119 research outputs found
Direct Observationof DegenerateTwo-Photon Absorption and Its Saturation in WS2 and MoS2 Monolayer and Few-Layer Films
The optical nonlinearity of WS2, MoS2 monolayer and few-layer films was
investigated using the Z-scan technique with femtosecond pulses from the
visible to the near infrared. The dependence of nonlinear absorption of the WS2
and MoS2 films on layer number and excitation wavelength was studied
systematically. WS2 with 1~3 layers exhibits a giant two-photon absorption
(TPA) coefficient. Saturation of TPA for WS2 with 1~3 layers and MoS2 with
25~27 layers was observed. The giant nonlinearity of WS2 and MoS2 is attributed
to two dimensional confinement, a giant exciton effect and the band edge
resonance of TPA
Heterojunction Hybrid Devices from Vapor Phase Grown MoS
We investigate a vertically-stacked hybrid photodiode consisting of a thin
n-type molybdenum disulfide (MoS) layer transferred onto p-type silicon.
The fabrication is scalable as the MoS is grown by a controlled and
tunable vapor phase sulfurization process. The obtained large-scale p-n
heterojunction diodes exhibit notable photoconductivity which can be tuned by
modifying the thickness of the MoS layer. The diodes have a broad
spectral response due to direct and indirect band transitions of the nanoscale
MoS. Further, we observe a blue-shift of the spectral response into the
visible range. The results are a significant step towards scalable fabrication
of vertical devices from two-dimensional materials and constitute a new
paradigm for materials engineering.Comment: 23 pages with 4 figures. This article has been published in
Scientific Reports. (26 June 2014, doi:10.1038/srep05458
Isotropic conduction and negative photoconduction in ultrathin PtSe2 films
PtSe2 ultrathin films are used as the channel of back-gated field-effect transistors that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms the semiconducting nature of multilayer PtSe2, with p-type conduction, a hole field-effect mobility up to 40 cm2 V−1 s−1, and significant gate modulation. Electrical conduction measured along different directions shows isotropic transport. A reduction of PtSe2 channel conductance is observed under exposure to light. Such a negative photoconductivity is explained by a photogating effect caused by photo-charge accumulation in SiO2 and at the Si/SiO2 interface
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