HUBUNGAN ANTARA KOMITMEN BERPACARAN DENGAN KUALITAS PERSAHABATAN PADA REMAJA AKHIR DI UNIVERSITAS PENDIDIKAN INDONESIA

Penelitian ini memiliki beberapa tujuan, yaitu untuk mengetahui (1) gambaran komitmen berpacaran, (2) gambaran kualitas persahabatan, (3) hubungan antara komitmen berpacaran dengan kualitas persahabatan pada remaja akhir di Universitas Pendidikan Indonesia (UPI). Responden pada penelitian ini ialah mahasiswa di UPI yang berada pada usia remaja akhir yang memiliki pasangan (pacar) dan juga teman dekat (sahabat). Terdapat 200 orang responden sesuai kriteria yang telah ditentukan dalam penelitian ini. Penelitian ini menggunakan metode kuantitatif dan menggunakan teknik purposive sampling. Pengumpulan data dilakukan melalui penyebaran kuesioner dengan memanfaatkan aplikasi google docs. Kuesioner berisikan skala komitmen berpacaran yang peneliti adaptasi dan modifikasi dari Commitment Measurenment milik Rusbult (1983) dan skala kualitas persahabatan yang juga peneliti adaptasi dan modifikasi dari Friendship Quality Scale (FQS) milik Bukowski, Hoza, dan Bovin (Ponti, dkk, 2010). Data yang diperoleh dianalisis menggunakan teknik korelasi Spearman Rho. Hasil penelitian menunjukkan (1) remaja akhir di UPI memiliki komitmen berpacaran yang cenderung rendah yaitu sebanyak 41% dari 200 orang responden, (2) remaja akhir di UPI memiliki kualitas persahabatan yang cenderung rendah yaitu sebanyak 36,5% dari 200 orang responden, dan (3) terdapat hubungan yang antara komitmen berpacaran dengan kualitas persahabatan pada remaja akhir di Universitas Pendidikan Indonesia.---------This study aims to describe (1) the image of commitment dating (2) the big picture of quality of friendship, and (3) relationship between Commitment Dating with the quality of friendship late adolescence at Indonesia University of Education (UPI). Responders of this study are late adolescence at Indonesia University of Education who are in commitment relationship and having close friends. There are around 200 people with the appropriate criteria have been determined in this study. This study uses quantitative methods and using purposive sampling technique. Data collected through questionnaires by using google docs app. The questionnaire contains of a commitment dating scale that is adapted by researcher and modification of Commitment Measurenment owned by Rusbult (1983) and so is Quality Scale (FQS) belongs to Bukowski, Hoza, and Bovin (Ponti et al, 2010). Data was analyzed by using Spearman Rho correlation techniques. The result showed that (1) late adolescence of UPI who are in committed relationship that tends to lower as many as 41% of the 200 respondents, (2) late adolescence of UPI have a rather low quality friendships as many as 36.5% of the 200 respondents, and (3) there is a relationship between commitment dating with the quality of friendship in late teens at UPI

First fabrication of full 3D-detectors at SINTEF

International audienceA knowledge of the mechanical properties of bacterial biofilms is required to more fully understand the processes of biofilm formation such as initial adhesion or detachment. The main contribution of this article is to demonstrate the use of homogenization techniques to compute mechanical parameters of Pseudomonas aeruginosa PAO1 biofilms. For this purpose, homogenization techniques are used to analyze freeze substitution electron micrographs of the biofilm cross-sections. The concept of a representative volume element and the study about his representativeness allows us to determine the optimal size in order to analyze these biofilm images. Results demonstrate significant heterogeneities with respect to stiffness and these can be explained by varying cell density distribution throughout the bacterial biofilms. These stiffness variations lead to different mechanical properties along the height of the biofilm. Moreover, a numerical shear stress test shows the impact of these heterogeneities on the detachment process. Several modes of detachment are highlighted according to the local strain energy in the different parts of the biofilm. Knowing where, and how, a biofilm may detach will allow better prediction of accumulation and biomass detachment

MEMS Sensor/IC Integration for Miniaturized TPMS (e-CUBES)

Sensor networks are researched in various automotive applications, in particular in tirepressure monitoring systems (TPMS) installed as autonomous sensor nodes. A tire-mounted TPMS should ideally weight less than 5 grams and have a volume less than 0.5 cm3. Typically, the miniature system must include a microelectromechanical system (MEMS) sensor, application specific integrated circuits (ASICs), power supply, a radio and an antenna. Ultra low power consumption is required for all the components because a 10-year lifetime is mostly targeted in the automotive industry. Presently, the battery is one of the largest components in most wireless sensor nodes and the TPMS is not an exception. A combination of a battery and an energy harvester are foreseen to be the only possible solution for a future TPMS unless a large shift in battery technology takes place.MEMS Sensor/IC Integration for Miniaturized TPMS (e-CUBES

Etching Burried Oxide at the Bottom of High Aspect Ratio Structures

Plasma based dry etching is a key process widely used in micro-fabrication today. In this article, we look at the challenges involved in the anisotropic etching of buried SiO2 layers at the bottom of high aspect ratio structures on SOI wafers. We present our etch results that show the limitations of using a process with radio frequency (RF) substrate bias. This is followed by results obtained with a newly developed dielectric etch process based on a pulsed low frequency (LF) bias which makes it possible to etch through even relatively thick buried oxide layers. Finally we present an application in which this newly developed process was used

Etching buried oxide at the bottom of high aspect ratio structures

Plasma based dry etching is a key process widely used in micro-fabrication today. In this article, we look at the challenges involved in the anisotropic etching of buried SiO2 layers at the bottom of high aspect ratio structures on SOI wa-fers. We present our etch results that show the limitations of using a process with radio frequency (RF) substrate bias. This is followed by results obtained with a newly developed dielectric etch process based on a pulsed low frequency (LF) bias which makes it possible to etch through even rela-tively thick buried oxide layers.  Finally we present an application in which this newly developed process was used.Etching buried oxide at the bottom of high aspect ratio structure

3D stacked MEMS and ICs in a miniaturized sensor node

Solutions for through silicon viasSolutions for interconnectsDemonstrator for e-CUBE

TSV development for miniaturized MEMS acceleration switch

Fragile micromachined MEMS structures are usually protected by bonding a capping wafer to the device wafer itself. As opposed to using lateral interconnects at the interface between the cap wafer and the device wafer, the use of vertical through silicon vias (TSVs) significantly simplifies the mounting of the components and it also results in the smallest footprint. This paper presents the concept chosen for fabricating a miniaturized MEMS acceleration switch with TSVs through the SOI (silicon on insulator) device wafer, as well as the experimental results of the TSV process development that was done for this particular application. Especially challenging was the development of an etching process that can etch the thick buried oxide of the SOI wafer through high aspect ratio trenches

TSV development for miniaturized MEMS acceleration switch

Fragile micromachined MEMS structures are usually protected by bonding a capping wafer to the device wafer itself. As opposed to using lateral interconnects at the interface between the cap wafer and the device wafer, the use of vertical through silicon vias (TSVs) significantly simplifies the mounting of the components and it also results in the smallest footprint. This paper presents the concept chosen for fabricating a miniaturized MEMS acceleration switch with TSVs through the SOI (silicon on insulator) device wafer, as well as the experimental results of the TSV process development that was done for this particular application. Especially challenging was the development of an etching process that can etch the thick buried oxide of the SOI wafer through high aspect ratio trenches