Excitation properties of the divacancy in 4H-SiC

We investigate the quenching of the photoluminescence (PL) from the divacancy defect in 4H-SiC consisting of a nearest-neighbour silicon and carbon vacancies. The quenching occurs only when the PL is excited below certain photon energies (thresholds), which differ for the four different inequivalent divacancy configurations in 4H-SiC. Refined theoretical ab initio calculation for the charge-transfer levels of the divacancy show very good agreement between the position of the (0/-) level with respect to the conduction band for each divacancy configurations and the corresponding experimentally observed threshold, allowing us to associate the PL decay with conversion of the divacancy from neutral to negative charge state due to capture of electrons photoionized from other defects (traps) by the excitation. Electron paramagnetic resonance measurements are conducted in dark and under excitation similar to that used in the PL experiments and shed light on the possible origin of traps in the different samples. A simple model built on this concept agrees well with the experimentally-observed decay curves.Comment: 28 pages, 6 figure

Approximating User Distributions in WCDMA Networks Using 2-D Gaussian

This paper discusses approximating user distributions in WCDMA networks using 2-D Gaussian

Capacity Allocations in Multi-cell UMTS Networks for Different Spreading Factors with Perfect and Imperfect Power Control

This paper discusses capacity allocation in multi-cell UMTS networks

UMTS Capacity and Throughput Maximization for Different Spreading Factors

This article discusses UMTS capacity and throughput maximization for different spreading factors

Capacity Allocations in Multi-cell UMTS Networks for Different Spreading Factors with Perfect and Imperfect Power Control [Presentation]

This presentation discusses user and interference models, wideband code division multiple access (WCDMA) capacity with perfect and imperfect power control, and spreading factors with numerical results

Protein Secondary Structure Prediction using an Optimised Bayesian Classification Neural Network

The prediction of protein secondary structure is a topic that has been tackled by many researchers in the field of bioinformatics. In previous work, this problem has been solved by various methods including the use of traditional classification neural networks with the standard error back-propagation training algorithm. Since the traditional neural network may have a poor generalisation, the Bayesian technique has been used to improve the generalisation and the robustness of these networks. This paper describes the use of optimised classification Bayesian neural networks for the prediction of protein secondary structure. The well-known RS126 dataset was used for network training and testing. The experimental results show that the optimised classification Bayesian neural network can reach an accuracy greater than 75%

A randomized controlled trial of a pharmacist-led intervention to enhance knowledge of Vietnamese patients with type 2 diabetes mellitus

OBJECTIVES: We aimed to assess whether a pharmacist-led intervention enhances knowledge, medication adherence and glycemic control in patients with type 2 diabetes mellitus (T2DM). METHODS: We conducted a single-blinded randomized controlled trial in Vietnam. Individuals with T2DM were recruited from a general hospital and randomly allocated to intervention and routine care. The intervention group received routine care plus counselling intervention by a pharmacist, including providing drug information and answering individual patients' queries relating to T2DM and medications, which had not been done in routine care. We assessed the outcomes: knowledge score as measured by the Diabetes Knowledge Questionnaire, self-reported adherence and fasting blood glucose (FBG) at the 1-month follow-up. KEY FINDINGS: A total of 165 patients (83 intervention, 82 control) completed the study; their mean age was 63.33 years, and 49.1% were males. The baseline characteristics of the patients were similar between the groups. At 1-month follow-up, the pharmacist's intervention resulted in an improvement in all three outcomes: knowledge score [B = 5.527; 95% confidence intervals (CI): 3.982 to 7.072; P < 0.001], adherence [odds ratio (OR) = 9.813; 95% CI: 2.456 to 39.205; P = 0.001] and attainment of target FBG (OR = 1.979; 95% CI: 1.029 to 3.806; P = 0.041). CONCLUSIONS: The pharmacist-led intervention enhanced disease knowledge, medication adherence and glycemic control in patients with T2DM. This study provides evidence of the benefits of pharmacist counselling in addition to routine care for T2DM outpatients in a Vietnam population

Effects of Interference on Capacity in Multi-Cell CDMA Networks

This article discusses the effects of interference on capacity in multi-cell CDMA networks

Combined electrical transport and capacitance spectroscopy of a MoS2−LiNbO3{\mathrm{MoS_2-LiNbO_3}} field effect transistor

We have measured both the current-voltage ($I_\mathrm{SD}$-$V_\mathrm{GS}$) and capacitance-voltage ($C$-$V_\mathrm{GS}$) characteristics of a $\mathrm{MoS_2-LiNbO_3}$ field effect transistor. From the measured capacitance we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured $I_\mathrm{SD}$-$V_\mathrm{GS}$ characteristics over the \emph{entire range} of $V_\mathrm{GS}$. Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.Comment: to appear in Applied Physics Letter

Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC

In this study, we address the selection rules with respect to the polarization of the optical excitation of two colour centres in 4H-SiC and 6H-SiC with potential for applications in quantum technology, the divacancy and the nitrogen-vacancy pair. We show that the photoluminescence (PL) of the axial configurations of higher symmetry (C3v) than the basal ones (C1h) can be cancelled using any excitation (resonant or non-resonant) with polarization parallel to the crystal axis (EL||c). The polarization selection rules are determined using group-theoretical analysis and simple physical arguments showing that phonon-assisted absorption with EL||c is prohibited despite being formally allowed by group theory. A comparison with the selection rules for the silicon vacancy, another defect with C3v symmetry, is also carried out. Using the selection rules, we demonstrate selective excitation of only one basal divacancy configuration in 4H-SiC, the P3 line and discuss the higher contrast and increased Debye-Waller factor in the selectively excited spectrum