104 research outputs found
Heterojunction Hybrid Devices from Vapor Phase Grown MoS
We investigate a vertically-stacked hybrid photodiode consisting of a thin
n-type molybdenum disulfide (MoS) layer transferred onto p-type silicon.
The fabrication is scalable as the MoS is grown by a controlled and
tunable vapor phase sulfurization process. The obtained large-scale p-n
heterojunction diodes exhibit notable photoconductivity which can be tuned by
modifying the thickness of the MoS layer. The diodes have a broad
spectral response due to direct and indirect band transitions of the nanoscale
MoS. Further, we observe a blue-shift of the spectral response into the
visible range. The results are a significant step towards scalable fabrication
of vertical devices from two-dimensional materials and constitute a new
paradigm for materials engineering.Comment: 23 pages with 4 figures. This article has been published in
Scientific Reports. (26 June 2014, doi:10.1038/srep05458
Isotropic conduction and negative photoconduction in ultrathin PtSe2 films
PtSe2 ultrathin films are used as the channel of back-gated field-effect transistors that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms the semiconducting nature of multilayer PtSe2, with p-type conduction, a hole field-effect mobility up to 40 cm2 V−1 s−1, and significant gate modulation. Electrical conduction measured along different directions shows isotropic transport. A reduction of PtSe2 channel conductance is observed under exposure to light. Such a negative photoconductivity is explained by a photogating effect caused by photo-charge accumulation in SiO2 and at the Si/SiO2 interface
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