001) surface

Materials with $sp$-magnetism demonstrate strongly nonlocal Coulomb interactions, which opens a way to probe correlations in the regimes not achievable in transition metal compounds. By the example of Sn monolayer on SiC(0001) surface, we show that such systems exhibit unusual but intriguing magnetic properties at the nanoscale. Physically, this is attributed to the presence of a significant ferromagnetic coupling, the so-called direct exchange, which fully compensates ubiquitous antiferromagnetic interactions of the superexchange origin. Having a nonlocal nature, the direct exchange was previously ignored because it cannot be captured within the conventional density functional methods and significantly challenges ground state models earlier proposed for Sn/SiC(0001). Furthermore, heavy adatoms induce strong spin-orbit coupling, which leads to a highly anisotropic form of the spin Hamiltonian, in which the Dzyaloshinskii-Moriya interaction is dominant. The latter is suggested to be responsible for the formation of a nanoskyrmion state at realistic magnetic fields and temperatures.Comment: 4 pages, supplemental materia

Alkylation of isopropanol with ethanol over heterogeneous catalysts

The importance of synthesis of carbon-carbon bonds is reflected by the fact that Nobel Prizes in Chemistry have been given to this area: The Grignard reaction (1912), the Diels-Alder reaction (1950), the Witting reaction (1979), the olefin metathesis Y. Chauvin, R.H. Grubbs and R.R. Schrock (2005), the palladiumcatalyzed cross-coupling reactions to R. F. Heck, A. Suzuki, E. Negishi (2010). For the first time ever alkylation of isopropanol with ethanol was carried out over heterogeneous 0.2-1 wt.% Au and/or 0.02-0.3 wt. %Ni - containing catalysts without any sacrificial agents and/or presence of acidic/base additives. The catalyst containing 0.2 wt.% Au and 0.18 wt.% Ni supported on γ-Al2O3 was found to be the most selective in the cross-coupling route. Total selectivity of coupling products reached up to 70 %, conversion of the both initial alcohols was 50 %. Structural investigations of the Au, Ni - containing catalysts permitted to determine probable active sites peculiarities that provide effective one-pot alkylation of isopropanol with ethanol

Potassium Ions are More Effective than Sodium Ions in Salt Induced Peptide Formation

Prebiotic peptide formation under aqueous conditions in the presence of metal ions is one of the plausible triggers of the emergence of life. The salt-induced peptide formation reaction has been suggested as being prebiotically relevant and was examined for the formation of peptides in NaCl solutions. In previous work we have argued that the first protocell could have emerged in KCl solution. Using HPLC-MS/MS analysis, we found that K(+) is more than an order of magnitude more effective in the L-glutamic acid oligomerization with 1,1'-carbonyldiimidazole in aqueous solutions than the same concentration of Na(+), which is consistent with the diffusion theory calculations. We anticipate that prebiotic peptides could have formed with K(+) as the driving force, not Na(+), as commonly believed

Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films

The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range of 150–550 °C In2O3-Ga2O3 films are characterized by high responses, high speed of operation when exposed to H2, NH3, CO and O2. A qualitative mechanism of gas sensitivity for the In2O3-Ga2O3 mixed compounds films to gases was proposed. The gas-sensitive characteristics of In2O3, κ(ε)-Ga2O3 and In2O3-Ga2O3 films were compared. The advantage of the In2O3-Ga2O3 mixed compounds films compared with Ga2O3 and In2O3 films is a low base electrical resistivity with a relatively high gas sensitivity

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2O3 buffer layers resulted in phase-pure α-Ga2O3 films and a fourfold reduction of the dislocation density to 5∙109 cm-2